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    NTTFS4930NTAG Search Results

    NTTFS4930NTAG Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NTTFS4930NTAG
    On Semiconductor NTTFS4930 - TRANSISTOR 7.2 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, 3.30 X 3.30 MM, HALOGEN FREE AND ROHS COMPLIANT, CASE 511AB-01, U8FL, WDFN-8, FET General Purpose Power Original PDF 124.15KB 7
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    NTTFS4930NTAG Price and Stock

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    onsemi NTTFS4930NTAG

    MOSFET N-CH 30V 4.5A/23A 8WDFN
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    DigiKey () NTTFS4930NTAG Cut Tape 51 1
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    Verical () NTTFS4930NTAG 115,000 1,271
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    NTTFS4930NTAG 85,500 1,271
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    NTTFS4930NTAG 84,000 1,271
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    NTTFS4930NTAG 25,500 1,271
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    NTTFS4930NTAG 1,500 1,271
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    Quest Components NTTFS4930NTAG 1,357
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    Rochester Electronics NTTFS4930NTAG 311,500 1
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    Chip 1 Exchange NTTFS4930NTAG 5,326
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    Rochester Electronics LLC NTTFS4930NTAG

    POWER FIELD-EFFECT TRANSISTOR, 7
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    DigiKey NTTFS4930NTAG Bulk 1,014
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    Fairchild Semiconductor Corporation NTTFS4930NTAG

    Power Field-Effect Transistor, 7.2A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    Rochester Electronics NTTFS4930NTAG 4,500 1
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    NTTFS4930NTAG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: NTTFS4930N Power MOSFET 30 V, 23 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original
    NTTFS4930N NTTFS4930N/D PDF

    Contextual Info: NTTFS4930N Product Preview Power MOSFET 30 V, 23 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original
    NTTFS4930N NTTFS4930N/D PDF

    Contextual Info: NTTFS4930N Power MOSFET 30 V, 23 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original
    NTTFS4930N NTTFS4930N/D PDF

    NTTFS4930N

    Abstract: NTTFS4930NTAG NTTFS4930NTWG nttfs4930
    Contextual Info: NTTFS4930N Product Preview Power MOSFET 30 V, 23 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original
    NTTFS4930N NTTFS4930N/D NTTFS4930N NTTFS4930NTAG NTTFS4930NTWG nttfs4930 PDF

    Contextual Info: NTTFS4930N Power MOSFET 30 V, 23 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original
    NTTFS4930N NTTFS4930N/D PDF

    Contextual Info: NTTFS4930N Power MOSFET 30 V, 23 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original
    NTTFS4930N NTTFS4930N/D PDF