NTE242 Search Results

NTE2428

Abstract: NTE2429
Contextual Info: NTE2428 NPN & NTE2429 (PNP) Silicon Complementary Transistors General Purpose Switch Description: The NTE2428 and NTE2429 are silicon complementary transistors in a SOT–89 type surface mount package designed for use in thick and thin film circuits. Typical applications include telephone and

darlington npn 90v

Contextual Info: NTE2426 NPN & NTE2427 (PNP) Silicon Complementary Transistors Darlington Switch Description: The NTE2426 and NTE2427 are silicon planer Darlington transistors in a SOT–89 type surface mount package designed for use in industrial switching applications such as print hammer, solenoid, relay,

NTE241

Contextual Info: NTE241 NPN & NTE242 (PNP) Silicon Complementary Transistors Audio Power Amplifier, Switch Description: The NTE241 (NPN) and NTE242 (PNP) are silicon complementary transistors in a TO220 type package designed for use in power amplifier and switching circuits.

nte160

Contextual Info: BI-POL AR TRANSISTORS Typical Forward Current Gain Maximum Collector Power Dissipation Watts Case Style Diag. No. Maximum Collector Current (Amps) >C BVCbo BVceo BVebo hre Pd »T Darlington Switch (Compì to NTE2427) SOT-89 555a 0.5 90 80 (CER) 5 2000 Min

Contextual Info: NTE2426 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)90 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.2.0k h(FE) Max. Current gain.

NTE130

Abstract: 27mhz rf amplifier NTE197 NTE199 NTE241 16 amp npn darlington power transistors t03 27mhz rf ic NTE196 NTE210 NTE211
Contextual Info: BI-POLAR TRANSISTORS Maximum Collector Power Dissipation Watts BV ebo " fe Pd *T 4 30 Min 8 150 80 (CER) 5 20 Min 50* 1.8 4 80 (CER) 5 20 Min 50* 4 Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) 'c 1.5 BVcbo BVceo 70 70 (CER)

NTE130

Abstract: NTE199 NPN RF Amplifier NTE241
Contextual Info: BI-POLAR TRANSISTORS Olag. No. •c 0VCBO BVceo BV ebo hFE Pd •t RF Pwr Amp/Driver, CB P0 = 3.5W Min, 27MHz, 12.5V T 039 21a 1.5 70 70 (CEFt) 4 30 Min 8 150 NPN-Si Audio Power Output & Medium Power Switching (Compì to NTE 197) T0220 11 a 7 90 80 (CER)

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components