NSB2 Search Results

12v 6A transformer

Abstract: 12v 10A transformer MESB-24NO timer contactor NSC10 nh00 fuse Transformer 12V NSB06 MSTT-111 NSB16
Contextual Info: NSB MINIATURE CIRCUIT BREAKERS 6KA CAT REF RATING POLES MODULE 6A 10A 16A 20A 32A 40A 50A 1 1 1 1 1 1 1 1 1 1 1 1 1 1 NSB06 NSB10 NSB16 NSB20 NSB32 NSB40 NSB50 9 ACCESSORIES MCBLDX WPL MCB Locking device Padlock for MCBLDX NSC MODULAR CARTRIDGE FUSE HOLDERS WITH FUSE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRC4144E Silicon NPN epitaxial planar type For digital circuits Complementary to DRA4144E DRC2144E in NS through hole type package • Package  Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRC4144T Silicon NPN epitaxial planar type For digital circuits Complementary to DRA4144T DRC2144T in NS through hole type package • Features  Package  High forward current transfer ratio hFE with excellent linearity

IC marking TY

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSC4501 Silicon NPN epitaxial planar type For low frequency amplification DSC2501 in NS through hole type package • Package  Features  Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRA4124T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4124T DRA2124T in NS through hole type package • Features  Package  High forward current transfer ratio hFE with excellent linearity

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRA4152Z Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4152Z DRA2152Z in NS through hole type package • Features  Package  Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRA4523Y Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4523Y DRA2523Y in NS through hole type package • Package  Contributes to miniaturization of sets, mount area reduction

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRA4124T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4124T DRA2124T in NS through hole type package • Package  High forward current transfer ratio hFE with excellent linearity

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRC4114Y Silicon NPN epitaxial planar type For digital circuits Complementary to DRA4114Y DRC2114Y in NS through hole type package • Package  Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRA4114E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4114E DRA2114E in NS through hole type package • Features  Package  Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRA4114Y Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4114Y DRA2114Y in NS through hole type package • Package  Low collector-emitter saturation voltage VCE(sat)

Z247

Abstract: Z249 SI2000LSQ2180BYE-2.86E
Contextual Info: CHROMEGA VS. GOLD-0.07 ATOMIC PERCENT IRON THERMOCOUPLE Table of Temperature vs. Thermoelectric Voltage Temperature KELVIN E, µV Temperature (KELVIN) E, µV Temperature (KELVIN) E, µV Temperature (KELVIN) E, µV 545.40 561.86 578.31 594.76 611.22 70

Contextual Info: HN29V1G91T-30 128M x 8-bit AG-AND Flash Memory REJ03C0056-0300Z Rev. 3.00 Jun.03.2004 Description The HN29V1G91 series achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's previous multi level cell Flash memory, using 0.13µm process technology and AG-AND Assist GateAND type Flash memory cell using multi level cell technology provides both the most cost effective

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRA4143E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4143E DRA2143E in NS through hole type package • Features  Package  Low collector-emitter saturation voltage VCE(sat)

WYLEX

Abstract: carlo gavazzi SP 115 230
Contextual Info: domestic commercial industrial circuit protection Founded in 1897, Wylex introduced the first ‘consumer unit’ to the electrical industry, this original design was the forerunner to the ‘Standard Range’, which is still in wide use today across the world.

Contextual Info: Thermocouple Heads To Order Specify Model No. Material NB1A Cast Iron 92 (35⁄8) Type Cast NB2 Burnished Die Cast Aluminum Iron NB1A NB1A-0 NB1A-2 NB1A-4 $23 26 28 MADE IN USA 86 (33⁄8) Burnished Die Cast Aluminum NB2-0 NB2-2 NB2-4 23 26 28 NEPA NEPA-0

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRA4144T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4144T DRA2144T in NS through hole type package • Package  High forward current transfer ratio hFE with excellent linearity

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRC4144W Silicon NPN epitaxial planar type For digital circuits Complementary to DRA4144W DRC2144W in NS through hole type package • Package  Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRA4123J Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4123J DRA2123J in NS through hole type package • Features  Package  Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRC4114T Silicon NPN epitaxial planar type For digital circuits Complementary to DRA4114T DRC2114T in NS through hole type package • Package  High forward current transfer ratio hFE with excellent linearity

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSA4002 Silicon PNP epitaxial planar type For general amplification Complementary to DSC4002 DSA2002 in NS through hole type package • Features  Package  High forward current transfer ratio hFE with excellent linearity

HN29V1G91T-30

Abstract: NSB2 8029 l2 0004H 0005H HN29V1G91
Contextual Info: HN29V1G91T-30 128M x 8-bit AG-AND Flash Memory REJ03C0056-0400Z Rev. 4.00 Jul.20.2004 Description The HN29V1G91 series achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's previous multi level cell Flash memory, using 0.13µm process technology and AG-AND Assist GateAND type Flash memory cell using multi level cell technology provides both the most cost effective

varta v60r

Abstract: VARTA V170R GP60BNK-3A3H VARTA 60DK mempac 55611-702-012 varta v60r battery v60r 53310703012 QTC85
Contextual Info: 3 Volt Lithium Cells • 3.6 Lithium ■ Nicad Computer Packs ■ NIMH Computer Packs ■ Board Mount Lithium Batteries ■ PLC Batteries ■ Laptop Batteries ■ Bar Code Scanner Batteries ■ HELPFUL HINT Whether you are looking for a replacement battery for your laptop main power or memory backup or your customers bar code scanner. We have the battery!

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DRC4124E Silicon NPN epitaxial planar type For digital circuits Complementary to DRA4124E DRC2124E in NS through hole type package • Package  Low collector-emitter saturation voltage VCE(sat)