NMOS TRANSISTOR SYMBOL Search Results

Intel 2118

Abstract: MB811B-10 DIP-16P-M01
Contextual Info: MB8118-10 MB8118-12 FU JITSU M ICROELECTRONICS NMOS 16,384-BIT DYNAMIC RANDOM ACCESS MEMORY DESCRIPTION The MB8118 is fabricated using silicon-gate NMOS and Fujitsu’s ad­ vanced Double-Layer Polysilicon process. This process, coupled with single-transistor memory storage

Contextual Info: 7-Unit 400mA Darlington Transistor Array IR2C03/IR2C03N IR2C03/IR2C03N • Description 7-Unit 400mA Darlington Transistor Array Pin Connections The IR2C03/IR2C03N is a 7-circuit driver. It can be directly driven by NMOS LSI. IR2C03 IN i |T INz [T ■ INj U

7166 cmos

Abstract: ULN2803 ULN2804 IC ULN2803 driver ULN2803 ULN2802 OF ULN2803 ULN2803 driver on uln2803 ULN2804A
Contextual Info: MOTOROLA ULN2803 ULN2804 Octal High Voltage, High Current Darlington Transistor Arrays The eight NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital circuitry such as TTL, CMOS or PMOS/NMOS and the higher current/voltage

R5528Z

Abstract: wireless charger
Contextual Info: R5528Z SERIES Overvoltage Protector IC with Reverse Current Protection NO.EA-313-130418 OUTLINE The R5528Z Series are CMOS-based overvoltage protector ICs with reverse current protection that use an NMOS pass transistor to achieve ultra-low on resistance Typ. 54mΩ . Overvoltage protection threshold is as

LDS124P

Abstract: sot23-3 LM1117 TRANSISTOR lm1084 LM1086 LM1084 LM1085 LM1117 free LM1117 LDS* leadis
Contextual Info: LDS124P Low Cost LDO Controller TO-92 and SOT-23 Package Preliminary Specification Revision 1.3 General Description The LDS124P is an LDO controller designed to drive an NMOS or NPN pass transistor to regulate output voltages from 1.24V to 12V. At the heart of the

ULN2803 driver

Abstract: ULN2803 uln2804 equivalent ULN2804A
Contextual Info: ULN2803 ULN2804 Octal High Voltage, High Current Darlington Transistor Arrays The eight NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital circuitry such as TTL, CMOS or PMOS/NMOS and the higher current/voltage

R5528Z001A-E2-F

Abstract: r5528z001 313130 R5528Z
Contextual Info: R5528Z SERIES OVERVOLTAGE PROTECTION SWITCH IC NO.EA-313-130218 OUTLINE The R5528Z Series are CMOS-based overvoltage protection switch ICs that use an NMOS pass transistor to achieve ultra-low on resistance Typ. 54mΩ . Overvoltage protection threshold is as high as 6.8V±3%. Also,

Contextual Info: R5528Z SERIES OVERVOLTAGE PROTECTION SWITCH IC NO.EA-313-130111 OUTLINE The R5528Z Series are CMOS-based overvoltage protection switch ICs that use an NMOS pass transistor to achieve ultra-low on resistance Typ. 54mΩ . Overvoltage protection threshold is as high as 6.8V±3%. Also,

R1202N723A

Abstract: R1202N R1202N713D
Contextual Info: R1202x SERIES STEP-UP DC/DC CONVERTER with SHUTDOWN FUNCTION NO.EA-255-120518 OUTLINE The R1202x Series are CMOS-based PWM step-up DC/DC converter ICs with low supply current. Each of these ICs consists of an NMOS FET, NPN transistor, an oscillator, a PWM comparator, a voltage

R1202N723A

Abstract: DFN1616-6B LQH32CN100K53 LQH32CN220K53 VLF3010A-100 VLF3010A-220 LQH2MC220K02 R1202N
Contextual Info: R1202x SERIES STEP-UP DC/DC CONVERTER with SHUTDOWN FUNCTION NO.EA-255-110404 OUTLINE The R1202x Series are CMOS-based PWM step-up DC/DC converter ICs with low supply current. Each of these ICs consists of an NMOS FET, NPN transistor, an oscillator, a PWM comparator, a voltage

ULN2803

Abstract: IC ULN2803 ULN2S03 LN2803 ULN2804 ULN2802 ULN2803 IC- CURRENT DRIVER 7166 cmos uln2804av ULN2804A
Contextual Info: MOTOROLA — — — — O ctal High Voltage, High Current Darlington Transistor Arrays The eight NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital circuitry such as TTL, CMOS or PMOS/NMOS and the higher current/voltage

R5528Z001A

Contextual Info: R5528Z SERIES Overvoltage Protector IC with Reverse Current Protection NO.EA-313-130513 OUTLINE The R5528Z001A is a CMOS-based overvoltage protector IC with reverse current protection that use an NMOS pass transistor to achieve ultra-low on resistance Typ. 54mΩ . Overvoltage protection threshold is as high as

