NS 4150 DA Search Results

Contextual Info: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr Data S heet No. 2N 4150 o % #f 1 l $ I c I ^88888 id L S E M IC O N D U C T O R S G eneric Part Num ber: 2N4150 Type 2N4150 Geometry 9201 Polarity NPN Qual Level: JAN - JANTXV

diode 4148

Abstract: T 4148 diode IN 4148 diode 4151 IN 4148 diode LL4150 LL4148-1 4148 4151 diode datasheet 4448
Contextual Info: LL 4148, LL 4150, LL 4151, LL 4448 Surface Mount Silicon Planar Diodes Silizium-Planar-Dioden für die Oberflächenmontage ±0.1 0.3 3.5±0.1 0.3 1.45 ±0.1 Nominal current Nennstrom 150.300 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung

Contextual Info: , Line. J.E.IIE. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Damper diode BY428 FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed construction.

45N120

Abstract: IXSH45N120 45N120 ixys
Contextual Info: High Voltage, Low VCE sat IGBT IXSH 45N120 VCES IC25 VCE(sat) Maximum Ratings TO-247 AD = 1200 V = 70 A = 3V Short Circuit SOA Capability Preliminary data Symbol Test Conditions VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1200

Contextual Info: High Voltage, High speed IGBT IXSH 35N140A VCES IC25 VCE sat = 1400 V = 70 A = 4V Short Circuit SOA Capability Advanced data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1400 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1400 V VGES Continuous

Contextual Info: IN 4148, IN 4150, IN 4151, IN 4448, Small Signal Si-Diodes Si-Allzwech-Dioden Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung .ÇsO Ct V J 5 0 . ,100 V H Hrgl9 j £ 150 mA nox, Cvo EM Glass case Glasgehäuse DO-35

Diode 4148 MINIMELF

Contextual Info: LL 4148, LL 4150, LL 4151, LL 4448, Si-Allzweck-Dioden für die Oberflächenmontage Surface Mount Small Signal Si-Diodes 150 niA Nominal current Nennstrom 50. 100 V Repetitive peak reverse voltage Periodische Spitzensperrspannung SOD-80 Glass case MiniMELF

Varistor 271

Contextual Info: HC SERIES Date: 07/22/2010 S66ZOV131HC MAIDA STYLE NUMBER MAIDA ITEM NUMBER Electrical Specifications 01-1879 Physical Specifications Continuous AC Voltage 130 VAC Lead Style 059L1 Continuous DC Voltage 175 VDC X Nominal 0.394 in. 200 uA X Tolerance Low Varistor Voltage Limit

TOPD30

Abstract: TOPD300 InGaAs Photodiode 1550nm IR LASER 1550nm 07255 thermistor 054
Contextual Info: T—41—50 TOSHIBA -CLASER/FBR O P T I O OIE D Bi ^0^7255 GülblDO T • TOSfc. TOSHIBA PIN PHOTODIODE TOPD300 Features • • • • • • • InGaAs PIN Structure Mesa Type Chip-carrier Wavelength 0.8~1.6/tm High Speed 0.5ns Max Low Dark Current 10nA Max

Contextual Info: INTERNATIONAL RECTIFIER 48 5 5 4 5 2 SS INTERNATIONAL RECTIFIER m T| 4 8 5 5 ^ 2 QQQS11S S~|~~ 55 C 05115 Data Sheet No. PD-2.081 INTERNATIONAL RECTIFIER IO R - T 0 3 - A J 55HQ SERIES 60 Amp Schottky Power Rectifiers Major Ratings and Characteristics Characteristic

thermistor 054

Contextual Info: TOSHIBA -CLASER/FBR O P T I O DIE D • ^0^7552 001^105 3 « T O S b . T-4Ì-5Q TOSHIBA PIN PHOTODIODE TOPD320 Features • • • • • • • InGaAs PIN Structure Mesa Type i4.6mm Window Package Wavelength 0.8~1.6//m High Speed 0.5ns Max Low Dark Current 10nA Max

Contextual Info: Product specification PMV32UP 20 V, 4 A P-channel Trench MOSFET Rev. 1 — 11 March 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: Product specification PMV48XP 20 V, 3.5 A P-channel Trench MOSFET Rev. 1 — 21 December 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

