NPN PHOTOTRANSISTOR CLEAR PLASTIC Search Results
NPN PHOTOTRANSISTOR CLEAR PLASTIC Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TPCP8514 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet | ||
TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
TPCP8513 |
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NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 | Datasheet | ||
TTC5810 |
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NPN Bipolar Transistor / VCEO=50 V / IC=1 A / hFE=400~1000 / VCE(sat)=-0.12 V / tf=180 ns / PW-Mini | Datasheet | ||
TTC019 |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.21 V / tf=120 ns / PW-Mini | Datasheet |
NPN PHOTOTRANSISTOR CLEAR PLASTIC Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Infrared Phototransistor
Abstract: "infrared phototransistor" all datasheet phototransistor QEE213 QSE213C QSE214C
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QSE213C/QSE214C QSE213C/QSE214C QEE213 Infrared Phototransistor "infrared phototransistor" all datasheet phototransistor QEE213 QSE213C QSE214C | |
Contextual Info: BPW85 Vishay Semiconductors Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1 Ø 3 mm clear, plastic package. It is sensitive for visible and near infrared radiation. 20815 |
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BPW85 BPW85 2002/95/EC 2002/96/EC BPW85A BPW85B BPW85C | |
MID-14422Contextual Info: SIDE LOOK PACKAGE NPN PHOTOTRANSISTOR MID-14422 Description Package Dimensions Unit: mm inches The MID-14422 is a NPN silicon phototransistor mounted in a lensed ,water clear plastic and side looking package. 1.22 .048 4.12 (.162) 4.00 ± .08 (.158±.003) |
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MID-14422 MID-14422 30MIN 00MIN dimens01 | |
MID-33422Contextual Info: T-1 PACKAGE NPN PHOTOTRANSISTOR MID-33422 Package Dimensions Description The MID-33422 is a NPN silicon phototransistor moun- Unit: mm inches φ 3.00 (.118) nted in a lensed, water clear plastic package and 4.00 (.157) suitable for the variety wavelength. |
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MID-33422 MID-33422 | |
Contextual Info: BPW85 Vishay Semiconductors Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1 Ø 3 mm clear, plastic package. It is sensitive for visible and near infrared radiation. 20815 |
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BPW85 BPW85 2002/95/EC 2002/96/EC BPW85A BPW85B BPW85C | |
high resolution phototransistor
Abstract: phototransistor datasheet OPT6794 Phototransistor
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OPT6794 OPT6794 1000LUX 2000LUX high resolution phototransistor phototransistor datasheet Phototransistor | |
MID-30422
Abstract: MID-30A22
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MID-30422 MID-30422 40MIN 00MIN 25mmcm MID-30422/MID-30A22 MID-30A22 MID-30A22 | |
MID-57422Contextual Info: T-1 3/4 PACKAGE NPN PHOTOTRANSISTOR MID-57422 Package Dimensions Description The MID-57422 is a NPN silicon phototransistor mounted in a lensed , water clear plastic package to fit wide range of IR light source. Unit : mm inches ψ5.05 (.200) 5.47 (.215) |
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MID-57422 MID-57422 40MIN. 50TYP. 00MIN. | |
LTR-306
Abstract: LTE-306
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LTR-306 LTR-306 LTE-306 940nm | |
QEB363
Abstract: QEB373 QSB363 QSB363C Infrared Phototransistor
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QSB363C QSB363 QEB363 QEB373 QSB363C QEB373 Infrared Phototransistor | |
MID-18422Contextual Info: 1.8mm PACKAGE NPN PHOTOTRANSISTOR Description MID-18422 Package Dimensions The MID-18422 is a NPN silicon phototransistor mounted in a lensed , water clear plastic package.The lens- Unit : mm inches φ1.80 (.071) R 1.70 (.067) 2.40 (.094) ing effect of the package allows an acceptance view |
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MID-18422 MID-18422 40MIN. 00MIN. | |
