NODE Search Results

TAT7469

Abstract: RES_0402
Contextual Info: TAT7469 CATV 75 Ω pHEMT Dual RF Amplifier Applications • • • • Edge QAM gain stage MDU Output Distribution amplifiers Node Transimpedance Amplifier Product Features • • • • • SOIC-8 package Functional Block Diagram 75 Ω, 50 MHz to 1200 MHz Bandwidth

25CL64B-GA

Abstract: 25CL64BGA 25cl64 FM25CL64B-Ga
Contextual Info: AEC Q100 Grade 1 Compliant FM25CL64B – Automotive Temp. 64Kb FRAM Serial 3V Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 10 Trillion 1013 Read/Writes  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM28V100-TG

Abstract: FM28V100-TGTR tca 335 A
Contextual Info: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process

fm25v05-g

Abstract: FM25V05 fm25v05g
Contextual Info: FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

rg5H20

Abstract: fm25h20-g FM25H20-DG FM25H20-GTR FM25H20G
Contextual Info: Pre-Production FM25H20 2Mb Serial 3V F-RAM Memory Features 2M bit Ferroelectric Nonvolatile RAM • Organized as 256K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

vp485

Abstract: VP485 IC 65HVD485 SN65HVD485E application notes ADM485 application note
Contextual Info: SN65HVD485E DGK D P www.ti.com SLLS612C – JUNE 2004 – REVISED MARCH 2007 HALF-DUPLEX RS-485 TRANSCEIVER FEATURES • • • • • • • DESCRIPTION Bus-Pin ESD Protection Up to 15 kV 1/2 Unit Load–Up to 64 Nodes on a Bus Bus-Open-Failsafe Receiver

tja1080

Abstract: TJA1080A active suspension TJA1041 TJA1054 Steer-by-Wire
Contextual Info: FlexRay node and star transceiver TJA1080 A Robust communications for complete FlexRay architectures Building on the success of our TJA1080 – the world’s first silicon solution for the FlexRay electrical physical layer – NXP Semiconductors has enhanced its performance to create the

TJA1080A

Abstract: AEC-Q100 MO-150 SSOP16 TJA1081 guardian
Contextual Info: TJA1081 FlexRay node transceiver Rev. 01 — 15 April 2009 Preliminary data sheet 1. General description The TJA1081 is a FlexRay node transceiver that is fully compliant with the FlexRay electrical physical layer specification V2.1 Rev. A see Ref. 1 and partly complies with

Contextual Info: OPTO SIEM ENS MME D • ÖE3b32b DD OM b^ M S IE X h RP-12C Mask-Diffused GaAsP LED PART NO. 2680-7075 W '9? P -m e ta l a node D iffu sio n Barrier Epita xia l La y e r Substrate N -m e ta i (cathode) DESCRIPTION TYPICAL DEVICE PARAMETERS Siemens RP-12C is a mask-diffused GaAsP lightemitting diode. With a bright and uniform 655 nm

AP-700

Contextual Info: • Single Digit Displays Part Number Shape 0 5" l2.7mm 0 52"(13 2mm) fiSr jfiïJ 0.56"(14.2mm) jfml b i Emitting Color Emitting Material Wave Length (nm) Luminous Intensity IF=10mA (ucd) Min. Max. Common D H R 12A / DHR12C Red GaP 700 900 - 2200 A node / C athode

Contextual Info: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

MCF5222X

Contextual Info: ColdFire Embedded Controllers Specification Sheet MCF5222x Family MCF5222x Applications > ZigBee Control Nodes > 4-channel, 16-bit or 8-channel, 8-bit PWM generator > Security/Access Control Panels > Two periodic interrupt timers PITs for alarm and countdown timing

Contextual Info: SN65HVD30 – SN65HVD39 www.ti.com SLLS665C – SEPTEMBER 2005 – REVISED JULY 2006 3.3V FULL-DUPLEX RS-485 DRIVERS AND RECEIVERS FEATURES • • • • • • • • • • 1 1/8 Unit-Load Option Available (Up to 256 Nodes on the Bus) Bus-Pin ESD Protection Exceeds 15 kV HBM

k1404

Abstract: transistor k1404 remote control tx-2b TX-2B RX-2B rx 2b DML4 DML4 Calibration tx-2b equivalent RX-2B TX-2B RX-2B, TX-2B
Contextual Info: Preliminary Data Sheet November 2000 T9000 ISDN Network Termination Node NTN Device 1 Description • The T9000 is an ISDN network termination node device that is highly integrated and provides a lowcost solution to support the following: General-purpose I/O (GPIO) ports with interrupt

