NOISE GATE Search Results

TGF1350

Contextual Info: Texas Instruments TGF1350 Low-Noise Microwave GaAs FET Features • 1.5-dB noise figure with 11 -dB associated gain at 10 GHz ■ 2.2-dB noise figure with 7-dB associated gain at 18 GHz ■ All-gold metallization ■ Recessed 1/2-^m gate structure ■ Si3N4 channel passivation

Contextual Info: THS3120 THS3121 www.ti.com SLOS420B – SEPTEMBER 2003 – REVISED FEBRUARY 2006 LOW-NOISE, HIGH-OUTPUT DRIVE, CURRENT-FEEDBACK, OPERATIONAL AMPLIFIERS FEATURES • • • • • • DESCRIPTION Low Noise – 1 pA/√Hz Noninverting Current Noise – 10 pA/√Hz Inverting Current Noise

ATF-13736

Abstract: DB1415 ATF-13736-STR ATF-13736-TR1 ATF13736
Contextual Info: 2–16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736 Features Description • Low Noise Figure: 1.8 dB Typical at 12 GHz The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective

Contextual Info: FS8832<Preliminary> 150 mA Low Noise LDO Linear Regulator General Description The FS8832 is a low-noise, low-dropout linear regulator that operates from 2.5V to 6.5V input voltage range and delivers up to 150mA output current. Typical output noise for the device is just

NE429M01

Abstract: NE429M01-T1
Contextual Info: PRELIMINARY DATA SHEET NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES LOW NOISE FIGURE & HIGH ASSOCIATED GAIN: NF = 0.9 dB TYP, GA = 10 dB TYP at f = 12 GHz • 6 PIN SUPER MINIMOLD PACKAGE

Contextual Info: T O SH IB A 2SK2497 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2497 SHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure : NF = 1.2dB f=12GHz • High Gain Unit in mm 2.16 ± 0.2 1.1 1.1 : Ga = 10dB (f=12GHz)

NE76084-T1

Abstract: NE76083A NE76084S 4439 gm
Contextual Info: LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz 4 • HIGH ASSOCIATED GAIN GA = 9 dB TYP at f = 12 GHz • ION IMPLANTATION • AVAILABLE IN TAPE & REEL

sm 0038

Abstract: sm 0038 data sheet sm 0038 datasheet 84-1LMI NN12
Contextual Info: P35-5113-000-200 HEMT MMIC LNA 20 - 32GHz Features • • • Typical 2.1dB Noise Figure @24GHz &28GHz Self Biased Design 2.36 x 0.94mm Die Size Description The P35-5113-000-200 is a 20-32GHz Gallium Arsenide Self-Biased low noise amplifier. This product is intended

AM50-0006

Abstract: AM50-0006PCS AM50-0006PDC AM50-0006TR DCS-1800 PDC1500 L2 sot26
Contextual Info: an AMP company Low Noise Amplifier 1400 - 2000 MHz AM50-0006 Features • • • • • • V2.00 SOT-26 Low Noise Figure: 1.6 dB High Input IP3: -6 dBm at 3 V, 6.5 mA bias High Gain: 18 dB Single Supply: +3 to +8 VDC Low Cost SOT-26 Miniature Plastic Package

Contextual Info: TOSHIBA 3SK291 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK291 TV TUNER, UHF RF AMPLIFIER APPLICATIONS : • Superior Cross Modulation Performance • Low Reverse Transfer Capacitance : Crss = 0.016pF Typ. • Low Noise Figure

Contextual Info: SN54HC132, SN74HC132 QUADRUPLE POSITIVE-NAND GATES WITH SCHMITT-TRIGGER INPUTS SCLS034B - DECEMBER 1982 - REVISED JANUARY 1996 • • • • • Operation From Very Slow Input Transitions Temperature-Compensated Threshold Levels High Noise Immunity Same Pinouts as ’HCOO

Contextual Info: 54ACT11002,74ACT11002 QUADRUPLE 2-INPUT POSITIVE-NOR GATES SCAS003A - D2957, JUNE 1987 - REVISED APRIL 1993 Inputs Are TTL-Voltage Compatible Flow-Through Architecture to Optimize PCB Layout Center-PIn V^c and GND Configurations Minimize High-Speed Switching Noise

