NSF40604 Search Results

NSF40604

Contextual Info: NSF40604 TO-258 POWER MOSFET N CHANNEL o 600 VOLTS 20.0 AMPS • REPETITIVE AVALANCHE RATINGS • LOW Rds on • LOW DRIVE REQUIREM ENT • DYNAM IC d v / d t RATING 1 2 3 0.4 A 1 Drain 2 Source 3 Gate A BSO LU T E M A X IM U M R A T IN G S (Tc = 25°C unless otherw ise noted)

Contextual Info: Back to FETs NSF40604 TO-258 POWER MOSFET N CHANNEL o 600 VOLTS 20.0 AMPS • R E P E T IT IV E A V A L A N C H E R A T IN G S • L O W R ds on • L O W D R IV E R E Q U IR E M E N T • D Y N A M IC d v / d t R A T IN G 1 2 3 0.4 A 1 Drain 2 Source 3 Gate

2950

Abstract: NSF40505 NSF40604 NSF406045 NSF40708 NSF40709 NSF40808 NSF40911 NSF40913 NSF41011
Contextual Info: N EW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-258 PACKAGE TO-258 • • • -DS on Id AMPS @0.5 ID OHMS Qg Q ss nc Pf Pd WATTS 1000 9.0 1.3 90 2950 250 NSF41011 1000 12.0 1.1 122 4200 250 NSF40913 900 9.0 1.3 90 2950 250 NSF40911 900 12.0 1.1 123

NSF40505

Abstract: NSF40604 NSF406045 NSF40708 NSF40709 NSF40808 NSF40911 NSF40913 NSF41011 NSF41013
Contextual Info: NEW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-258 PACKAGE TO-258 DEVICE TYPE VDSS VOLTS I*DS on @0.5 ID Id AMPS OHMS Qg nc Qss Pf Pd WATTS NSF41013 1000 9.0 1.3 90 2950 250 NSF41011 1000 12.0 1.1 122 4200 250 NSF40913 900 9.0 1.3 90 2950 250 NSF40911

CP666

Abstract: CP640 TO-213AA CP664
Contextual Info: FETS Page 1 of 7 Next Home Package Device Type BVDSS Volts RDS on @ 0.5 ID Ohms ID Continuous Amps IDM Pulse Drain Current Amps TO-5 NES130/5 100 0.18 8 32 25 TO-5 NES230/5 200 0.40 5.5 22 25 TO-213AA/66 NSFJ1000 1000 4.2 3.0 10 70 TO-213AA/66 NSFJ120 100

Contextual Info: N E W ENGLAND SEMICONDUCTOR POW ER MOSFETS N CHANNEL TO-258 PACKAGE TO-258 • • • 34 Qg AMPS ^DS on @0.5 ID OHMS nc Q ss pf Pd WATTS 1000 9.0 1.3 90 2950 250 NSF41011 1000 12.0 1.1 122 4200 250 NSF40913 900 9.0 1.3 90 2950 250 NSF40911 900 12.0 1.1 123