NPN, TRANSISTOR, SC 103 B Search Results

mj15052

Abstract: mj-15052 CFL UPS 45 W circuit schematic diagram MJ15052 Motorola schematic diagram UPS ica MJ15003 internal diagram power supply tester schematic diagram pulse generator MC14001 AT330 transistor MJ11032
Contextual Info: O AN930 MOTOROLA Semiconductor Products Inc. Application Note HIGH VOLTAGE, HIGH CURRENT, NONDESTRUCTIVE FBSOA TESTING By Al Pshaenich This Application Note provides specifications form test instrumeAt whichcan be used to perform non-destructive testing of

sem 2106

Abstract: bux13
Contextual Info: I MOTORGLA SC X S T R S /R 12E D F I k 3 b7 2 S4 0 0 0 4 =52*1 3 | MOTOROLA SEM ICO N DUCTO R BUX13 TECHNICAL DATA 15 AMPERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high speed, high voltage, high power applications.

Contextual Info: Power Transistor Arrays PUB4311 PU4311 Silicon NPN/PNP planar type For power amplification Unit: mm • Features 25.3±0.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO ±60 V Collector-emitter voltage (Base open) VCEO ±60 V Emitter-base voltage (Collector open)

MRFQ17

Contextual Info: MOTOROLA SC XSTRS/R F L.3b7254 010DÖ34 IMOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor . . . designed for amplifier, oscillator or frequency multiplier applications in industrial equipment. Suitable fo r use as a Class A, B or C output driver or

Contextual Info: b b 5 3 ci31 002S3bb 003 H A P X Philips Semiconductors Product specification b?E D N AMER PH ILI PS/ DI SC R ETE £ NPN 5 GHz wideband transistor FEATURES • BFT25A PINNING Low current consumption 100 p A - 1 mA • Low noise figure • Gold metallization ensures

3,3v/5v/12V DC converter circuit diagram

Abstract: electronic power generator using transistor 12V ENERGY LIGHT CIRCUIT DIAGRAM an004 voltage references for block diagram of ct scanner 12V DC converter circuit diagram AIC1563 1N4148 1N5819 AN004
Contextual Info: AN004 Universal Step-Down DC/DC Converter Design Using AIC1563 Abstract driving signal to turn on or turn off on the power Voltage required in the modern electronic systems are single or multiple regulated voltages such as 3.3 V, 5V, 12V, -5V, or –12V, etc. It can be supplied

electronic power generator using transistor

Abstract: 3,3v/5v/12V DC converter circuit diagram AIC1563 12V DC converter circuit diagram 8v15 1N4148 1N5819 3V to 5V dc dc converter 5v to 30 v dc dc converter circuit diagram 55MF
Contextual Info: AN97-004 Universal Step-Down DC/DC Converter Design Using AIC1563 Ben Tai Abstract driving signal to turn on or turn off on the power Voltage required in the modern electronic systems are single or multiple regulated voltages such as 3.3 V, 5V, 12V, -5V, or –12V, etc. It can be supplied

Contextual Info: Power Transistor Arrays PUB4311 PU4311 Silicon NPN/PNP planar type For power amplification Unit: mm • Features 25.3±0.2 4.0±0.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO ±60 V Collector-emitter voltage (Base open) VCEO ±60 V Emitter-base voltage (Collector open)

Contextual Info: Power Transistor Arrays PUB4320 PU4320 Silicon NPN/PNP planar type darlington For power amplification Unit: mm • Features 25.3±0.2 4.0±0.2 9.5±0.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO ±60 V Collector-emitter voltage (Base open)

Contextual Info: Power Transistor Arrays PUB4320 PU4320 Silicon NPN/PNP planar type darlington For power amplification Unit: mm • Features 25.3±0.2 9.5±0.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO ±60 V Collector-emitter voltage (Base open) VCEO

3004x

Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
Contextual Info: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for

