NPN TRANSISTOR 1500V 20A Search Results
NPN TRANSISTOR 1500V 20A Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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RX1214B130YI |
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NPN microwave power transistor |
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MX0912B251Y |
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NPN microwave power transistor |
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RZ1214B35YI |
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NPN microwave power transistor |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet |
NPN TRANSISTOR 1500V 20A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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NPN Transistor 1500V
Abstract: transistor tl 187 187 npn transistor NPN Transistor 1500V 20a NTE238
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NTE238 NTE238 Cont00V, NPN Transistor 1500V transistor tl 187 187 npn transistor NPN Transistor 1500V 20a | |
NTE2301Contextual Info: NTE2301 Silicon NPN Transistor High Voltage Horizontal Output Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Glassivated Base–Collector Junction |
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NTE2301 NTE2301 | |
NTE389Contextual Info: NTE389 Silicon NPN Transistor Horizontal Output Description: The NTE389 is a high voltage silicon NPN power transistor in a TO3 type case designed for use in CRT horizontal deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Glass Passivated Base–Collector Junction |
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NTE389 NTE389 | |
Contextual Info: Ordering number : ENN6608~[ _ NPN Triple Diffused Planar Silicon Transistor _ 2SC5682 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed. • High breakdown voltage VCBO= 1500V . |
OCR Scan |
ENN6608~ 2SC5682 2SC5682] | |
2SC5683Contextual Info: Ordering number : ENN6653A 2SC5683 NPN Triple Diffused Planar Silicon Transistor 2SC5683 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO=1500V . |
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ENN6653A 2SC5683 2SC5683] 2SC5683 | |
TA-2891
Abstract: 2sc5682 ENN6608a
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ENN6608A 2SC5682 2SC5682] TA-2891 2sc5682 ENN6608a | |
TA-3147
Abstract: 2SC5683
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ENN6653A 2SC5683 2SC5683] TA-3147 2SC5683 | |
2SD2634Contextual Info: Ordering number:ENN6474A NPN Triple Diffused Planar Silicon Transistor 2SD2634 Color TV Horizontal Deflection Output Applications Features Package Dimensions • High speed. · High breakdown voltage VCBO=1500V . · High reliability (Adoption of HVP process). |
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ENN6474A 2SD2634 2SD2634] 2SD2634 | |
TA-2595
Abstract: 2sd2634
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ENN6474 2SD2634 2SD2634] TA-2595 2sd2634 | |
TT2190
Abstract: 7551-1 TT2190LS TT219
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ENN7551 TT2190LS 2079D TT2190LS] O-220FI TT2190 7551-1 TT2190LS TT219 | |
2SD2634
Abstract: TA-3147 TA-2914
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ENN6474B 2SD2634 2SD2634] 2SD2634 TA-3147 TA-2914 | |
IT02410
Abstract: 2SC5723 A1030 40c208
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ENN7398 2SC5723 2048B 2SC5723] IT02410 2SC5723 A1030 40c208 | |
NPN VCEO 800V
Abstract: NTE2533
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NTE2533 100ns 100mA, NPN VCEO 800V NTE2533 | |
2SC5723Contextual Info: Ordering number : ENN7398 2SC5723 NPN Triple Diffused Planar Silicon Transistor 2SC5723 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process). |
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ENN7398 2SC5723 2048B 2SC5723] 2SC5723 | |
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IC 7402
Abstract: 7402 data sheet IC 7402 datasheet IC 7402 7402 ic datasheet 7402 ic 2SC5722
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2SC5722 ENN7402 IC 7402 7402 data sheet IC 7402 datasheet IC 7402 7402 ic datasheet 7402 ic 2SC5722 | |
200V transistor npn 2a
Abstract: 2SD1885C
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ENN7087 2SD1885C 2SD1885C] 200V transistor npn 2a 2SD1885C | |
NTE2331
Abstract: NPN VCEO 800V transistor for horizontal deflection output
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NTE2331 100nsec) NTE2331 NPN VCEO 800V transistor for horizontal deflection output | |
NPN Transistor 1500V 20aContextual Info: 2SC5683 NPN Triple Diffused Planar Silicon Transistor Very High-Definition CRT DisplayHorizontal Deflection Output Applications TENTATIVE Features • Hihg speed. • High breakdown voltage VCBO=1500V . • High reliability( Adoption of HVP process ). •Adoption of MBIT process. |
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2SC5683 100mA, 991208TM2fXHD NPN Transistor 1500V 20a | |
2SD2650Contextual Info: Ordering number : ENN6781A 2SD2650 NPN Triple Diffused Planar Silicon Transistor 2SD2650 Color TV Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process). Adoption of MBIT process. |
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ENN6781A 2SD2650 2SD2650] 2SD2650 | |
2sc3998 transistor
Abstract: 2SC3998 ITR06226 ITR06227 ITR06228 ITR06229 silicon transistor Vcbo 800 Vceo 1000 Ic 20A transistor 2SC3998 10A800
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2SC3998 EN2732A 100ns 2sc3998 transistor 2SC3998 ITR06226 ITR06227 ITR06228 ITR06229 silicon transistor Vcbo 800 Vceo 1000 Ic 20A transistor 2SC3998 10A800 | |
TA-3012
Abstract: 2SD2650
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ENN6781A 2SD2650 2SD2650] TA-3012 2SD2650 | |
2SC3998
Abstract: NPN Transistor 1500V 20a
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EN2732A 2SC3998 100ns 2SC3998 NPN Transistor 1500V 20a | |
Contextual Info: I Ordering number : ENN6653 NPN Triple Diffused Planar Silicon Transistor 2SC5683 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions High speed. High breakdown voltage VCBO= 1500V . High reliability(Adoption of HVP process). |
OCR Scan |
ENN6653 2SC5683 | |
2sc6091Contextual Info: 2SC6091 Ordering number : ENA0994 SANYO Semiconductors DATA SHEET 2SC6091 NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . Adoption of high reliability HVP process. |
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2SC6091 ENA0994 A0994-4/4 2sc6091 |