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    2SC5305 Search Results

    2SC5305 Datasheets (5)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SC5305
    		Sanyo Semiconductor Switching Transistors Original PDF 34.17KB 3
    2SC5305
    		Unisonic Technologies HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR Original PDF 159.22KB 4
    2SC5305
    		Unknown Japanese Transistor Cross References (2S) Scan PDF 33.39KB 1
    2SC5305LS
    		Sanyo Semiconductor NPN Triple Diffused Planar Silicon Transistor Original PDF 41.52KB 4
    2SC5305LS
    		Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 43.61KB 1

    2SC5305 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NPN Transistor 600V

    Abstract: NPN 600V transistor 2sc5305 transistor npn high speed switching 5A 600v NPN Transistor VCEO 1200V 1200v 3A
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5305 DESCRIPTION •High Breakdown Voltage :V BR CBO= 1200V (Min) ·High Speed Switching APPLICATIONS ·Designed for inverter lighting applications. Absolute maximum ratings (Ta=25℃)


    Original     		2sc5305npn transistor 600vnpn 600v transistortransistor npn high speed switching 5a 600v+2npn transistor vceo 1200v1200v 3a PDF

    TA1239

    Abstract: 2SC5305 2SC5305LS CP12A TA-1239
    Contextual Info: Ordering number:ENN5884A NPN Triple Diffused Planar Silicon Transistor 2SC5305LS Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1200V . · High reliability (Adoption of HVP process). · Adoption of MBIT process.


    Original     		enn5884a2sc5305ls2079d2sc5305+4o-220fita1239cp12ata-1239 PDF

    TA-1239

    Abstract: VCBO-1200V EN5884 2SC5305 TA1239
    Contextual Info: Ordering number:EN5884 NPN Triple Diffused Planar Silicon Transistor 2SC5305 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1200V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm


    Original     		en58842sc53052079bo-220fi+3ta-1239vcbo-1200vta1239 PDF

    300V transistor npn 2a

    Abstract: 2SC5305 2SC5305L
    Contextual Info: UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications * Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications


    Original     		2sc5305o-2202sc5305lqw-r203-028+1300v transistor npn 2a PDF

    2sc5305

    Abstract: 2SC5305L
    Contextual Info: UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications * Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications


    Original     		2sc5305o-220f2sc5305lqw-r219-003 PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		t258-omifax062sc1442sd466+12sc5266 PDF