BD429

Abstract: D1069 Q62702-D1069 fcdc 2SC 102 bD 106 transistor
Contextual Info: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^ f’33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 4 2 9 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 3 0 it is particularly suitable for use in

LM358 op amp

Abstract: BDV65A LM358 V48B28C250A Darlington NPN 250W
Contextual Info: Wide range trimming with variable loads By Arthur Jordan Sr. Application Engineer, Vicor TPB 103 The output of Vicor 2nd Generation DC-DC converter modules can be programmed from 10 to110% of their nominal output voltage. Trimming down is easily accomplished with a small low power resistor or

BDV55A

Abstract: LM358 op amp Lm358
Contextual Info: Wide range trimming with variable loads By Arthur Jordan Sr. Application Engineer, Vicor TPB 103 The output of Vicor 2nd Generation DC-DC converter modules can be programmed from 10 to110% of their nominal output voltage. Trimming down is easily accomplished with a small low power resistor or

MRF671

Abstract: I505 part marking mwrc marking MBE sot-143 MRF5711L
Contextual Info: . { L ° R?LA SC X S TR S /R F MbE D M t 3 b 7 2 SM MOTOROLA 0 0 *1 5 0 5 5 1 •HOTb ' 7 ^ 3 f~ 2 .1 ■ SEMICONDUCTOR mmmmmmmmmmmmmammmammm TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor 'European Part Number . . . designed primarily for use in the high-gain, low-noise small-signal amplifiers

Contextual Info: Power Transistor Arrays PUB4325 PU4325 Silicon NPN/PNP planar type darlington For power amplification Unit: mm • Features 25.3±0.2 Rating Unit Collector-base voltage (Emitter open) VCBO 60±10 V Collector-emitter voltage (Base open) VCEO 60±10 V Emitter-base voltage

Contextual Info: Power Transistor Arrays PUB4117 PU4117 , PUB4417 (PU4417) Silicon NPN triple diffusion planar type For power amplification and switching Unit: mm • Features ■ Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage (Emitter open)

MJ340

Abstract: EM- 546 motor MJ3042
Contextual Info: MOTORCLA SC 12E D I b3fci7254 QG0MC17,1 7 | XSTRS/R F r-33^ 9 MOTOROLA SEMICONDUCTOR TECHNICAL DATA DARUNGTON 10 AMPERES POWER TRANSISTORS NPN SILICON HIGH VOLTAGE SILICON POWER DARUNGTONS . . . developed for line operated amplifier, series pass and switching

BFQ60

Abstract: BI10-M30T-AP6X Q62702-F655 bfq 85 Siemens Microwave S12PS2
Contextual Info: 2SC D m fl23Sb05 QQQ4b43 T H S I E G — *- — — • » « * w r i u u _ Low Noise NPN Silicon Microwave Transistor BFQ 60 up to 2 GHz_T ?sr. D '7 ^ 3 / - < 3 3 _ SIEMENS AKTIENGESELLSCHAF BFQ 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal

PU4311

Abstract: PUB4311
Contextual Info: Power Transistor Arrays PUB4311 PU4311 Silicon NPN/PNP planar type For power amplification Unit: mm M Di ain sc te on na tin nc ue e/ d • Features 25.3±0.2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

bf433

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68
Contextual Info: MOTOROLA SC XSTR S/R F MbE » • b3b?ES4 OQTSGS^ *1 I noTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Th« RF Line NPN Silico n RF Low Pow er Transistor 'European Part Number lc - 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz.

Contextual Info: Power Transistor Arrays PUA3111 PU3111 Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUA3211 (PU3211) Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector-base voltage (Emitter open) Rating

Contextual Info: Power Transistor Arrays PUA3110 PU3110 Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUA3210 (PU3210) Unit: mm • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

PU4320

Abstract: PUB4320
Contextual Info: Power Transistor Arrays PUB4320 PU4320 Silicon NPN/PNP planar type darlington For power amplification Unit: mm M Di ain sc te on na tin nc ue e/ d • Features 25.3±0.2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)