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    NTE2386 Search Results

    NTE2386 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NTE2386
    		NTE Electronics MOSFET N-Channel Enhancemen Mode, High Speed Switch Original PDF 27.72KB 3
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    NTE2386 Price and Stock

    NTE Electronics Inc

    NTE Electronics Inc NTE2386

    POWER FIELD-EFFECT TRANSISTOR, 6.2A I(D), 600V, 1.2OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components NTE2386 1
    • 1 $70.81
    • 10 $70.81
    • 100 $70.81
    • 1000 $70.81
    • 10000 $70.81
    		Buy Now

    NTE2386 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    N-Channel Enhancemen-Mode MOSFET

    Abstract: NTE2386
    Contextual Info: NTE2386 MOSFET N–Channel Enhancemen Mode, High Speed Switch Description: The NTE2386 Power MOSFET features advantages such as voltage control, very fast switching, ease of paralleling and temperature stability, and is suited for applications such as switching power


    Original     		NTE2386 NTE2386 N-Channel Enhancemen-Mode MOSFET PDF

    Contextual Info: NTE2386 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)20 I(D) Max. (A)6 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)


    Original     		NTE2386 PDF