NOISE GATE COMPRESSION Search Results

NE33284AS

Abstract: NE33284A NE33284A-SL NE33284A-T1 MODEL 536
Contextual Info: SUPER LOW NOISE HJ FET • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION Noise Figure, NF dB • HIGH ASSOCIATED GAIN:

NE33284A

Abstract: NE33284AS NE33284A-SL NE33284A-T1
Contextual Info: SUPER LOW NOISE HJ FET • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION Noise Figure, NF dB • HIGH ASSOCIATED GAIN:

NE33284A

Abstract: NE33284A-SL NE33284AS
Contextual Info: SUPER LOW NOISE HJ FET NE33284A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 2 V, Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz <n • GATE LENGTH: 0.3 pm • GATE WIDTH: 280 pm

sn 7441

Contextual Info: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz <n • GATE LENGTH: 0.3 [im • GATE WIDTH: 280 urn

Relcom

Abstract: Siliconix Application Note U308 U309 U310
Contextual Info: . Perform ance Curves N Z A See Section 5 BENEFITS • Industry Standard • High Power Gain 16 dB at 105 MHz, Common-Gate 11 dB at 450 MHz, Common-Gate • Low Noise 2.7 dB Noise Figure at 450 MHz • Wide Dynamic Range Greater than 100 dB • 75 Q. Input Match Common Gate

MwT-471

Abstract: FET 5457 MwT-470
Contextual Info: MwT-4 26 GHz Low Noise GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns CHIP THICKNESS = 125 FEATURES 50 • 1.5 dB NOISE FIGURE AT 12 GHz • HIGH ASSOCIATED GAIN • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 180 MICRON GATE WIDTH

SSM2167-1RM-Reel

Abstract: RM-10 SSM2167 SSM2167-1 audio compression layer 2 low voltage Microphone Preamplifier
Contextual Info: a Low Voltage Microphone Preamplifier with Variable Compression and Noise Gating SSM2167 FEATURES Complete Microphone Conditioner in a 10-Lead Package Single 3 V Operation Low Shutdown Current < 2 ␮A Adjustable Noise Gate Threshold Adjustable Compression Ratio

low voltage Microphone Preamplifier

Abstract: SSM2167
Contextual Info: a Low Voltage Microphone Preamplifier with Variable Compression and Noise Gating SSM2167 FEATURES Complete Microphone Conditioner in a 10-Lead Package Single 3 V Operation Low Shutdown Current < 2 ␮A Adjustable Noise Gate Threshold Adjustable Compression Ratio

low voltage Microphone Preamplifier

Abstract: SSM2167-1 MO-187BA RM-10 SSM2167 SSM2167-1RM-R2 SSM2167-EVAL
Contextual Info: a Low Voltage Microphone Preamplifier with Variable Compression and Noise Gating SSM2167 FEATURES Complete Microphone Conditioner in a 10-Lead Package Single 3 V Operation Low Shutdown Current < 2 ␮A Adjustable Noise Gate Threshold Adjustable Compression Ratio

Contextual Info: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to

AD1845

Abstract: automatic volume control of headphones noise gate DBU-1
Contextual Info: a Microphone Preamplifier with Variable Compression and Noise Gating SSM2165 FEATURES Complete Microphone Conditioner in an 8-Lead Package Single +5 V Operation Preset Noise Gate Threshold Compression Ratio Set by External Resistor Automatic Limiting Feature Prevents ADC Overload

GM 90 562 573

Abstract: NE33200 NE33200M NE33200N
Contextual Info: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to

low voltage Microphone Preamplifier

Abstract: Microphone Preamplifier with Compression "Microphone Preamplifier" SSM2167 SSM2167-1 dj rm SSM2167-1RM-Reel noise gate micro preamplifier 10pin "Microphone Preamplifiers"
Contextual Info: PRELIMINARY TECHNICAL DATA a Low Voltage Microphone Preamplifier with Variable Compression & Noise Gating SSM2167 Preliminary Technical Data FEATURES Complete Microphone Conditioner in a 10-Pin Package Single +3 V Operation Low Shutdown Current < 50 µA Preset Noise Gate Threshold