Contextual Info: 2 4 5 7 REVISIONS ISS r DESCRIPTION\RER REQUEST\DATE ZONE I C\l ' - • F 1 -0 1 RECOMMENDED CABLE STRIPPING D IM ’S E RECOMMENDED MOUNTING NODE D CABL ES : - -FERRULE R G - 1 79 L910 /2 2 LX 2 2 LX 2 LLEX 2 C R IM PIN G TO OLS C P/''LI 2 2 7 - 9 + 4 M 2 2 5 2 0 / 5- 01

Contextual Info: BIGG HR SIZL SING I L C O L O R L t D DI SPLAYS C h ip P a r t N> -1 Peak D ig it S iz e E', rn i 1 1 c d Cummon Common A node C athode B S -A F 0 1 R D B S -C F 0 1 R D B S -A F 0 5 R D B S -C F 0 5 R D B S -A F 0 5 R E B S -C F 0 5 R E B S -A F 0 2 R D

Contextual Info: m o le x FEATURES AND SPECIFICATIONS Network Size D eviceNet is a low-cost communications link to connect industrial devices such as lim it switches, photoelectric sensors, U p to 6 4 nodes Net work length Selectable end-to-end netw ork distance varies with speed

COL-12

Contextual Info: MULT] - C O L O R 5*7 D O T P a r t Ko. Digit C o lum n Common A node Si;e 1.20" H igh ; ! 1 ; Chip Column Co m m o n catnoue BM -10EG57M D E m itted o o o o o o o o o o o o o o Peak 635 45 100 30 150 1.9 2.5 8.0 G reen 568 30 100 30 150 2.1 25 9.0 O range

AD8429

Abstract: RFI filter schematic diagram 12v AD8235 AD8236 AD8428
Contextual Info: FEATURES Fixed gain of 2000 Access to internal nodes provides flexibility Low noise: 1.5 nV/√Hz input voltage noise High accuracy dc performance Gain drift: 5 ppm/°C Offset drift: 0.3 V/°C Gain accuracy: 0.05% CMRR: 140 dB min Excellent ac specifications

Contextual Info: HFM1200 Ethernet Receiver APPLICATION continued Resistor R a d j adjusts the SQ threshold upward. A 70 [jA current from this node to ground increases the threshold by 1 dB of optical power. R a d j ' s high side is at 4.3 V (nominal). The open collector output (PKT) indicates presence of a

TAT8858L1H

Contextual Info: TAT8858 Push-Pull CATV Hybrid RFIC Applications • • • • CATV Line Amplifiers CATV System Amplifiers Distribution Nodes Green Applications SOIC-16 Wide Package Product Features • • • • • • • Functional Block Diagram 75 Ω, 50 – 1000 MHz Bandwidth

RLDRAM

Abstract: content addressable memory low power ternary "Content Addressable Memory" ternary
Contextual Info: RLDRAM 2 Memory: Addressing Networking Memory Requirements ISSI’s RLDRAM 2 Memory is a reduced-latency DRAM that offers fast random access 20ns tRC , making RLDRAM ideal for communication applications ranging from access nodes to core routers. table applications. Additionally, RLDRAM’s large density

"Rectifier Tube"

Contextual Info: EL C1K GRID CONTROL RECTIFIER TUBE T A N T A L U M AN OD E AND X E N O N GAS F IL L IN G M ax im u m R a te d A node C u rre n t D -c . M e te r V a lu e -C o n tin u o u s A v erag in g T im e O sc illo g ra p h P eak -C o n tin u o u sly r e c u rr in g

thyratron

Abstract: Scans-0017384
Contextual Info: 2D2I In d u s tr ia l T y p e 4 MAX A TYPE 2D2I " 1 MINIATURE H OT C A T H O D E MCO II III GAS FILLED T H YR A T R O N R A T IN G S Heater V o l t a g e . Heater C u r r e n t . Cathode Heating Tim e . Peak Forward A node Voltage Peak Inverse Voltage