NPN TRANSISTORS 700V 1A Search Results

743 ic

Abstract: JE13009 MJE13009 IC 741 AMP
Contextual Info: MJE13009 NPN POWER TRANSISTORS 400 VOLTS 12 AMP, 100 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. NPN COLLECTOR Features: • VCEO sus - 400V (Min). • VCEV = 700V blocking capability

TI3007

Abstract: UMT13007 UMT1300S 100C 100-C UMT13006
Contextual Info: UMT13006 UMT13007 POWER TRANSISTORS 8A, 700V, Fast Switching, Silicon NPN Mesa FEATURES DE S C R IP T IO N • • • • • • These high voltage glass passivated power transistors, in a plastic TO 220AB package, combine fast switching, low saturation

e13005 2

Abstract: E13005 MJE1300 E13005 -2 transistor E13005 E13005 D e13005- 2 transistors mje13005 npn transistors 700V 1A UJ05
Contextual Info: MJE13005 NPN POWER TRANSISTORS 400 VOLTS 4 AMP, 75 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. Features: • V C E O su s = 400V (Min). • VcEV = 700V blocking capability CASE STYLE T0-220AB

MJE13007

Abstract: v733 VCB 400V MJE13 U105
Contextual Info: MJE13007 NPN POWER TRANSISTORS 400 VOLTS 8 AMP, 80 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. Features: • VcEO sus = 400V (Min). • VCEV = 700V blocking capability C A S E S T Y L E T0-220AB

Contextual Info: HARR IS S E M I C O N D SECTOR 27E » • 4302271 0Q2QM?b Q * H A S Power T ra n sis to rs - MJE13009 File Number 15.92 T -3 3 - »3 High-Speed Silicon N-P-N

2n5157

Contextual Info: SavantIC Semiconductor Product Specification 2N5157 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage APPLICATIONS ·Switching regulator ·Inverters ·Solenoid and relay drivers ·Motor controls PINNING See Fig.2 PIN

2N5157

Contextual Info: Product Specification www.jmnic.com 2N5157 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage APPLICATIONS ・Switching regulator ・Inverters ・Solenoid and relay drivers ・Motor controls PINNING See Fig.2 PIN DESCRIPTION

MJE13005

Abstract: MJE13005 2 equivalent mje13005 transistors mje13005 npn transistors 700V 1A
Contextual Info: SavantIC Semiconductor Product Specification MJE13005 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/

act30bht

Abstract: 13003 transistor power supply circuits ACT30BHT-A 13003 MOSFET transistor ACT30AHT-A 13002 and 13003 power transistor act30b E 13003 TRANSISTOR npn transistors 400V low power to92 flyback 13003
Contextual Info: Datasheet Rev 2, 5/2005 ACT30 ACT30 HIGH PERFORMANCE OFF-LINE CONTROLLER ActiveSwitcherTM IC Family FEATURES GENERAL DESCRIPTION Lowest Total Cost Solution 0.15W Standby Power Emitter Drive Allows Safe NPN Flyback Use Hiccup Mode Short Circuit Current Mode Operation

act30bht

Abstract: 13003 transistor power supply circuits 13003 MOSFET transistor ACT30BHT-A ACT30AHT-A act30aht ACT30 flyback 13003 act30bh act30 application
Contextual Info: Datasheet Rev 2, 5/2005 ACT30 ACT30 HIGH PERFORMANCE OFF-LINE CONTROLLER ActiveSwitcherTM IC Family FEATURES GENERAL DESCRIPTION Lowest Total Cost Solution 0.15W Standby Power Emitter Drive Allows Safe NPN Flyback Use Hiccup Mode Short Circuit Current Mode Operation

mje13009l

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They

mje13009 equivalent

Abstract: 2N2222 SOA mje13009l MJE13009L-T3P-T QW-R214-011 2n2222 transistor pin b c e 3V to 350V dc dc converter MJE13009-T3P-T 2N2222 transistor output curve free transistor and ic equivalent data
Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They

mje13009 equivalent

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They

BUV48CFI

Abstract: npn transistors 700V 1A tc2555
Contextual Info: SavantIC Semiconductor Product Specification BUV48CFI Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package. ·High voltage. ·Fast switching speed. APPLICATIONS ·Linear and switching industrial equipment. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

BUX48C

Contextual Info: SavantIC Semiconductor Product Specification BUX48C Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ·Fast switching speed APPLICATIONS ·Linear and switching industrial equipment. PINNING see fig.2 PIN DESCRIPTION 1 Base 2 Emitter

BUL6825

Abstract: npn transistors 700V 1A
Contextual Info: SavantIC Semiconductor Product Specification BUL6825 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ,high speed APPLICATIONS ·Relay drivers ·Inverters ·Switching regulators ·Deflection circuits PINNING PIN DESCRIPTION 1

MJE13005

Abstract: mje130 npn transistors 700V 1A MJE-13005 equivalent mje13005 MJE13005 2
Contextual Info: Inchange Semiconductor Product Specification MJE13005 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed APPLICATIONS ・Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/

BUL128D

Contextual Info: Inchange Semiconductor Product Specification BUL128D Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·High voltage ,high speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost

Contextual Info: Power T r a n s is t o r s - - M JE 1 3 0 0 7 HARRIS SEMICOND File N um ber SECTOR 2?E » B 4302271 D OS DMb b 15.90 6 MHAS T -S 5 - ' 3 H igh-Speed Silicon N-P-N

BUX48C

Contextual Info: Inchange Semiconductor Product Specification BUX48C Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ・Fast switching speed APPLICATIONS ・Linear and switching industrial equipment. PINNING see fig.2 PIN DESCRIPTION 1 Base

STC13007

Abstract: npn transistors 700V 1A L1340 f259
Contextual Info: STC13007 !!!!!!!!! !!NPN POWER TRANSISTORS FEATURES HIGH SPEED SWITCHING HIGH VOLTAGE CAPABILITY WIDE SOA APPLICATION: FLUORESCENT LAMP ELECTRONIC BALLAST  SWITCH POWER SUPPLY  Absolute Maximum Ratings Tc=25qC TO-220 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

MJE13009L

Abstract: mje13009 equivalent MJE13009-T3P-T 2n2905 time delay relay jc 5010 transistor 1N4933 MJE13009 MJE13009L-T3P-T MJE13009-TA3-T MJE13009-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS 1 TO-3P DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are

npn transistors 400V 1A To92

Contextual Info: 3DD13003B NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 3. BASE 1.25MAX 2.92 MIN power switching applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Collector-Base Voltage VCBO VCEO Collector-Emitter Voltage

EB 13005

Abstract: Transistors 13005 D MJE13004
Contextual Info: 7 ^ 5 ^ 5 3 7 0 0 5 ^ 1 0 5 1 13004 13005 • SGS-THOMSON ¡ILIOTa «! S G S-TH0MS0N MJE MJ E 3DE D HIGH VOLTAGE POWER SWITCH DESCRIPTION The MJE13004/13005 are silicon muitiepitaxial me­ sa NPN transistors in JedecTO -220 plastic package particularly intended for switch-mode applications.