Contextual Info: NCP120 150mA, Very Low Dropout Bias Rail CMOS Voltage Regulator The NCP120 is a 150 mA VLDO equipped with NMOS pass transistor and a separate bias supply voltage VBIAS . The device provides very stable, accurate output voltage with low noise suitable for space constrained, noise sensitive applications. In order to

Contextual Info: NCP133 500 mA, Very Low Dropout Bias Rail CMOS Voltage Regulator The NCP133 is a 500 mA VLDO equipped with NMOS pass transistor and a separate bias supply voltage VBIAS . The device provides very stable, accurate output voltage with low noise suitable for space constrained, noise sensitive applications. In order to

Contextual Info: R1 2 0 2 x SERI ES STEP-UP DC/DC CONVERTER with SHUTDOWN FUNCTION NO.EA-255-120518 OUTLINE The R1202x Series are CMOS-based PWM step-up DC/DC converter ICs with low supply current. Each of these ICs consists of an NMOS FET, NPN transistor, an oscillator, a PWM comparator, a voltage

Contextual Info: R5 5 2 8 Z SERI ES Overvoltage Protector IC with Reverse Current Protection NO.EA-313-130513 OUTLINE The R5528Z001A is a CMOS-based overvoltage protector IC with reverse current protection that use an NMOS pass transistor to achieve ultra-low on resistance Typ. 54mΩ . Overvoltage protection threshold is as high as

TRANSISTOR A1104

Abstract: transistor a1102 transistor a1106 SOT23W A1104 APPLICATION NOTE A1101LLHLT-T A1101-DS Hall sensor a1101 A1101LUA-T A1102
Contextual Info: A1101, A1102, A1103, A1104, and A1106 Continuous-Time Switch Family GND Package LH, 3-pin Surface Mount 3 1 3 The A1101-A1104 and A1106 Hall-effect switches include the following on a single silicon chip: voltage regulator, Hall-voltage generator, small-signal amplifier, Schmitt trigger, and NMOS output transistor. The integrated voltage regulator

74139 demultiplexer

Abstract: 74169 SYNCHRONOUS 4-BIT BINARY COUNTER pin diagram 41 multiplexer 74153 3-8 decoder 74138 pin diagram bcd counter using j-k flip flop diagram pin diagram priority decoder 74148 CI 74151 74181 74175 clock 74165 block diagram 74151 demultiplexer
Contextual Info: M OIVIOUOUU, s em i c onductor GENERAL DESCRIPTION FEATURES The OKI MSM60300, MSM60700. and MSM61000 gate arrays are fabricated using state-of-the-art 3/i dual-layer metal silicon gate CMOS technology. A unit cell consists of 4 pairs o f transistors where each pair is made up of a PMOS and a NMOS transistor.

AMG-Q05DM06AV

Abstract: JESD625-A 1378P AMGQ05DM06AV frankfurt
Contextual Info: AMG-Q05DM06AV N/P-MOS H-BRIDGE 1. Functional Description of the AMG-Q05DM06AV The AMG-Q05DM06AV is built by utilizing one of the latest state-of-the-art trench technologies to achieve ultra low resistance RDS on for the power MOSFETs. The complementary Hbridge consists of 2 PMOS/NMOS transistor pairs. Based on this trench-technology the input

lm317 smd L3

Abstract: LM317 voltage regulator BSN20 IC1 LM317 r60 mkt TDA8060 SP5659 c138 transistor 68c46 MKT 22K
Contextual Info: APPLICATION NOTE Measurements on TSA5059T/C1 and SP5659 regarding ripple voltage susceptibility AN99019 Philips Semiconductors Measurements on TSA5059T/C1 and SP5659 regarding ripple voltage susceptibility Application Note AN99019 Abstract This document describes the measurement results of susceptibility on ripple voltage injected on a DC supply

CB3Q3257

Abstract: igfet CB3T3306 CB3Q3306 CB3T CB3Q3306A SCDA008
Contextual Info: Application Report SCDA008 - July 2003 CBT-C, CB3T, and CB3Q Signal-Switch Families Christopher Graves, Moshiul Haque, and Ernest Cox Standard Linear & Logic ABSTRACT Signal-switch devices are used widely in applications requiring bus isolation, multiplexing,

CMOS

Abstract: MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model
Contextual Info: 0.18 µm CMOS Process XC018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular RF enabled CMOS Logic and Analog Technology 0.18-micron drawn gate length N-well process, modules are also available for metal-insulatormetal capacitors, high resistive poly, dual gate

acumos

Abstract: list of n channel fet A300 MF10 nmos pmos array n channel fet array
Contextual Info: A300 Analog/Digital Gate Array DESCRIPTION The Acumos A300 is a high performance analog/digital gate array. The gate array can perform analog and/or digital functions. The gate array is silicon gate construction using a double­ poly p-well process. The minimum gate channel

nmos pmos array

Abstract: mf10 A300 list of n channel fet Acumos n channel fet array
Contextual Info: A300 Analog/Digital Gate Array DESCRIPTION The Acumos A300 is a high performance analog/digital gate array. The gate array can perform analog and/or digital functions. The gate array is silicon gate construction using a double­ poly p-well process. The minimum gate channel