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Catalog Datasheet	Type	Document Tags	PDF
NTE2903 Abstract: NTE290 Contextual Info: NTE2903 MOSFET N-Ch, Enhancement Mode High Speed Switch Features: D Low Drain-Source ON Resistance: RDS ON = 1.35Ω Typ D High Forward Transfer Admittance: \|yfs\| = 3.5S Typ D Low Leakage Current: IDSS = 100 A (VDS = 500V) D Enhancement Mode: Vth = 2.0 to 4.0V (VDS = 10V, ID = 1mA)	Original	NTE2903 00A/s NTE2903 NTE290	PDF

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NTE2903

Abstract: NTE290
Contextual Info: NTE2903 MOSFET N-Ch, Enhancement Mode High Speed Switch Features: D Low Drain-Source ON Resistance: RDS ON = 1.35Ω Typ D High Forward Transfer Admittance: |yfs| = 3.5S Typ D Low Leakage Current: IDSS = 100 A (VDS = 500V) D Enhancement Mode: Vth = 2.0 to 4.0V (VDS = 10V, ID = 1mA)

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NTE2903 00A/s NTE2903 NTE290

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