NS MA 1012 Search Results

M27C64-20

Abstract: H272M M27C64-25 M27C64-35 M271 M2732A M2764A M27C64
Contextual Info: in te T M27C64 64K 8K x 8 CHMOS UV ERASABLE PROM M ilita ry Fast Access Times: M27C64-20 200 ns M27C64-25 250 ns M27C64-35 350 ns CHMOS ll-E* Technology Extremely Low Power Consumption — 25 mA Maximum Active — 140 juA Maximum Standby Two-Line Control

SI8431

Abstract: Si8431A 60664-1 partial discharge Digital Isolators 4 channel Quad-Channel Digital Isolators SI8430-A-IS SI8430-C-IS SI8431-B-IS SOIC-16 VDE0884
Contextual Info: Si8430/31/35 T RIPLE - C HANNEL D IGITAL I SOLATOR Features Pin Assignments High-speed operation: DC – 150 Mbps Low propagation delay: <10 ns Wide Operating Supply Voltage: 2.375-5.5V Low power: I1 + I2 < 12 mA/channel at 100 Mbps Precise timing: 2 ns pulse width distortion

Contextual Info: Si8430/31/35 T RIPLE - C HANNEL D IGITAL I SOLATOR Features Pin Assignments High-speed operation: DC – 150 Mbps Low propagation delay: <10 ns Wide Operating Supply Voltage: 2.375-5.5V Low power: I1 + I2 < 12 mA/channel at 100 Mbps Precise timing: 2 ns pulse width distortion

Si8441A

Abstract: SI8441 si8440 si8445-b-is Si8445B Quad-Channel Digital Isolators Si8442 SOIC-16 VDE0884 Si8442B
Contextual Info: Si8440/41/42/45 Q UAD -C HANNEL D IGITAL I SOLATOR Features Pin Assignments High-speed operation: DC – 150 Mbps Low propagation delay: <10 ns Wide Operating Supply Voltage: 2.375–5.5 V Low power: I1 + I2 < 12 mA/channel at 100 Mbps Precise timing: 2 ns pulse width distortion

Contextual Info: FM28V100 1-Mbit Bytewide F-RAM Memory Features SRAM Replacement • JEDEC 128Kx8 SRAM pinout • 60 ns Access Time, 90 ns Cycle Time Low Power Operation • 2.0V – 3.6V Power Supply • Standby Current 90 µA typ • Active Current 7 mA (typ) Superior to Battery-backed SRAM Modules

Si8445B

Abstract: Si8441 Si8441A Si84xx Si8445-B-IS 315 MHz square antenna Digital Isolators 4 channel Quad-Channel Digital Isolators SI8440-C-IS SI8442-C-IS
Contextual Info: Si8440/41/42/45 Q UAD -C HANNEL D IGITAL I SOLATOR Features Pin Assignments High-speed operation: DC – 150 Mbps Low propagation delay: <10 ns Wide Operating Supply Voltage: 2.375–5.5 V Low power: I1 + I2 < 12 mA/channel at 100 Mbps Precise timing: 2 ns pulse width distortion

IN4735

Abstract: SD5000 quad AD668 AD668AQ AD668JQ AD668K AD668KQ AD668S AD668SQ
Contextual Info: a FEATURES Ultrahigh Speed: Current Settling to 1 LSB in 90 ns for a Full-Scale Change in Digital Input. Voltage Settling to 1 LSB in 120 ns for a Full-Scale Change in Analog Input 15 MHz Reference Bandwidth Monotonicity Guaranteed over Temperature 10.24 mA Current Output or 1.024 V Voltage Output

IN4735

Abstract: SD5000 AD668 AD668AQ AD668JQ AD668K AD668KQ AD668S AD668SQ
Contextual Info: a FEATURES Ultrahigh Speed: Current Settling to 1 LSB in 90 ns for a Full-Scale Change in Digital Input. Voltage Settling to 1 LSB in 120 ns for a Full-Scale Change in Analog Input 15 MHz Reference Bandwidth Monotonicity Guaranteed over Temperature 10.24 mA Current Output or 1.024 V Voltage Output

SD5000 quad

Abstract: AD668 AD668AQ AD668JQ AD668K AD668KQ AD668S AD668SQ
Contextual Info: a FEATURES Ultrahigh Speed: Current Settling to 1 LSB in 90 ns for a Full-Scale Change in Digital Input. Voltage Settling to 1 LSB in 120 ns for a Full-Scale Change in Analog Input 15 MHz Reference Bandwidth Monotonicity Guaranteed over Temperature 10.24 mA Current Output or 1.024 V Voltage Output

Contextual Info: a FEATURES Ultrahigh Speed: Current Settling to 1 LSB in 90 ns for a Full-Scale Change in Digital Input. Voltage Settling to 1 LSB in 120 ns for a Full-Scale Change in Analog Input 15 MHz Reference Bandwidth Monotonicity Guaranteed over Temperature 10.24 mA Current Output or 1.024 V Voltage Output

