NPN, TRANSISTOR, SC 103 B Search Results

mj15052

Abstract: mj-15052 CFL UPS 45 W circuit schematic diagram MJ15052 Motorola schematic diagram UPS ica MJ15003 internal diagram power supply tester schematic diagram pulse generator MC14001 AT330 transistor MJ11032
Contextual Info: O AN930 MOTOROLA Semiconductor Products Inc. Application Note HIGH VOLTAGE, HIGH CURRENT, NONDESTRUCTIVE FBSOA TESTING By Al Pshaenich This Application Note provides specifications form test instrumeAt whichcan be used to perform non-destructive testing of

sem 2106

Abstract: bux13
Contextual Info: I MOTORGLA SC X S T R S /R 12E D F I k 3 b7 2 S4 0 0 0 4 =52*1 3 | MOTOROLA SEM ICO N DUCTO R BUX13 TECHNICAL DATA 15 AMPERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high speed, high voltage, high power applications.

Contextual Info: Power Transistor Arrays PUB4311 PU4311 Silicon NPN/PNP planar type For power amplification Unit: mm • Features 25.3±0.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO ±60 V Collector-emitter voltage (Base open) VCEO ±60 V Emitter-base voltage (Collector open)

Contextual Info: b b 5 3 ci31 002S3bb 003 H A P X Philips Semiconductors Product specification b?E D N AMER PH ILI PS/ DI SC R ETE £ NPN 5 GHz wideband transistor FEATURES • BFT25A PINNING Low current consumption 100 p A - 1 mA • Low noise figure • Gold metallization ensures

Contextual Info: Power Transistor Arrays PUB4311 PU4311 Silicon NPN/PNP planar type For power amplification Unit: mm • Features 25.3±0.2 4.0±0.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO ±60 V Collector-emitter voltage (Base open) VCEO ±60 V Emitter-base voltage (Collector open)

Contextual Info: Power Transistor Arrays PUB4320 PU4320 Silicon NPN/PNP planar type darlington For power amplification Unit: mm • Features 25.3±0.2 4.0±0.2 9.5±0.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO ±60 V Collector-emitter voltage (Base open)

Contextual Info: Power Transistor Arrays PUB4320 PU4320 Silicon NPN/PNP planar type darlington For power amplification Unit: mm • Features 25.3±0.2 9.5±0.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO ±60 V Collector-emitter voltage (Base open) VCEO

3004x

Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
Contextual Info: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for

LM358 op amp

Abstract: BDV65A LM358 V48B28C250A Darlington NPN 250W
Contextual Info: Wide range trimming with variable loads By Arthur Jordan Sr. Application Engineer, Vicor TPB 103 The output of Vicor 2nd Generation DC-DC converter modules can be programmed from 10 to110% of their nominal output voltage. Trimming down is easily accomplished with a small low power resistor or

BDV55A

Abstract: LM358 op amp Lm358
Contextual Info: Wide range trimming with variable loads By Arthur Jordan Sr. Application Engineer, Vicor TPB 103 The output of Vicor 2nd Generation DC-DC converter modules can be programmed from 10 to110% of their nominal output voltage. Trimming down is easily accomplished with a small low power resistor or

Contextual Info: Power Transistor Arrays PUB4325 PU4325 Silicon NPN/PNP planar type darlington For power amplification Unit: mm • Features 25.3±0.2 ■ Absolute Maximum Ratings TC = 25°C NPN Rating Unit Collector-base voltage (Emitter open) VCBO 60±10 V Collector-emitter voltage

Contextual Info: Power Transistor Arrays PUB4325 PU4325 Silicon NPN/PNP planar type darlington For power amplification Unit: mm • Features 25.3±0.2 Rating Unit Collector-base voltage (Emitter open) VCBO 60±10 V Collector-emitter voltage (Base open) VCEO 60±10 V Emitter-base voltage

Contextual Info: Power Transistor Arrays PUB4117 PU4117 , PUB4417 (PU4417) Silicon NPN triple diffusion planar type For power amplification and switching Unit: mm • Features ■ Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage (Emitter open)

bf433

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68
Contextual Info: MOTOROLA SC XSTR S/R F MbE » • b3b?ES4 OQTSGS^ *1 I noTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Th« RF Line NPN Silico n RF Low Pow er Transistor 'European Part Number lc - 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz.

Contextual Info: Power Transistor Arrays PUA3110 PU3110 Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUA3210 (PU3210) Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

PU4118

Contextual Info: Power Transistor Arrays PUB4118 PU4118 Silicon NPN triple diffusion planar type For power amplification and switching Unit: mm • Features 25.3±0.2 9.5±0.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 200 V Collector-emitter voltage (Base open)

Contextual Info: Power Transistor Arrays PUB4118 PU4118 Silicon NPN triple diffusion planar type For power amplification and switching Unit: mm • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 200 V Collector-emitter voltage (Base open)

bc 303 transistor

Abstract: BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107 bc 107 npn transistor BC 108 transistor BC107 BC109
Contextual Info: * B C 107 * BC 108 BC 109 \IPN SILICON TRANSISTORS, EPITAXIAL PLANAR rRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX Jompl. of BC 177, BC 178, BC 179 îfc Preferred device Dispositif recommandé The NPN "plan epitaxial" transi ton BC 107, 3C 108 and BC 109 are intended for use in

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN5311DW1T1G Series The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network

BC327 BC337 noise figure

Abstract: BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 http://onsemi.com 6 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11

Contextual Info: Power Transistor Arrays PUA3119 PU3119 Silicon NPN triple diffusion planar type darlington For power amplification/switching Complementary to PUA3219 (PU3219) Unit: mm • Features ■ Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: Power Transistor Arrays PUA3120 PU3120 Silicon NPN triple diffusion planar type darlington For power amplification Complementary to PUA3220 (PU3220) Unit: mm 20.2±0.3 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

2N3906 Darlington transistor

Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11

Contextual Info: Power Transistor Arrays PUA3120 PU3120 Silicon NPN triple diffusion planar type darlington For power amplification Complementary to PUA3220 (PU3220) Unit: mm 20.2±0.3 • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60