NS 21L1 Search Results

L15A

Abstract: MCM2125A
Contextual Info: MCM2115A MCM21L15A MCM2125A MCM21L25A M O TO R O LA 1024 x 1 STATIC RAM MOS T h e M C M 2 1 1 5 A a n d M C M 2 1 2 5 A fa m ilie s a re h ig h -s p e e d , 1024 w o r d s b y o n e -b it, ra n d o m -a c c e s s m e m o rie s fa b ric a te d u s in g H M O S , h ig h ­

1024x1 static ram

Abstract: L15A L25A MCM2125A mcm2115a-45 2115A 530ns
Contextual Info: MCM2115A MCM21L15A MCM2125A MCM21L25A MOTOROLA 1024x1 STATIC RAM M O S T h e M C M 2 1 1 5 A a n d M C M 2 1 2 5 A f a m ili e s a r e h i g h - s p e e d , 1 0 2 4 w o r d s b y o n e - b it , ra n d o m -a c c e s s m e m o r ie s fa b r ic a te d p e r f o r m a n c e N - c h a n n e l s i li c o n - g a t e t e c h n o lo g y .

ic vertical la 78141

Abstract: IC LA 78141 schematic LA 78141 tv application circuit 4116 ram tda 78141 TMS4500 LA 78141 VERTICAL 21L14 mitsubishi elevator circuit diagram 4464 64k dram
Contextual Info: MOS Memory Data Book 1984 Commercial and Military Specifications ♦ Texas In str u m en ts Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide Glossary/Timing Conventions/Data Sheet Structure Dynamic RAM and Memory Support Devices

information applikation

Abstract: U880D information applikation mikroelektronik Halbleiterbauelemente DDR "Mikroelektronik" Heft u880 mikroelektronik applikation VEB mikroelektronik mikroelektronik information applikation mikroelektronik DDR
Contextual Info: i« ¡ 2 Information Applikation t m f f i ^ o e l e k t s n o •/ Information Applikation n • Heft 30: HALBLEITERSPEICHER Teil 2 SRAM und DRAM v e b halbleiterw erk frankfurfc/odor KBD im veb Kombinat mikroelektronik KAMMER DER TECHNIK Bezirksverbond

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

mcm6830

Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
Contextual Info: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories

SSM3K15FV

Contextual Info: SSM3K15FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FV High Speed Switching Applications Analog Switch Applications 0.22±0.05 Unit: mm 0.32±0.05 1.2±0.05 0.8±0.05 : Ron = 7.0 Ω max (@VGS = 2.5 V) 0.4 : Ron = 4.0 Ω (max) (@VGS = 4 V)

Contextual Info: SSM3K15FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FV High Speed Switching Applications Analog Switch Applications 0.22±0.05 Unit: mm : Ron = 7.0 Ω max (@VGS = 2.5 V) 0.4 : Ron = 4.0 Ω (max) (@VGS = 4 V) Unit Drain-source voltage

Contextual Info: SSM3K15FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FV High Speed Switching Applications Analog Switch Applications 0.22±0.05 Unit: mm • Low on-resistance 1.2±0.05 0.32±0.05 Optimum for high-density mounting in small packages 0.8±0.05

SSM3J16FV

Contextual Info: SSM3J16FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16FV High Speed Switching Applications Analog Switch Applications Symbol Rating Unit Drain-Source voltage VDS −20 V Gate-Source voltage VGSS ±10 V ID −100 IDP −200 PD Note 150

2SC5376FV

Abstract: sat 1205
Contextual Info: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications VCE sat (1) = 15 mV (typ.) 1.2±0.05 0.32±0.05 Low Collector Saturation Voltage: 0.22±0.05 •

Contextual Info: SSM3K44MFV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K44MFV High Speed Switching Applications Analog Switch Applications Compact package suitable for high-density mounting • Low ON-resistance : RDS ON = 4.0 Ω (max) (@VGS = 4 V) 1.2±0.05

Contextual Info: SSM3K44MFV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K44MFV High Speed Switching Applications Analog Switch Applications Compact package suitable for high-density mounting • Low ON-resistance : RDS ON = 4.0 VDSS 30 V V VGSS ±20 ID

SSM3K15FV

Contextual Info: SSM3K15FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FV High Speed Switching Applications Analog Switch Applications Optimum for high-density mounting in small packages • Low on-resistance 1.2±0.05 0.32±0.05 • 0.22±0.05 Unit: mm

Contextual Info: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications VCE sat (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA 0.4 1 2 3 Rating Unit Collector-base voltage

SSM3K15FV

Contextual Info: SSM3K15FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15FV High Speed Switching Applications Analog Switch Applications 0.22±0.05 Unit: mm 0.8±0.05 : Ron = 7.0 Ω max (@VGS = 2.5 V) 0.4 1.2±0.05 : Ron = 4.0 Ω (max) (@VGS = 4 V)

Contextual Info: SSM3J15FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FV High Speed Switching Applications Analog Switch Applications Unit: mm Low on-resistance Rating Unit Drain-Source voltage VDS −30 V Gate-Source voltage VGSS ±20 V DC ID −100

SSM3J15FV

Contextual Info: SSM3J15FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FV High Speed Switching Applications Analog Switch Applications Unit: mm Low on-resistance Rating Unit Drain-Source voltage VDS −30 V Gate-Source voltage VGSS ±20 V ID −100 IDP

SSM3K16FV

Contextual Info: SSM3K16FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FV High Speed Switching Applications Analog Switch Applications : Ron = 15 Ω max (@VGS = 1.5 V) 0.4 Drain-Source voltage Gate-Source voltage DC Drain current Pulse Drain power dissipation (Ta = 25°C)

Contextual Info: SSM3J36MFV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J36MFV ○ Power Management Switches 1.5-V drive Low ON-resistance: Ron = 3.60 Ω max (@VGS = -1.5 V) : Ron = 2.70 Ω (max) (@VGS = -1.8 V) : Ron = 1.60 Ω (max) (@VGS = -2.8 V) : Ron = 1.31 Ω (max) (@VGS = -4.5 V)

Contextual Info: SSM3J16FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16FV High Speed Switching Applications Analog Switch Applications Characteristics Symbol Rating Unit Drain-Source voltage VDS −20 V Gate-Source voltage VGSS ±10 V DC ID −100 Pulse

on semiconductor marking KZ

Contextual Info: SSM3K35MFV TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35MFV ○ High-Speed Switching Applications ○ Analog Switch Applications : Ron = 4 Ω max (@VGS = 2.5 V) : Ron = 3 Ω (max) (@VGS = 4.0 V) Characteristic Symbol Rating Unit Drain–source voltage

Contextual Info: SSM3K38MFV TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K38MFV ○ High-Speed Switching Applications ○ Analog Switch Apllications 4 Ω max (@VGS = 2.5 V) : Ron = 3 Ω (max) (@VGS = 4.0 V) Characteristic Symbol Rating Unit Drain–source voltage

Contextual Info: SSM3J16FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16FV High Speed Switching Applications Analog Switch Applications Unit: mm Low on-resistance : Ron = 8 Ω max (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V) : Ron = 45 Ω (max) (@VGS = −1.5 V)