NOISE GATE COMPRESSION Search Results

NE33284AS

Abstract: NE33284A NE33284A-SL NE33284A-T1 MODEL 536
Contextual Info: SUPER LOW NOISE HJ FET • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION Noise Figure, NF dB • HIGH ASSOCIATED GAIN:

NE33284A

Abstract: NE33284AS NE33284A-SL NE33284A-T1
Contextual Info: SUPER LOW NOISE HJ FET • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION Noise Figure, NF dB • HIGH ASSOCIATED GAIN:

NE33284A

Abstract: NE33284A-SL NE33284AS
Contextual Info: SUPER LOW NOISE HJ FET NE33284A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 2 V, Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz <n • GATE LENGTH: 0.3 pm • GATE WIDTH: 280 pm

sn 7441

Contextual Info: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz <n • GATE LENGTH: 0.3 [im • GATE WIDTH: 280 urn

U430

Abstract: dlna circuit U308 U308-10 U309 U310 U311 Siliconix Application Note AN712 Siliconix JFETs Dual u430
Contextual Info: . Performance Curves NZA See Section 5 BENEFITS • Industry Standard • High Power Gain 16 dB at 105 MHz, Common-Gate 11 dB at 450 MHz, Common-Gate • Low Noise 2.7 dB Noise Figure at 450 MHz • Wide Dynamic Range Greater than 100 dB • 75 Q. Input Match Common Gate

sn 7441

Contextual Info: NEC SUPER LOW NOISE HJ FET FEATURES_ NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: V ds = 2 V, Ids = 10 m A 0 75 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz • GATE LENGTH: 0.3 nm • GATE WIDTH: 280 |j.m

Contextual Info: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSO CIATED GAIN vs. FREQ UENCY V ds = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz • HIGH ASS O C IA TED GAIN: 10.5 dB Typical at 12 GHz • GATE LENGTH: 0.3 |im • GATE W ID TH : 280 nm

Relcom

Abstract: Siliconix Application Note U308 U309 U310
Contextual Info: . Perform ance Curves N Z A See Section 5 BENEFITS • Industry Standard • High Power Gain 16 dB at 105 MHz, Common-Gate 11 dB at 450 MHz, Common-Gate • Low Noise 2.7 dB Noise Figure at 450 MHz • Wide Dynamic Range Greater than 100 dB • 75 Q. Input Match Common Gate

NE33284A-SL

Abstract: NE33284AS
Contextual Info: SUPER LOW NOISE HJ FET NE33284A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, Ids s 10 m A FEATURES VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz m GATE LENGTH: 0.3 urn *o GATE WIDTH: 280 c LOW COST METAL/CERAMIC PACKAGE

MwT-471

Abstract: FET 5457 MwT-470
Contextual Info: MwT-4 26 GHz Low Noise GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns CHIP THICKNESS = 125 FEATURES 50 • 1.5 dB NOISE FIGURE AT 12 GHz • HIGH ASSOCIATED GAIN • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 180 MICRON GATE WIDTH

NE24283B

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE24283B SPACE QUALIFIED FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • HIGH ASSOCIATED GAIN: 11.0 dB TYP at 12 GHz • GATE LENGTH: 0.25 µm • GATE WIDTH: 200 µm • HERMETIC METAL/CERAMIC PACKAGE

SSM2167-1RM-Reel

Abstract: RM-10 SSM2167 SSM2167-1 audio compression layer 2 low voltage Microphone Preamplifier
Contextual Info: a Low Voltage Microphone Preamplifier with Variable Compression and Noise Gating SSM2167 FEATURES Complete Microphone Conditioner in a 10-Lead Package Single 3 V Operation Low Shutdown Current < 2 ␮A Adjustable Noise Gate Threshold Adjustable Compression Ratio

low voltage Microphone Preamplifier

Abstract: SSM2167
Contextual Info: a Low Voltage Microphone Preamplifier with Variable Compression and Noise Gating SSM2167 FEATURES Complete Microphone Conditioner in a 10-Lead Package Single 3 V Operation Low Shutdown Current < 2 ␮A Adjustable Noise Gate Threshold Adjustable Compression Ratio

low voltage Microphone Preamplifier

Abstract: SSM2167-1 MO-187BA RM-10 SSM2167 SSM2167-1RM-R2 SSM2167-EVAL
Contextual Info: a Low Voltage Microphone Preamplifier with Variable Compression and Noise Gating SSM2167 FEATURES Complete Microphone Conditioner in a 10-Lead Package Single 3 V Operation Low Shutdown Current < 2 ␮A Adjustable Noise Gate Threshold Adjustable Compression Ratio

Contextual Info: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to

Contextual Info: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to

AD1845

Abstract: automatic volume control of headphones noise gate DBU-1
Contextual Info: a Microphone Preamplifier with Variable Compression and Noise Gating SSM2165 FEATURES Complete Microphone Conditioner in an 8-Lead Package Single +5 V Operation Preset Noise Gate Threshold Compression Ratio Set by External Resistor Automatic Limiting Feature Prevents ADC Overload

GM 90 562 573

Abstract: NE33200 NE33200M NE33200N
Contextual Info: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to

NE33200

Abstract: NE33200M NE33200N
Contextual Info: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to

low voltage Microphone Preamplifier

Abstract: Microphone Preamplifier with Compression "Microphone Preamplifier" SSM2167 SSM2167-1 dj rm SSM2167-1RM-Reel noise gate micro preamplifier 10pin "Microphone Preamplifiers"
Contextual Info: PRELIMINARY TECHNICAL DATA a Low Voltage Microphone Preamplifier with Variable Compression & Noise Gating SSM2167 Preliminary Technical Data FEATURES Complete Microphone Conditioner in a 10-Pin Package Single +3 V Operation Low Shutdown Current < 50 µA Preset Noise Gate Threshold

Microphone Preamplifier with Compression

Abstract: AD1845 AD1847 dbu-100 preamp guitar SSM2165 SSM2165-1 SSM2165-1P SSM2165-1S SSM2165-2P
Contextual Info: a Microphone Preamplifier with Variable Compression and Noise Gating SSM2165* FEATURES Complete Microphone Conditioner in an 8-Lead Package Single +5 V Operation Preset Noise Gate Threshold Compression Ratio Set by External Resistor Automatic Limiting Feature Prevents ADC Overload

SSM2167-1RMZ-R7

Abstract: low voltage Microphone Preamplifier
Contextual Info: FEATURES PIN CONFIGURATION Complete microphone conditioner in a 10-lead package Single 3 V operation Low shutdown current < 2 µA Adjustable noise gate threshold Adjustable compression ratio Automatic limiting feature prevents ADC overload Low noise and distortion: 0.2% THD + N

Contextual Info: PIN CONFIGURATION FEATURES Complete microphone conditioner in a 10-lead package Single 3 V operation Low shutdown current < 2 µA Adjustable noise gate threshold Adjustable compression ratio Automatic limiting feature prevents ADC overload Low noise and distortion: 0.2% THD + N

NE23300

Contextual Info: SUPER LOW NOISE HJ FET SPACE QUALIFIED FEATURES NE23300 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE23300 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to