NTE21256 Search Results
NTE21256 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| NTE21256 |
|
262,144-Bit Dynamic Random Access Memory (DRAM) | Original | 42.64KB | 6 | ||
| NTE21256 |
|
Microprocessor and Memory IC Pinouts | Scan | 29.41KB | 1 |
NTE21256 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: NTE21256 262,144–Bit Dynamic Random Access Memory DRAM Description: The NTE21256 is a 262,144 word by 1–bit dynamic Random Access Memory. This 5V–only component is fabricated with N–channel silicon gate technology. Nine multiplexed address inputs permit the NTE21256 to be packaged in an industry standard |
Original |
NTE21256 NTE21256 Note21. | |
NTE65101
Abstract: NTE21128 NTE21256 NTE8255 GJA9
|
OCR Scan |
NTE8255 40-Lead NTE21128 28-Lead 250ns NTE21256 16-Lead 150ns NTE65101 22-Lead GJA9 | |
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Contextual Info: t* MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE8255 40-Lead DI P, See Diag. 299 NMOS, Programmable Preipheral Interface PA3 I PA2 f PA1 § PAO 1 RO| C 5| 1 I 1 Q PC6 0 PC5 n PC4 Q pco Q pci Q PC2 Q PC3 g PBO Bo GND Al A0 PC7 PB1 r a PB2 NTE21128 |
OCR Scan |
NTE8255 40-Lead NTE21128 26-Lead 250ns NTE21256 16-Lead 150ns NTE65101 22-Lead |