SSM2167-1RMZ-R7

Abstract: low voltage Microphone Preamplifier
Contextual Info: FEATURES PIN CONFIGURATION Complete microphone conditioner in a 10-lead package Single 3 V operation Low shutdown current < 2 µA Adjustable noise gate threshold Adjustable compression ratio Automatic limiting feature prevents ADC overload Low noise and distortion: 0.2% THD + N

Contextual Info: ANALO G D E V IC E S Microphone Preamplifier with Variable Compression and Noise Gating SSM2166* FEATURES Com plete M icrophone Conditioner in a 14-Lead Package Single +5 V Operation Adjustable Noise Gate Threshold Compression Ratio Set by External Resistor

SSM2166A

Contextual Info: A N A LO G D E V IC E S Microphone Preamplifier with Variable Compression & Noise Gating SSM2166* FEATURES Complete Microphone Conditioner in a 14-Pin Package Single +5 V Operation Adjustable Noise Gate Threshold Compression Ratio Set by External Resistor

Contextual Info: MwT-S7 u s M ic r o w a v e 18 GHz High Gain, Low Noise GaAs FET a techno lo gy àk • HIGH AVAILABLE GAIN WHEN BIASED FOR LOW-NOISE • EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR BUFFER APPUCATIONS • 0.3 MICRON REFRACTORY METAL7GOLD GATE • 250 MICRON GATE WIDTH

C10535E

Abstract: NE713 NE71300 NE71300-L NE71300-M NE71300-N NE71383B
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm ORDERING INFORMATION

SSM2166P

Abstract: AD1845 guitar preamp phono preamplifier circuit diagram -riaa guitar amplifiers SSM2166 AD1847 OP113 SSM2165 SSM2166S
Contextual Info: a Microphone Preamplifier with Variable Compression & Noise Gating SSM2166* 20 dB; this gain is in addition to the variable gain in other compression settings. The input buffer can also be configured for frontend gains of 0 dB to 20 dB. A downward expander noise gate

IGD 507 an

Abstract: MWT-470LN F42 equivalent
Contextual Info: MwT - 4 26 GHz Low Noise GaAs FET MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 F A X 510-651-2208 FEATURES • 1.5 dB NOISE FIGURE AT 12 GHZ • HIGH ASSOCIATED GAIN •0.3 MICRON REFRACTORY METAL/GOLD GATE • 180 MICRON GATE WIDTH • CHOICE OF CHIP AND TWO PACKAGE TYPES

phono preamplifier circuit diagram -riaa

Abstract: phono preamplifier circuit diagram Microphone Preamplifier with Compression pin details of 10K preset potentiometer 3 pin preset resistor 10k preamp guitar effect balanced microphone schematic SSM2166 electret mic terminals high power fet audio amplifier schematic
Contextual Info: a Microphone Preamplifier with Variable Compression & Noise Gating SSM2166* 20 dB; this gain is in addition to the variable gain in other compression settings. The input buffer can also be configured for frontend gains of 0 dB to 20 dB. A downward expander noise gate

NEC D 809 F

Abstract: NEC D 809 71383B NEC D 809 k
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. at f = 4 GHz • High associated gain Ga = 14 dB TYP. a t f = 4 G H z • Gate width: Wg = 280 fim • Gate Length: Lg = 0.3 /xm

EPB025A

Abstract: Low Noise High Gain
Contextual Info: EPB025A Low Noise High Gain Heterojunction Power FET FEATURES • • • • • 420 50 TYPICAL 0.8dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES SUPER LOW NOISE, HIGH GAIN,

LP7512

Abstract: MIL-HDBK-263 AlGaAs resistivity
Contextual Info: Filtronic LP7512 Ultra Low Noise PHEMT Solid State DRAIN BOND PADS x2 FEATURES • • • • 0.6 dB Typical Noise Figure at 12 GHz 12.0 dB Typical Associated Gain at 12 GHz Low DC Power Consumption Excellent Phase Noise GATE BOND PADS (x2) SOURCE BOND