D2957

Abstract: 1987-REVISEDAPRIL
Contextual Info: 54ACT11030,74ACT11030 8-INPUT POSITIVE-NAND GATES _ D2957. MARCH 1987-REVISEDAPRIL 1993 Inputs Are TTL*Voltage Compatible Flow-Through Architecture Optimizes PCB Layout Center-PIn V^c and GNO Configurations Minimize High-Speed Switching Noise EPIC Enhanced-Perlormance Implanted

Contextual Info: 54AC11002, 74AC11002 QUADRUPLE 2-INPUT POSITIVE-NOR GATES D2957, JUNE 1987 - REVISED APRIL 1993 54AC11002 . . . J PACKAGE 74AC11002 . . . D OR N PACKAGE TOP VIEW Flow-Through Architecture Optimizes PCB Layout Center-Pin Vcc and GND Configuration Minimizes High-Speed Switching Noise

2sk112

Contextual Info: 9-97 E4 IFN112 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • LOW NOISE, HIGH GAIN • Equivalent to Japanese 2SK112 Absolute maximum ratings at TA= 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 50 V Continuous Forward Gate Current 10 mA

l20pF

Contextual Info: TOSHIBA 3SK249 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK249 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. 2. 1+0. 1 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : Crss = 20fF Typ. • Low Noise Figure.

Contextual Info: LM49153 www.ti.com SNAS496B – JANUARY 2011 – REVISED APRIL 2011 LM49153 Boomer Mono Audio Subsystem with Class G Headphone Amplifier, Class D Speaker Amplifier, Noise Gate and Speaker Protection Check for Samples: LM49153 FEATURES DESCRIPTION • The LM49153 is a fully integrated audio subsystem

Contextual Info: TOSHIBA TC74AC86 Quad Exclusive OR Gate Features: • High Speed: tpd = 4.4ns typ. at Vcc = 5V • Low Power Dissipation: lcc = 4(iA (max.) at Ta = 25°C • High Noise Immunity: V NH = V NIL = 2 8% V cc (min.) • Symmetrical Output Impedance: ll0Hl = l0i = 24mA

Contextual Info: B 31 9 -9 7 IF 1 3 3 0 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • LOW NOISE, HIGH GAIN AMPLIFIER Absolute maximum ratings at T* = 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 20 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation

IF4500

Contextual Info: B 36 9 -9 7 IF4500 N -C H A N N E L SILICO N JUNCTION FIELD-EFFECT TRANSISTOR LOW NOISE, HIGH GAIN AMPLIFIER Absolute maximum ratings at TA = 25‘ C Reverse Gate Source & Reverse Gate Drain Voltage - 20 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation

Contextual Info: CD74AC10 TRIPLE 3-INPUT POSITIVE-NAND GATES SCHS317 – NOVEMBER 2002 D D D D D D E OR M PACKAGE TOP VIEW AC Types Feature 1.5-V to 5.5-V Operation and Balanced Noise Immunity at 30% of the Supply Voltage Speed of Bipolar F, AS, and S, With Significantly Reduced Power Consumption

balun transformer 75 ohm

Abstract: 300 ohms balun b 595 transistor CRC10 UF281OOH
Contextual Info: RF MOSFET Power Transistor, iOOW, 28V 100 - 500 MHz UF281 OOH Features N-Channel Enhancement DMOS Structure Lower Capacitances Mode Device for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices Input Capacitance c IS

54AC11181

Abstract: TI018
Contextual Info: 54AC11181, 74AC11181 ARITHMETIC LOGIC UNITS/FUNCTION GENERATORS T I0184— D 3119, APRIL 1989— REVISED MARCH 1990 Flow-Through Architecture to Optimize PCB Layout 54AC11181 . . . JT PACKAGE 74AC11181 . . . DW OR NT PACKAGE TOP VIEW Minimize High-Speed Switching Noise

celeritek LNA

Abstract: microwave transducer Tower Mounted Amplifiers Dual Band CDQ0303-QS-0G0T MCH185A101JK PB-CDQ0303-QS-00A0 PB-CDQ0303-QS-00B0 CDQ0303-QS CDQ0303-QS-0G00 Coil Craft 104
Contextual Info: 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier CDQ0303-QS May 2006 - Rev 24-May-06 Features Matched Pair of Transistors for Optimum Balanced Amplifier Design AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Gain: 25 dB @ 900 MHz