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NTE357 Datasheets (1)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NTE357		NTE Electronics	Silicon NPN Transistor RF Power Output PO = 7W @ 175MHz	Original	PDF	71.48KB	2

NTE357 Datasheets Context Search

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nte357 Abstract: 7w RF POWER TRANSISTOR NPN transistor 828 Contextual Info: NTE357 Silicon NPN Transistor RF Power Output PO = 7W @ 175MHz Description: The NTE357 RF power transistor is designed primarily for wideband large−signal amplifier stages in the 125−175MHz frequency range. Features: D Specified 28V, 175MHz Characteristics −	Original	NTE357 175MHz NTE357 125-175MHz 175MHz 30Vdc, 100mAdc, 28Vdc, 7w RF POWER TRANSISTOR NPN transistor 828	PDF

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nte357

Abstract: 7w RF POWER TRANSISTOR NPN transistor 828
Contextual Info: NTE357 Silicon NPN Transistor RF Power Output PO = 7W @ 175MHz Description: The NTE357 RF power transistor is designed primarily for wideband large−signal amplifier stages in the 125−175MHz frequency range. Features: D Specified 28V, 175MHz Characteristics −

Original

NTE357 175MHz NTE357 125-175MHz 175MHz 30Vdc, 100mAdc, 28Vdc, 7w RF POWER TRANSISTOR NPN transistor 828

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