NPN EPITAXIAL PLANAR HIGH VOLTAGE TRANSISTOR Search Results

BSS59

Abstract: bss 97 transistor
Contextual Info: BSS59 Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: Verstärker und schnelle Schalter Applications: A m piifier and high speed switches Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage

3053 TRANSISTOR

Abstract: transistor 3053 2N3053
Contextual Info: Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: Allgem ein Applications: G eneral Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage • Hohe Strom verstärkung • High current gain

BC394

Contextual Info: BC394 EPITAXIAL PLANAR NPN • HIGH VOLTAGE AMPLIFIER DESCRIPTION The BC394 is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case, designed for general purpose high-voltage and video amplifier applications. TO-18 INTERNAL SCHEMATIC DIAGRAM

2n3700

Abstract: tfk 140
Contextual Info: Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: Allgem ein Applications: G eneral Features: Besondere Merkmale: • Hohe Sperrspannung • High reverse voltage • Hohe S trom verstärkung • High current gain

transistor b1

Abstract: hlb124 NPN Transistor 600V 1S1000 utchlb124
Contextual Info: UTC HLB124 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC HLB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. 1 FEATURES * High Speed Switching * Low Saturation Voltage

2N5770

Abstract: T0-92A T092A
Contextual Info: 2N5770 NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5770 is NPN silicon planar epitaxial transistor designed for small signal high frequency amplifiers and oscillators. I CASE T0-92A EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltiage

Contextual Info: UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR APPLICATIONS *HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS *COLOR TV HORIZ. DRIVER APPLICATIONS *COLOR TV CHROMA OUTPUT APPLICATIONS 1 FEATURES *High Voltage :V BR CEO= 300V

2SC2482

Abstract: common collector amplifier applications ce20v vc20e
Contextual Info: UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR APPLICATIONS *HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS *COLOR TV HORIZ. DRIVER APPLICATIONS *COLOR TV CHROMA OUTPUT APPLICATIONS 1 FEATURES *High Voltage :V BR CEO= 300V

BC394

Contextual Info: BC394 EPITAXIAL PLANAR NPN • HIGH VOLTAGE AMPLIFIER DESCRIPTION The BC394 is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case, designed for general purpose high-voltage and video amplifier applications. c u d TO-18 e t le s t o r

3440S

Abstract: 2N3440S hFE-10 G-2675
Contextual Info: 2N 3440S EPITAXIAL PLANAR NPN HIGH VOLTAGE AMPLIFIER The 2N 3440S is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case, intended for high voltage sw itching and linear am plifier applications. The complementary PNP type is the 2N 5415S. ABSOLUTE MAXIMUM RATINGS

2n3019

Abstract: tfk 140 3019 npn transistor 554 -1 transistor
Contextual Info: Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: A llgem ein und Verstärker Applications: G eneral and a m plifier Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage • Hohe S trom verstärkung

transistor BR 471 A

Abstract: be27 BF 471 Transistor A 471 CM 90-PS Scans-0010675
Contextual Info: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Video-B-Endstufen in Fernsehem pfängern Applications: Video-B-class pow er stages in TV receivers Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage

UBV45

Abstract: UBV45L-T92-B UBV45-T92-B UBV45-T92-K High voltage fast switching power transistor to92
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UBV45 NPN SILICON TRANSISTOR HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UBV45 NPN SILICON TRANSISTOR HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.

Contextual Info: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A APPLICATIONS 1 *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.

transistor w 431

Abstract: TRANSISTOR BC 431 TRANSISTOR 431 transistor 431 c 431 transistor a 431 transistor y 431 transistor transistor bc 488 bc 106 transistor w 431 transistor
Contextual Info: BC 431 'W Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar AF Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: • Hohe Sperrspannung Features: • High reverse voltage • Verlustleistung 6:25 mW

Contextual Info: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A APPLICATIONS 1 *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.

Contextual Info: UTC 2SD1060 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL PLANAR SILICON TRANSISTOR FEATURE *Low collector-to-emitter saturation voltage: VCE sat =0.4V max/IC=3A, IB=0.3A APPLICATIONS 1 *Suitable for relay drivers, high-speed inverter, converters, and other general large-current switching.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UBV45 NPN SILICON TRANSISTOR HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS „ DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13002AG Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS „ DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage

Contextual Info: SOP8501 SOP8501 Ordering number : ENN8007 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • • High breakdown voltage. VCEO≥400V Excellent hFE linearlity. Specifications

J055

Abstract: BSS26
Contextual Info: SILICON PLANAR NPN Bss 26 HIGH-VOLTAGE, HIGH-CURRENT SWITCH The B S S 26 is a silicon planar epitaxial NPN transistor in Jedec T O - 1 8 metal case. It is intended for high voltage, high current switching applications. ABSOLUTE MAXIMUM RATINGS VCBO VcES VcEO

2SA1784

Abstract: 2SC4644 ITR04653
Contextual Info: Ordering number:ENN3520 PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SA1784/2SC4644 High Voltage Driver Applications Features Package Dimensions • Adoption of MBIT process. · High breakdown voltage VCEO≥400V .

2SA1784

Abstract: 2SA1781
Contextual Info: Ordering number:EN3520 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA1784/2SC4644 High Voltage Driver Applications Features Package Dimensions • Adoption of MBIT process. · High breakdown voltage VCEO≥400V .