Contextual Info: QSB363C Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a clear infrared T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24° |
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QSB363C QSB363 QEB363 QEB373 QSB363C | |
ic 4206
Abstract: LTR-4206 LTR 4206E LTR-4206E 4206E LTR4206E LTE-4206 ltr4206
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LTR-4206/LTR-4206E LTR-4206 LTE-4206 LTR-4206E LTR-4206 LTR-4206E 940nm ic 4206 LTR 4206E 4206E LTR4206E LTE-4206 ltr4206 | |
LTR-3208
Abstract: RL- 3208 A LTR-3208E LTE-3271T LTE-3371T LTR3208E ltr3208
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LTR-3208/LTR-3208E LTR-3208 LTE-3271T/ LTE-3371T LTR3208E LTR-3208 LTR-3208E 940nm RL- 3208 A LTR-3208E LTE-3271T ltr3208 | |
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Contextual Info: BPW96 Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1¾ ∅ 5 mm , clear, epoxy package. The device is sensitive to visible and near infrared radiation. |
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BPW96 BPW96 2002/95/EC 2002/96/EC BPW96B BPW96C 18-Jul-08 | |
MID-54422Contextual Info: T-1 3/4 PACKAGE NPN PHOTOTRANSISTOR Description MID-54422 Package Dimensions The MID-54422 is a NPN silicon phototransistor mounted ψ5.05 .200 Unit: mm ( inches ) in a lensed, water clear plastic package. The lensing effect of the package allows an acceptance view angle of 40o so |
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MID-54422 MID-54422 00MIN. | |
MID-32422Contextual Info: T-1 PACKAGE NPN PHOTOTRANSISTOR Description MID-32422 Package Dimensions The MID-32422 is a NPN silicon phototransistor mou- Unit : mm inches φ 3.50 ± 0.25 (.138 ± .010) nted in a lensed , water clear plastic package. The lens- φ 3.10 ± 0.20 (.122 ± .008) |
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MID-32422 MID-32422 | |
QEE213
Abstract: QSE243
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QSE243 QEE213 QSE243 QEE213 | |
LTR-301
Abstract: ltr 301 LTR-309 LTE-302 LTE-309 LTR301
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LTR-301/LTR-309 LTR-301 LTR-301/LTR-309 LTE-302/ LTE-309 LTR-309 940nm LTR-301 ltr 301 LTR-309 LTE-302 LTR301 | |
phototransistor blue light
Abstract: GB-PT224A21C GB-PT224A21DB GB-PT224 GB-PT224A21BT phototransistor 940nm
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GB-PT224 PT224 100mW -40oC -55oC 100oC 940nm phototransistor blue light GB-PT224A21C GB-PT224A21DB GB-PT224A21BT phototransistor 940nm | |
Phototransistor 5mm
Abstract: phototransistor blue light PT333 GB-PT333 GB-PT333A21BT GB-PT333A21C GB-PT333A21DB GB-PT333A22BT GB-PT333A22C GB-PT333A22DB
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GB-PT333 PT333 100mW -40oC -55oC 100oC 940nm Phototransistor 5mm phototransistor blue light GB-PT333A21BT GB-PT333A21C GB-PT333A21DB GB-PT333A22BT GB-PT333A22C GB-PT333A22DB | |
phototransistor blue light
Abstract: GB-PT333 GB-PT333A21BT GB-PT333A21C GB-PT333A21DB GB-PT333A22BT GB-PT333A22C GB-PT333A22DB GB-PT333B21BT GB-PT333B21C
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GB-PT333 PT333 100mW -40oC -55oC 100oC 940nm phototransistor blue light GB-PT333A21BT GB-PT333A21C GB-PT333A21DB GB-PT333A22BT GB-PT333A22C GB-PT333A22DB GB-PT333B21BT GB-PT333B21C | |
MID-11422Contextual Info: SIDE LOOK PACKAGE NPN PHOTODETECTOR MID-11422 Description Package Dimensions The MID-11422 is a NPN silicon phototransistor moun- Unit : mm inches 4.45±0.12 (.175±.005) ted in a lensed ,water clear plastic and side looking 2.22 (.087) package. 0.76 (.030) |
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MID-11422 MID-11422 | |
Contextual Info: .040" NPN Phototransistors VTT1212H, 1214H Clear T-1¾ 5 mm Plastic PackagE PACKAGE DIMENSIONS inch (mm) CASE 26 T-1 ¾ (5 mm) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high speed NPN silicon phototransistor possessing excellent sensitivity and good speed mounted |
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VTT1212H, 1214H VTE12xxH VTT1212H VTT1214H |