Contextual Info: Product specification PMV33UPE 20 V, single P-channel Trench MOSFET Rev. 1 — 12 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: LS4150 FAST SWITCHING SURFACE MOUNT DIODES POWER 50 Volts VOLTAGE 500 mWatts 0.063 1.6 MECHANICAL DATA 0.020(0.5) 0.012(0.3) • Case: QUADRO Melf, Glass • Terminals: Solderable per MIL-STD-750, Method 2026 • Polarity: Cathode Band • Marking: Cathode Band Only

Contextual Info: LS4150 FAST SWITCHING SURFACE MOUNT DIODES POWER 50 Volts VOLTAGE 500 mWatts 0.063 1.6 MECHANICAL DATA 0.020(0.5) 0.012(0.3) • Case: QUADRO Melf, Glass • Terminals: Solderable per MIL-STD-750, Method 2026 • Polarity: Cathode Band • Marking: Cathode Band Only

Contextual Info: * 8-BIT RIPPLE COUNTER SYNERG Y SY10E137 SYIOOEI37 SEMICONDUCTOR DESCRIPTION FEATURES • 1.8GHz min. count frequency ■ Extended 100E V ee range of -4.2V to -5.5V ■ Synchronous and asynchronous enable pins ■ Differential clock input and data output pins

88N20

Abstract: 30NC60
Contextual Info: HiPerFETTM Power MOSFETs IXFH 88N20Q IXFK 88N20Q IXFX 88N20Q VDSS ID25 = 200 V = 88 A Ω = 30 mΩ ≤ 200 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C

1.50 MKT - 2200PF - 630V

Abstract: A50eF arcotronics 2,2uF 400v A50Q a50 arcotronics 1.50 MKT - 0.047UF - 100V arcotronics 6,8uF 400v capacitor 1.5nf 100v mkt a50d
Contextual Info: A50 MKT Series METALLIZED POLYESTER FILM CAPACITOR MULTIPURPOSE APPLICATIONS Typical applications: blocking, coupling, decoupling, by-passing, interference suppression in low voltage applications i.e.:AUTOMOTIVE . PRODUCT CODE: A50 D max <7 0.6 0 d± 0.05

TPM relay

Abstract: 2SD1726 T151 T460 T760 T930
Contextual Info: 2SD1726 TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON NPN = «teiJ SW ITCHING l* N N I: Features hFE*''Bv.' High D. C. c u rre n t gain H igh reliability I A p p lica tio n s X 'f 'r T - y ? I 'X o . i '—9 D C -D C 3> '/< —9 V J ' / K X x —HJU'—

laser diode toshiba

Contextual Info: TOSHIBA LASER/FBR OPTIC 01 D • «10*17555 OOlbORB b ■ TOSb | ' TOSHIBA LASER DIODE TOLD 310 FEATURES • • • • • Wavelength 1.31 pm Coaxial Package (Hermetically Sealed) Suitable for High Bit Rate Modulation Single-mode Fiber Pigtail Power Monitoring (GePD)

CD 76 13 CP

Contextual Info: 108 CONNECTION DIAGRAM PINOUT A 54H/74H108 6 //t>/7 DUAL JK EDGE-TRIGGERED FLIP-FLOP With Separate Sets, A Common Clear and Clock DESCRIPTION — The '108 is a high speed J K negative edge-triggered flipflop. It features individual J , K, and asynchronous Set inputs to each flip-flop

p1aa

Contextual Info: INTEGRATED DEVICE 3ÔE D • 4A2S771 0007174 Ô ■ IDT _ "T- Hfc-2.2-11 2 X 4K x 60 DATA/INSTRUCTION CACHE MODULE FOR IDT79R3000 MULTIPROCESSOR _ PRELIM INARY IDT7MB6064 FEATURES: DESCRIPTION: • High-speed CEMOS static RAM module constructed

TOLD320

Contextual Info: OSHIBA LASER/FBR OPTIC Gl ]> m ^ 0 ci72S2 ODlfc.Q'ìS T »T O S ti 0 TOSHIBA LASER DIODE TOLD 320 Features Wavelength 1.31i*m Simple Coaxial Package Suitable for Local Subscriber Networks Single-mode Fiber-Pigtail (10/125/«m) Hermetically Sealed Power monitoring (Ge PD)