NXP DATE CODE MARKING Search Results

Contextual Info: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D088 PMBD353 Schottky barrier double diode Product data sheet Supersedes data of 1999 May 25 2001 Oct 15 NXP Semiconductors Product data sheet Schottky barrier double diode FEATURES PMBD353 PINNING MARKING • Low forward voltage

PMBD353

Abstract: NXP PMBD353
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD353 Schottky barrier double diode Product data sheet Supersedes data of 1999 May 25 2001 Oct 15 NXP Semiconductors Product data sheet Schottky barrier double diode FEATURES PMBD353 MARKING • Low forward voltage

NXP BAV199 date code

Abstract: BAV199 NXP marking code diode smd marking jy smd code marking WV BAV199
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV199 Low-leakage double diode Product data sheet Supersedes data of 1999 May 11 2001 Oct 12 NXP Semiconductors Product data sheet Low-leakage double diode FEATURES BAV199 MARKING • Plastic SMD package

BAV199

Contextual Info: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D088 BAV199 Low-leakage double diode Product data sheet Supersedes data of 1999 May 11 2001 Oct 12 NXP Semiconductors Product data sheet Low-leakage double diode FEATURES BAV199 PINNING MARKING • Plastic SMD package

NXP date code marking

Abstract: marking 1B marking code v6 SOT23 NXP MARKING SMD IC CODE PMBT2222 SOT23 NXP power dissipation TO-236AB MARKING CODE SMD IC PMBT2222A,215 smd code marking .1p PMBT2222A
Contextual Info: PMBT2222; PMBT2222A NPN switching transistors Rev. 6 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description NPN switching transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. Table 1. Product overview

TRANSISTOR SMD MARKING CODE LF

Abstract: NXP TRANSISTOR SMD MARKING CODE SOT23 bsr14 nxp transistors Standard Marking TRANSISTOR SMD letter CODE PACKAGE SOT23 smd marking NXP date code marking BSR14 SOT23 semiconductors replacement guide LF marking code smd transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSR13; BSR14 NPN switching transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 13 NXP Semiconductors Product data sheet NPN switching transistors BSR13; BSR14 FEATURES PINNING • High current max. 800 mA

TRANSISTOR SMD MARKING CODE LF

Abstract: smd transistor marking A2 NXP SMD TRANSISTOR MARKING CODE NXP date code marking SMD TRANSISTOR MARKING CODE YR marking code DG SMD Transistor TRANSISTOR SMD npn MARKING CODE YR transistor marking DG NXP TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1
Contextual Info: 2PA1774 PNP general-purpose transistor Rev. 05 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP transistor in a SOT416 SC-75 plastic package. The NPN complement is 2PC4617. 1.2 Features „ Low current (max. 150 mA) „ Low voltage (max. 50 V)

Contextual Info: ES_LPC2470_78 Errata sheet LPC2470/78 Rev. 8.1 — 1 July 2012 Errata sheet Document information Info Content Keywords LPC2470FBD208; LPC2470FET208; LPC2478FBD208; LPC2478FET208, LPC2470/78 errata Abstract This errata sheet describes both the known functional problems and any

LPC2387

Abstract: C104 C144
Contextual Info: ES_LPC2387 Errata sheet LPC2387 Rev. 6 — 1 March 2011 Errata sheet Document information Info Content Keywords LPC2387 errata Abstract This errata sheet describes both the known functional problems and any deviations from the electrical specifications known at the release date of

NXP date code marking

Contextual Info: 006 D-2 BAP50LX DF N1 Silicon PIN diode Rev. 2 — 7 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits  Low diode capacitance  Low diode forward resistance

Contextual Info: ES_LPC11Axx Errata sheet LPC11Axx Rev. 2 — 15 January 2013 Errata sheet Document information Info Content Keywords LPC11A02UK; LPC11A04UK; LPC11A11FHN33; LPC11A12FHN33; LPC11A12FBD48; LPC11A13FHI33; LPC11A14FHN33; LPC11A14FBD48 LPC11Axx errata Abstract This errata sheet describes both the known functional problems and any

lpc1751

Contextual Info: ES_LPC1751 Errata sheet LPC1751 Rev. 10 — 8 February 2011 Errata sheet Document information Info Content Keywords LPC1751 errata Abstract This errata sheet describes both the known functional problems and any deviations from the electrical specifications known at the release date of

Contextual Info: DF N1 10B -6 BC857QAS 45 V, 100 mA PNP/PNP general-purpose transistor 25 July 2014 Product data sheet 1. General description PNP/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: BC847QAS.

Contextual Info: DF N1 10B -6 BC847QAS 45 V, 100 mA NPN/NPN general-purpose transistor 29 July 2014 Product data sheet 1. General description NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC857QAS.

diode NXP marking code N1

Contextual Info: 006 D-2 BB174LX DF N1 VHF variable capacitance diode Rev. 1 — 26 March 2013 Product data sheet 1. Product profile 1.1 General description The BB174LX is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD882D DFN1006D-2 ultra small leadless SMD plastic package.

nxp marking code

Abstract: nxp marking d1 NXP date code marking
Contextual Info: INTEGRATED CIRCUITS ERRATA SHEET Date: Document Release: Device Affected: 2009 August 11 Version 1.1 LPC2888/D1 This errata sheet describes both the functional problems and any deviations from the electrical specifications known at the release date of this document.

v08 smd marking code

Abstract: NXP date code marking nxp Standard Marking SOT1202 SOT1115 marking nxp package 74LVC1G08GW
Contextual Info: 74LVC1G08 Single 2-input AND gate Rev. 8 — 19 October 2010 Product Specification 1. General description The 74LVC1G08 provides one 2-input AND function. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V applications.

NXP SMD ic MARKING CODE

Abstract: smd code marking ft sot23 marking 41 sot23 nxp
Contextual Info: 83B 2PA1774xMB series SO T8 40 V, 100 mA PNP general-purpose transistors Rev. 1 — 23 March 2012 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.

Contextual Info: 83B 2PA1774xMB series SO T8 40 V, 100 mA PNP general-purpose transistors Rev. 1 — 23 March 2012 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.

Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

NXP date code marking

Abstract: a/NXP date code marking
Contextual Info: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 4 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

NXP date code marking

Abstract: nxp marking code LPC2888 MARKING CODE NXP
Contextual Info: INTEGRATED CIRCUITS ERRATA SHEET Date: Document Release: Device Affected: 2009 August 11 Version 1.1 LPC2888/01 This errata sheet describes both the functional problems and any deviations from the electrical specifications known at the release date of this document.

Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench