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Catalog Datasheet	Type	Document Tags	PDF
Intel 2118 Abstract: MB811B-10 DIP-16P-M01 Contextual Info: MB8118-10 MB8118-12 FU JITSU M ICROELECTRONICS NMOS 16,384-BIT DYNAMIC RANDOM ACCESS MEMORY DESCRIPTION The MB8118 is fabricated using silicon-gate NMOS and Fujitsu’s ad vanced Double-Layer Polysilicon process. This process, coupled with single-transistor memory storage	OCR Scan	384-bit mb8118 m88118 16-pin +6mb8118-10/mb8118-12 16-lead ip-16c-c03 dip-16p-m01 intel 2118 mb811b-10	PDF

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Intel 2118

Abstract: MB811B-10 DIP-16P-M01
Contextual Info: MB8118-10 MB8118-12 FU JITSU M ICROELECTRONICS NMOS 16,384-BIT DYNAMIC RANDOM ACCESS MEMORY DESCRIPTION The MB8118 is fabricated using silicon-gate NMOS and Fujitsu’s ad vanced Double-Layer Polysilicon process. This process, coupled with single-transistor memory storage

OCR Scan

384-bit mb8118 m88118 16-pin +6

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