NPN TRANSISTOR IC MAX 3A Search Results
NPN TRANSISTOR IC MAX 3A Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| RX1214B130YI |
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NPN microwave power transistor |
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| MX0912B251Y |
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NPN microwave power transistor |
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| RZ1214B35YI |
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NPN microwave power transistor |
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| 2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet |
NPN TRANSISTOR IC MAX 3A Datasheets Context Search
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Contextual Info: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A) |
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2SD880 2SD880 2SB834 O-220 300mA 500mA 500mA, | |
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Contextual Info: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A) |
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2SD880 2SD880 2SB834 O-220 QW-R203-013 | |
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Contextual Info: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A) |
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2SD880 2SD880 2SB834 O-220 QW-R203-013 | |
2SD880L
Abstract: 2sd880 equivalent utc 2SD880L QW-R203-013 2SB834 2SD880 power transistor audio amplifier 500 watts
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2SD880 2SD880 2SB834 O-220 2SD880L QW-R203-013 2SD880L 2sd880 equivalent utc 2SD880L 2SB834 power transistor audio amplifier 500 watts | |
UTC2SD880
Abstract: 2sd880 equivalent 2SB834 2SD880 QW-R203-013
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2SD880 2SD880 2SB834 O-220 300mA 500mA 500mA, QW-R203-013 UTC2SD880 2sd880 equivalent 2SB834 | |
2SD880L
Abstract: 2SD880 2sd880 equivalent 2sd880 datasheet 013 transistor 2SB834 QW-R203-013 transistor 2sd880 hfe-300 utc 2SD880L
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2SD880 2SD880 2SB834 2SD880L-TA3-T 2SD880G-TA3-T O-220 QW-R203-013 2SD880L 2sd880 equivalent 2sd880 datasheet 013 transistor 2SB834 transistor 2sd880 hfe-300 utc 2SD880L | |
2SD880
Abstract: 2sD880 TRANSISTOR 2SD880L
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2SD880 2SD880 2SB834 2SD880G-AB3-R 2SD880L-TA3-T 2SD880G-TA3-T OT-89 O-220 2sD880 TRANSISTOR 2SD880L | |
2SD880LContextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A) |
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2SD880 2SD880 2SB834 2SD880L-TA3-T 2SD880G-TA3-T O-220 QW-R203-013 2SD880L | |
2sd880
Abstract: 2SD880L utc 2SD880L 2SD880, 1.5 power dissipation transistor 2sd880 013 transistor
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2SD880 2SD880 2SB834 2SD880L-TA3-T 2SD880G-TA3-T O-220 QW-R203-013 2SD880L utc 2SD880L 2SD880, 1.5 power dissipation transistor 2sd880 013 transistor | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =0.4V max / IC=3A, IB=0.3A ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free |
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2SD1060 2SD1060L-x-AB3-R 2SD1060G-x-AB3-R OT-89 2SD1060L-x-TA3-T 2SD1060G-x-TA3-T O-220 2SD1060L-x-TF3-T 2SD1060G-x-TF3-T O-220F | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1060/A NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =0.4V max / IC=3A, IB=0.3A ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free |
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2SD1060/A 2SD1060G-x-AB3-R OT-89 2SD1060AG-x-AB3-R 2SD1060L-x-TA3-T 2SD1060G-x-TA3-T O-220 2SD1060L-x-TF3-T 2SD1060G-x-TF3-T | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =0.4V max/IC=3A, IB=0.3A ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1060L-x-AB3-R |
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2SD1060 2SD1060L-x-AB3-R 2SD1060G-x-AB3-R 2SD1060L-x-T60-K 2SD1060G-x-T60-K 2SD1060L-x-T92-B 2SD1060G-x-T92-B 2SD1060L-x-T92-K 2SD1060G-x-T92-K 2SD1060L-x-T92-R | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR FEATURES * Low collector-to-emitter saturation voltage: VCE SAT =0.4V max/IC=3A, IB=0.3A ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1060L-x-AB3-R |
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2SD1060 2SD1060L-x-AB3-R 2SD1060G-x-AB3-R 2SD1060L-x-T60-K 2SD1060G-x-T60-K 2SD1060L-x-T92-B 2SD1060G-x-T92-B 2SD1060L-x-T92-K 2SD1060G-x-T92-K 2SD1060L-x-TA3-T | |
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Contextual Info: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A APPLICATIONS 1 *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching. |
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2SD1060 O-252 QW-R209-002 | |
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Contextual Info: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A APPLICATIONS 1 *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching. |
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2SD1060 O-126 QW-R204-012 | |
2SD1060
Abstract: transistor 2sD1060
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2SD1060 OT-89 QW-R208-023 2SD1060 transistor 2sD1060 | |
transistor 2sD1060
Abstract: npn transistor 3A 2SD1060
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2SD1060 O-220 QW-R203-016 transistor 2sD1060 npn transistor 3A 2SD1060 | |
IC 630Contextual Info: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A • |
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ZXTC6717MC 100mV -140mV DS31926 IC 630 | |
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Contextual Info: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A • |
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ZXTC6717MC 100mV -140mV DS31926 | |
DFN3020Contextual Info: A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 80V • IC = 3.5A Continuous Collector Current • Low Saturation Voltage 185mV max @ 1A |
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ZXTC6720MC 185mV -220mV DS31929 DFN3020 | |
IC 630Contextual Info: A Product Line of Diodes Incorporated ZXTC6719MC DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A |
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ZXTC6719MC 100mV -220mV DS31928 IC 630 | |
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Contextual Info: A Product Line of Diodes Incorporated ZXTC6719MC DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 50V • IC = 4A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A |
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ZXTC6719MC 100mV -220mV DS31928 | |
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Contextual Info: A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 80V • IC = 3.5A Continuous Collector Current • Low Saturation Voltage 185mV max @ 1A |
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ZXTC6720MC 185mV -220mV DS31929 | |
transistor A2
Abstract: Marking Y1 SOT26 DFN3020 diodes transistor marking k2 dual
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ZXTNS618MC 150mV 500mV DS31933 transistor A2 Marking Y1 SOT26 DFN3020 diodes transistor marking k2 dual | |