NSFY140 Search Results

NSFY140

Contextual Info: NSFY140 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R d s o n • LOW DRIVE REQUIREMENT • DYNAMIC dv/dt RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) SYMBOL PARAMETERS / TEST CONDITIONS Drain-Source Voltage V ds

Contextual Info: Back to FETs NSFY140 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R d s o n • LOW DRIVE REQUIREMENT • DYNAMIC dv/dt RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) SYMBOL PARAMETERS / TEST CONDITIONS Drain-Source Voltage

NSFY30509

Abstract: NSFY30613 NSFY30616 NSFY30724 NSFY30728 NSFY30824 NSFY30828 NSFY30940 NSFY30942 NSFY31040
Contextual Info: N EW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-257 ^ D S o n PACKAGE TO-257 Also available in Z Pack • • • DEVICE TYPE BVdss VOLTS Id @0.5 ID Qg AMPS OHMS nc Ciss Pf Pd WATTS NSFY31042 1000 3.0 4.2 55 950 100 NSFY31040 1000 3.3 4.0 55 950 100

Contextual Info: NEW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-257 PACKAGE DEVICE TYPE ^DS<on BV dss VOLTS Id AMPS @0.5 ID OHMS Qg nc Qss pf Pd WATTS NSFY31042 1000 3.0 4.2 55 950 100 NSFY31040 1000 3.3 4.0 55 950 100 NSFY30942 900 3.0 4.2 55 950 100 NSFY30940 900

CP666

Abstract: CP640 TO-213AA CP664
Contextual Info: FETS Page 1 of 7 Next Home Package Device Type BVDSS Volts RDS on @ 0.5 ID Ohms ID Continuous Amps IDM Pulse Drain Current Amps TO-5 NES130/5 100 0.18 8 32 25 TO-5 NES230/5 200 0.40 5.5 22 25 TO-213AA/66 NSFJ1000 1000 4.2 3.0 10 70 TO-213AA/66 NSFJ120 100

Contextual Info: NEW ENGLAND SEMICONDUCTOR PO W E R M OSFETS N CHANNEL TO-25" R d S oii PACKAGE TO-257 Also available in Z Pack • • • DEVICE TYPE Qg nc Q ss Pd AMPS @0.5 ID OHM S Pf WATTS 1000 3.0 4.2 55 950 100 NSFY31040 1000 3.3 4.0 55 950 100 NSFY30942 900 3.0 4.2

NSFY30509

Abstract: NSFY30613 NSFY30616 NSFY30724 NSFY30728 NSFY30824 NSFY30828 NSFY30940 NSFY30942 NSFY31040
Contextual Info: N EW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-257 PACKAGE TO-257 Also available in Z Pack • • • BV dss VOLTS Id AMPS ^DS{on @0.5 ID OHMS Qg NSFY31042 1000 3.0 4.2 NSFY31040 1000 3.3 NSFY30942 900 NSFY30940 DEVICE TYPE Qss Pf Pd WATTS 55 950

Contextual Info: N EW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-257 ^ D S o n PACKAGE TO-257 Also available in Z Pack • • • DEVICE TYPE BVdss VOLTS Id @0.5 ID Qg AMPS OHMS nc Ciss Pf Pd WATTS NSFY31042 1000 3.0 4.2 55 950 100 NSFY31040 1000 3.3 4.0 55 950 100