C14511

Contextual Info: BACK a FEATURES Ultrahigh Speed: Current Settling to 1 LSB in 90 ns for a Full-Scale Change in Digital Input. Voltage Settling to 1 LSB in 120 ns for a Full-Scale Change in Analog Input 15 MHz Reference Bandwidth Monotonicity Guaranteed over Temperature 10.24 mA Current Output or 1.024 V Voltage Output

Contextual Info: WTELEDYNE COMPONENTS TC170 CMOS CURRENT-MODE PWM CONTROLLER FEATURES • Low Supply Current With CMOS Technology. 3.8 mA Max Current-Mode Control Internal Fast Rise/Fall Times CL = 1000 p F . 50 ns

74158 free

Abstract: LT106 DAC169 74157 pin diagram 74158 datasheet IN4735 AD568 AD568J AD841 AD568K
Contextual Info: a FEATURES Ultrahigh Speed: Current Settling to 1 LSB in 35 ns High Stability Buried Zener Reference on Chip Monotonicity Guaranteed Over Temperature 10.24 mA Full-Scale Output Suitable for Video Applications Integral and Differential Linearity Guaranteed Over

W29200

Abstract: LT106 ZR2504 74158 free Zyrel zr25 ad5683 IN4*735
Contextual Info: BACK a FEATURES Ultrahigh Speed: Current Settling to 1 LSB in 35 ns High Stability Buried Zener Reference on Chip Monotonicity Guaranteed Over Temperature 10.24 mA Full-Scale Output Suitable for Video Applications Integral and Differential Linearity Guaranteed Over

Contextual Info: 2934A CMOS 4K-Bit Serial EEPROM Compatible with NMC93C66, NS Code Technology, Incorporated Features • Standard Temp Range, -40°C to +85°C ■ Low Power Consumption - Operating: 2.0 mA max. - Standby: 1.0 pA max. ■ ■ Compatible with National Semiconductor

signetics 74F20

Contextual Info: Philips Semiconductors-Signetics Document No. 853-0332 ECN No. 95935 Date of issue March 3, 1989 Status Product Specification FAST Products FAST 74F20 G ate Dual 4-lnput NAND Gate TYPICAL PROPAGATION DELAY TYPE 74F20 TYPICAL SUPPLY CURRENT TOTAL 3.5 ns 2.2 mA

2913A

Abstract: 2913C seeq 2913a e2913a YR13
Contextual Info: _ 2913A/C CMOS 1K-Bit Serial EEPROM with Memory Protection, NS Code Technology, Incorporated • ■ ■ Low Power Consumption - Operating: 2.0 mA max. - Standby: 1.0 fiA max. Wide Operating Voltage Range - Write: 2 .7 to 6.5 V - Read: 1.8 to 6.5 V ■

462C

Abstract: S3LV308Q-1
Contextual Info: >MCC DEVICE SPECIFICATION S3LV308 2Q-OUTPUT LVTTL CLOCK DRIVER APPLICATIONS FEATURES • 20 clock outputs at primary frequency up to 100 MHz • All outputs are leading edge synchronized to within <0.5 ns • Proprietary output drivers with: - Complementary 24 mA peak outputs, source

D843 transistor

Abstract: C11x 001135N AC16D
Contextual Info: 16-Bit High Speed Current-Output DAC DAC16 ANALOG DEVICES FUNCTIONAL BLOCK DIAGRAM FEATURES ±1 LSB Differential Linearity max G uaranteed M onotonic Over Tem perature Range ± 2 LSB Integral Linearity (max) 500 ns S ettling Tim e 5 mA Full-Scale O utput

BPX61

Abstract: Q62702-P25
Contextual Info: BPX 61 BPX 61 fmo06011 Silizium-PIN-Fotodiode Silicon PIN Photodiode Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm ● Kurze Schaltzeit typ. 20 ns

Q62702-P1605

Abstract: 27bp
Contextual Info: BP 104 S feo06862 Silizium-PIN-Fotodiode Silicon PIN Photodiode Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm ● Kurze Schaltzeit typ. 20 ns

Q62702-P1602

Abstract: S8050
Contextual Info: BPW 34 S feo06862 Silizium-PIN-Fotodiode Silicon PIN Photodiode Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm ● Kurze Schaltzeit typ. 20 ns

Contextual Info: DEVICE SPECIFICATION 20-O U TPU T LVTTL C LO C K DRIVER FEATURES • 20 clock outputs at primary frequency up to 100 MHz • All outputs are leading edge synchronized to within <0.5 ns • Proprietary output drivers with: - Complementary 24 mA peak outputs, source

sfh 206

Abstract: 850 nm LED foto transistor S8050 TCI circuit Q62702-P129
Contextual Info: SFH 206 K feo06647 Silizium-PIN-Fotodiode Silicon PIN Photodiode Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm ● Kurze Schaltzeit typ. 20 ns