NVJS4151P Search Results
NVJS4151P Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| NVJS4151PT1G |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 20V 3.2A SC88 | Original | 118.72KB |
NVJS4151P Price and Stock
onsemi NVJS4151PT1GSingle P-Channel Trench Power MOSFET -20V -4.1A 67mO - Tape and Reel (Alt: NVJS4151PT1G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NVJS4151PT1G | Tape & Reel | 35 Weeks | 6,000 |
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NVJS4151PT1G | Tape & Reel | 3,000 |
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Buy Now | ||||||
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NVJS4151PT1G | 1 |
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NVJS4151PT1G | 46 Weeks | 6,000 |
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NVJS4151PT1G | 25 Weeks | 3,000 |
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NVJS4151P Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: NVJS4151P Trench Power MOSFET −20 V, −4.3 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board http://onsemi.com Utilization, Same as SC−70−6 |
Original |
nvjs4151pnvjs4151p/d | |
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Contextual Info: NVJS4151P Trench Power MOSFET −20 V, −4.1 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board • • • Utilization, Same as SC−70−6 |
Original |
nvjs4151pnvjs4151p/d | |
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Contextual Info: NTJS4151P, NVJS4151P Trench Power MOSFET −20 V, −4.2 A, Single P−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board • • • Utilization, Same as SC−70−6 |
Original |
ntjs4151pnvjs4151pntjfs4151p/d |