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    NTE2998 Search Results

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    NTE2906

    Abstract: NTE2998 NTE290
    Contextual Info: NTE2906 MOSFET N−Channel, Enhancement Mode High Speed Switch Compl to NTE2998 D Features: D High Speed Switching D High Voltage D High Energy Rating D Enhancement Mode D Integral Protection Diode G S Absolute Maximum Ratings: (TC = +25C unless otherwise specified)


    Original     		NTE2906 NTE2998) NTE2906 NTE2998 NTE290 PDF

    NTE2998

    Abstract: p-channel 200V
    Contextual Info: NTE2998 MOSFET P−Channel, Enhancement Mode High Speed Switch D Features: D High Speed Switching D High Voltage D High Energy Rating D Enhancement Mode D Integral Protection Diode G S Absolute Maximum Ratings: TC = +25°C unless otherwise specified Drain−Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		NTE2998 NTE2998 p-channel 200V PDF

    NTE2998

    Abstract: NTE2906 p-channel 200V NTE299
    Contextual Info: NTE2998 MOSFET P−Channel, Enhancement Mode High Speed Switch Compl to NTE2906 D Features: D High Speed Switching D High Voltage D High Energy Rating D Enhancement Mode D Integral Protection Diode G S Absolute Maximum Ratings: (TC = +25C unless otherwise specified)


    Original     		NTE2998 NTE2906) NTE2998 NTE2906 p-channel 200V NTE299 PDF