NTE241 Search Results

NTE2416

Abstract: NTE241
Contextual Info: NTE2416 NPN & NTE2417 (PNP) Silicon Complementary Transistors Digital w/2 Built–In Bias 22k Resistors (Surface Mount) Features: D Built–In Bias Resistors D Small SOT–23 Surface Mount Package Applications: D Switching Circuits D Inverters D Interface Circuits

Contextual Info: NTE2418 NPN & NTE2419 (PNP) Silicon Complementary Transistors Digital w/2 Built–In Bias 47k Resistors (Surface Mount) Features: D Built–In Bias Resistors D Small SOT–23 Surface Mount Package Applications: D Switching Circuits D Inverters D Interface Circuits

"PNP Transistor"

Abstract: NTE241
Contextual Info: NTE2413 Silicon PNP Transistor General Purpose, High Voltage Amp, Compl to NTE2412 Description: The NTE2413 is a silicon PNP transistor in an SOT–23 type surface mount package designed for use primarily in telephone and professional communication equipment.

NTE241

Contextual Info: NTE2412 Silicon NPN Transistor General Purpose, High Voltage Amp, Compl to NTE2413 Description: The NTE2412 is a silicon NPN transistor in an SOT–23 type surface mount package designed for use primarily in telephone and professional communication equipment.

NTE2414

Abstract: NTE241
Contextual Info: NTE2414 NPN & NTE2415 (PNP) Silicon Complementary Transistors Digital w/2 Built–In Bias 10k Resistors (Surface Mount) Features: D Built–In Bias Resistors D Small SOT–23 Surface Mount Package Applications: D Switching Circuits D Inverters D Interface Circuits

NTE2411

Abstract: NTE241
Contextual Info: NTE2411 Silicon PNP Transistor High Voltage Amp/Driver Compl to NTE2410 Description: The NTE2411 is a silicon PNP transistor in an SOT–23 type surface mount case designed for use in high voltage applications. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V

NTE241

Contextual Info: NTE241 NPN & NTE242 (PNP) Silicon Complementary Transistors Audio Power Amplifier, Switch Description: The NTE241 (NPN) and NTE242 (PNP) are silicon complementary transistors in a TO220 type package designed for use in power amplifier and switching circuits.

NTE2418

Abstract: NTE2419
Contextual Info: NTE2418 NPN & NTE2419 (PNP) Silicon Complementary Transistors Digital w/2 Built−In Bias 47k Resistors (Surface Mount) Features: D Built−In Bias Resistors D Small SOT−23 Surface Mount Package Applications: D Switching Circuits D Inverters D Interface Circuits

NTE2410

Abstract: NTE2411 NTE241
Contextual Info: NTE2410 Silicon NPN Transistor High Voltage Amp/Driver Comp to NTE2411 Description: The NTE2410 is a silicon NPN transistor in an SOT–23 type surface mount case designed for use in high voltage applications. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V

NTE130

Abstract: 27mhz rf amplifier NTE197 NTE199 NTE241 16 amp npn darlington power transistors t03 27mhz rf ic NTE196 NTE210 NTE211
Contextual Info: BI-POLAR TRANSISTORS Maximum Collector Power Dissipation Watts BV ebo " fe Pd *T 4 30 Min 8 150 80 (CER) 5 20 Min 50* 1.8 4 80 (CER) 5 20 Min 50* 4 Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) 'c 1.5 BVcbo BVceo 70 70 (CER)

NTE130

Abstract: NTE199 NPN RF Amplifier NTE241
Contextual Info: BI-POLAR TRANSISTORS Olag. No. •c 0VCBO BVceo BV ebo hFE Pd •t RF Pwr Amp/Driver, CB P0 = 3.5W Min, 27MHz, 12.5V T 039 21a 1.5 70 70 (CEFt) 4 30 Min 8 150 NPN-Si Audio Power Output & Medium Power Switching (Compì to NTE 197) T0220 11 a 7 90 80 (CER)

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

Contextual Info: BI-POLAR TRANSISTORS Description and Application NTE TVpe Number Polarity and Material 2363 NPN-Si High 2364 PNP-Si High Current Gen Purp Amp/Sw Compì to NTE2363 2365 NPN-Si High Vltg, Horiz Defl Output, Sw, tf = 0.2|is 2367 NPN-Si 2368 Case Style Diag.