NOR FLASH QUALIFICATION Search Results

SAMSUNG MCP

Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Contextual Info: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)

EIA/JEDEC JESD22-A110-B

Abstract: JESD22-A117 JESD22 JESD22a117
Contextual Info: Reliability Study AMD MirrorBit RELIABILITY STUDY White Paper OVERVIEW The MirrorBit™ cell is a breakthrough in NOR Flash memory cell architecture that enables a Flash memory product to hold twice as much data as standard Flash, without compromising device endurance, performance

S72WS512PFFJF9GH

Abstract: BGA 15X15 BGA 130 MCP NAND DDR 12X12 POP PACKAGE TRAY 15x15 bta 137 S72WS512PFFKFKGH N-ADQ14 NAND01
Contextual Info: S72WS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode NOR Flash NAND Flash or NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 S72WS-P based MCP/PoP Products Cover Sheet Data Sheet Advance Information

BGA 130 MCP NAND DDR

Abstract: JEP95 137-Ball DSA00272754 Flash MCp nand DRAM 137-ball S72WS512PEF N-ADQ12 130 MCP NAND DDR NAND FLASH BGA Flash MCp nand DRAM 107-ball
Contextual Info: S72WS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode NOR Flash NAND Flash or NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 S72WS-P based MCP/PoP Products Cover Sheet Data Sheet Advance Information

KBB0XA300M

Abstract: transistor ba47 SAMSUNG MCP BA108 BA102 BA99 NAND FLASH BGA BGA34 BGA22 t402
Contextual Info: Preliminary MCP MEMORY KBB0xA300M - T402 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark October 15, 2002 Preliminary

SAMSUNG MCP

Abstract: KBB05A500 transistor BA29 BA102 NAND FLASH BGA transistor ba47 Pre-programming nand samsung UtRAM Density BA841 BGA-100
Contextual Info: KBB0xA500M - T402 MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft October 15, 2002

SAMSUNG MCP

Abstract: samsung toggle mode NAND ba7810 BA102 NAND FLASH BGA UtRAM Density BA5101 BA340 BGA-60
Contextual Info: SEC Only MCP MEMORY KAB0xD100M - TxGP Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft March 20, 2002

Microsemi

Contextual Info: W764M32V1-XBX *PRELIMINARY 64Mx32 NOR Flash Multi-Chip Package 3V Page Mode Memory FEATURES GENERAL DESCRIPTION  Single power supply operation The W764M32V1-XBX device is a 3V single power flash memory. The device utilizes two chips organized as 67,108,864 words. The

Contextual Info: 512Mb, 3V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 64KB, Sector Erase MT25QL512AB Features Options • Voltage – 2.7–3.6V • Density – 512Mb • Device stacking – Monolithic • Lithography – 45nm

Contextual Info: W764M32V1-XBX 64Mx32 NOR Flash Multi-Chip Package 3V Page Mode Memory FEATURES GENERAL DESCRIPTION  Single power supply operation The W764M32V1-XBX device is a 3V single power flash memory. The device utilizes two chips organized as 67,108,864 words. The

Contextual Info: 1Gb, 1.8V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 1.8V, Multiple I/O, 64KB Sector Erase MT25QU01GAB Features Options • Voltage – 1.7–2.0V • Density – 1Gb • Device stacking – Monolithic • Lithography – 45nm

MT25QU02

Abstract: 0/CRC64
Contextual Info: 2Gb, 1.8V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 1.8V, Multiple I/O, 64KB Sector Erase MT25QU02GAB Features Options • Voltage – 1.7–2.0V • Density – 2Gb • Device stacking – Monolithic • Lithography – 45nm

W764M32V1-XBX

Contextual Info: W764M32V1-XBX *PRELIMINARY 64Mx32 NOR Flash Multi-Chip Package 3V Page Mode Memory FEATURES GENERAL DESCRIPTION  Single power supply operation The W764M32V1-XBX device is a 3V single power flash memory. The device utilizes two chips organized as 67,108,864 words. The

MT25QU512

Contextual Info: 512Mb, 1.8V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 1.8V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase MT25QU512AB Features Options • Voltage – 1.7–2.0V • Density – 512Mb • Device stacking – Monolithic • Lithography

S30ML01GP

Abstract: S30ML512P S29PL127N S29PL-N S30ML-P S75PL127NBF S75PL-N S30ML01 tray matrix bga
Contextual Info: S75PL-N MirrorBit ORNAND™ MCPs Stacked Multi-Chip Product MCP S29PL-N: CMOS 3.0 Volt-only Simultaneous Read/Write, Page-mode Flash Memory (NOR Interface) S30ML-P: ORNAND Flash (NAND Interface) 3V pSRAM S75PL-N MirrorBit™ ORNAND™ MCPs Cover Sheet

MT25QL01

Contextual Info: 1Gb, 3V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase MT25QL01GB Features Options • Voltage – 2.7–3.6V • Density – 1Gb • Device stacking – Monolithic • Lithography – 45nm

Contextual Info: 2Gb, 3V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase MT25QL02GC Features Options • Voltage – 2.7–3.6V • Density – 1Gb • Device stacking – Monolithic • Lithography – 45nm

Contextual Info: W764M32V-XSBX Not Recommended for New Designs — Replaced by W764M32V1-XBX 64Mx32 NOR Flash Multi-Chip Package 3.0V Page Mode Flash Memory  Hardware features FEATURES  Single power supply operation • Advanced Sector Protection • WP#/ACC input accelerates programming time when

VFBGA 112-ball Pb free

Abstract: s29ns-n_00 S29NS-N S30MS-P S75NS128NBF S75NS128NBG S75NS-N MMB112-11
Contextual Info: S75NS-N S29NS-N: MirrorBit 1.8 Volt-only Simultaneous Read/ Write, Burst-mode Multiplexed Flash NOR Interface S30MS-P: ORNAND™ Flash (NAND interface) Multiplexed Synchronous pSRAM S75NS-N Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion

Contextual Info: Preliminary‡ 1Gb, 1.8V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 1.8V, Multiple I/O, 64KB Sector Erase MT25QU01GAB Features • • • • • • • • • • • • • • Erase capability – Bulk erase – Sector erase 64Kb uniform granularity

MT25QL02G

Abstract: MT25QL02GC
Contextual Info: Preliminary‡ 2Gb, 3V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase MT25QL02GC Features • • • • • • • • • • • • • • Erase capability – Bulk erase – Sector erase 64Kb uniform granularity

S30MS-P

Abstract: AMB128 S29WS-P S75WS256PEFJF5 S75WS256PEFKFF S75WS-P UtRAM Density Spansion NAND Flash DIE MS512P
Contextual Info: S75WS-P based MCP/POP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash NOR Interface S30MS-P (NAND Interface) ORNAND Flash pSRAM Type 2 S75WS-P based MCP/POP Products Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion

MT25QL01

Contextual Info: Preliminary‡ 1Gb, 3V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase MT25QL01GB Features • • • • • • • • • • • • • • Erase capability – Bulk erase – Sector erase 64Kb uniform granularity

Contextual Info: Preliminary‡ 512Mb, 3V Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase MT25QL512AB Features • • • • • • • • • • • • • • Erase capability – Bulk erase – Sector erase 64Kb uniform granularity