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    NTMFS4C06NT1G Search Results

    NTMFS4C06NT1G Datasheets (2)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NTMFS4C06NT1G
    		On Semiconductor NTMFS4C06 - TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal Original PDF 129.98KB 7
    NTMFS4C06NT1G-001
    		ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 11A SO8FL Original PDF 92.58KB
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    NTMFS4C06NT1G Price and Stock

    onsemi

    onsemi NTMFS4C06NT1G

    MOSFET N-CH 30V 11A/69A 5DFN
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    Mouser Electronics NTMFS4C06NT1G 67,552
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    onsemi NTMFS4C06NT1G-001

    MOSFET N-CH 30V 11A/69A 5DFN
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    NTMFS4C06NT1G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    4C06N

    Abstract: NTMFS4C06N
    Contextual Info: NTMFS4C06N Power MOSFET 30 V, 69 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		NTMFS4C06N NTMFS4C06N/D 4C06N NTMFS4C06N PDF

    NTMFS4C06NT1G

    Abstract: 4C06N
    Contextual Info: NTMFS4C06N Power MOSFET 30 V, 69 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free and are RoHS Compliant


    Original     		NTMFS4C06N NTMFS4C06N/D NTMFS4C06NT1G 4C06N PDF

    Contextual Info: NTMFS4C06N Power MOSFET 30 V, 69 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free and are RoHS Compliant


    Original     		NTMFS4C06N NTMFS4C06N/D PDF

    Contextual Info: NTMFS4C06N Power MOSFET 30 V, 69 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free and are RoHS Compliant


    Original     		NTMFS4C06N NTMFS4C06N/D PDF

    Contextual Info: NTMFS4C06N Power MOSFET 30 V, 69 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free and are RoHS Compliant


    Original     		NTMFS4C06N NTMFS4C06N/D PDF

    4C06N

    Abstract: NTMFS4C06NT1G NTMFS4C06N
    Contextual Info: NTMFS4C06N Power MOSFET 30 V, 69 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free and are RoHS Compliant


    Original     		NTMFS4C06N NTMFS4C06N/D 4C06N NTMFS4C06NT1G PDF