NPN 300V 2A TRANSISTOR Search Results

2SD2017

Abstract: FM20
Contextual Info: 2SD2017 Silicon NPN Triple Diffused Planar Transistor VCEO 250 V IEBO VEBO 20 V V BR CEO IC 6 A hFE VCE=2V, IC=2A 2000min Conditions Unit VCB=300V 100max µA VEB=20V 10max mA IC=25mA 250min 10.1±0.2 V IB 1 A VCE(sat) IC=2A, IB=2mA 1.5max PC 35(Tc=25°C) W

2SD2017

Abstract: FM20
Contextual Info: 2SD2017 Silicon NPN Triple Diffused Planar Transistor VCEO 250 V IEBO VEBO 20 V V BR CEO IC 6 A hFE VCE=2V, IC=2A 2000min Conditions Unit VCB=300V 100max µA VEB=20V 10max mA IC=25mA 250min 10.1±0.2 V IB 1 A VCE(sat) IC=2A, IB=2mA 1.5max PC 35(Tc=25°C) W

transistor tl 430 c

Contextual Info: , Unc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 BDY46 Silicon NPN Power Transistor usA DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 300V(Min.) • DC Current Gain: hFE=20(Min.)@lc = 2A • Collector-Emitter Saturation Voltage:V CE <sat)=1.5V(Max)@lc =

LB-008

Abstract: lc08a LB 125 transistor Triple Diffused
Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5338D/KSC5338DW HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION • • • • • Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

Contextual Info: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

Contextual Info: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5338D/KSC5338DW HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION * * * * * TO-220 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

Contextual Info: KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor • • • • • • High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

ZTX857

Abstract: 300V transistor npn 2a DSA003778
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX857 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. 810 950 mV IC=2A, VCE=5V* Static Forward Current Transfer Ratio

300V transistor npn 2a

Abstract: 2SC5305 2SC5305L
Contextual Info: UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications * Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications

2sc5305

Abstract: 2SC5305L
Contextual Info: UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications * Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications

NPN Transistor 10A 400V

Abstract: 2N5663 300V transistor npn 2a LE17
Contextual Info: SILICON POWER NPN TRANSISTOR 2N5663 • Fast Switching Transistor • Hermetic TO-5 Metal Package • Applications include High Speed Switching Circuits and Power Amplifiers • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

NTE385

Contextual Info: NTE385 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE385 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated

JANS2N2484

Abstract: JANS2N3439UA JANS2N3637 transistors SMD npn JANS2N5339U3 JANS2N7373
Contextual Info: JANS QUALIFIED BI-POLAR TRANSISTORS* Part # JANS QUALIFIED BI-POLAR TRANSISTORS* Type Voltage hFE @ Ic Rated Ic Package JANS QUALIFIED BI-POLAR TRANSISTORS* JANS QUALIFIED BI-POLAR TRANSISTORS* Part # Slash Sheet Type Voltage hFE @ Ic Rated Ic Package JANS2N930

MJE18008

Contextual Info: SavantIC Semiconductor Product Specification MJE18008 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ,high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts

MJF18008

Contextual Info: Product Specification www.jmnic.com Silicon NPN Power Transistors MJF18008 ・ DESCRIPTION ・With TO-220F package ・High voltage ,high speed ・Improved efficiency due to low base rive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS

MJE18008

Contextual Info: Product Specification www.jmnic.com Silicon NPN Power Transistors MJE18008 ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed ・Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS

MJF18008 equivalent

Abstract: MJF18008
Contextual Info: SavantIC Semiconductor Product Specification MJF18008 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High voltage ,high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts

BUV48

Abstract: BUV48A buv48 equivalent BUV48 Applications
Contextual Info: SavantIC Semiconductor Product Specification BUV48 BUV48A Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage ,high speed APPLICATIONS ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Deflection circuits PINNING See Fig.2

MJF18008

Abstract: MJF18008 equivalent
Contextual Info: Inchange Semiconductor Product Specification MJF18008 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220F package ・High voltage ,high speed APPLICATIONS ・Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts

MJE18008

Contextual Info: Inchange Semiconductor Product Specification MJE18008 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed APPLICATIONS ・Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts

300V transistor npn 2a

Abstract: 2N5240 voltage regulators 300v dc 300V series regulators 200V transistor npn 2a 300V regulator 2N5240 inchange
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N5240 DESCRIPTION •High Voltage: VCEO SUS = 300V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for use in series regulators, power amplifiers, inverters, deflection circuits, switching regulators, and

Contextual Info: KSC5305DF NPN Silicon Transistor Features Equivalent Circuit C • High Voltage High Speed Power Switch B Application • • • • TO-220F 1 1.Base 3.Emitter E Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications

QS 100 NPN Transistor

Abstract: KSC5305DF
Contextual Info: KSC5305DF NPN Silicon Transistor Features Equivalent Circuit C • High Voltage High Speed Power Switch B Application • • • • TO-220F 1 1.Base 3.Emitter E Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications