NMOS MODEL PARAMETERS SPICE Search Results

NMOS MODEL PARAMETERS SPICE Result Highlights (5)

Part	Manufacturer	Description	Download
C8231A	Rochester Electronics LLC	C8231A - Math Coprocessor, 8-Bit, NMOS, CDIP24	PDF
8251A/BXA	Rochester Electronics LLC	8251 - Programmable Communication Interface, NMOS, CDIP28	PDF
C8231A-8	Rochester Electronics LLC	C8231A - Math Coprocessor, 8-Bit, NMOS, CDIP24	PDF
TPS6508700RSKR	Texas Instruments	PMIC for AMD™ family 17h models 10h-1Fh processors 64-VQFN -40 to 85
TPS6508700RSKT	Texas Instruments	PMIC for AMD™ family 17h models 10h-1Fh processors 64-VQFN -40 to 85

NMOS MODEL PARAMETERS SPICE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
74ACxxx Abstract: mj04 AN1403 RSH120 MJ-04 AD259 NMOS MODEL PARAMETERS SPICE xj25 Contextual Info: AN1403/D FACT I/O Model Kit Prepared by: Willard Tu http://onsemi.com APPLICATION NOTE OBJECTIVE Transistor Parameters for Typical FACT Output Buffers The objective of providing a spice modelling kit is to allow the customer to perform system level interconnect	Original	AN1403/D 1599U 375E-4 875E-3 74ACxxx mj04 AN1403 RSH120 MJ-04 AD259 NMOS MODEL PARAMETERS SPICE xj25	PDF
BUZ12 Abstract: SIPMOS application note depletion MOSFET SPICE n mosfet depletion note BUZ12AL BSP149 equivalent BUZ MOSFET kp1022 SIPMOS BUZ41A Contextual Info: Power Semiconductor Application Note AN_PSM1e SPICE Models for SIPMOS Components Purpose: Author: Clarification of SIPMOS - SPICE models V1.0 Dr. P. Türkes, Dr. M. März, P. Nance 1 Introduction Powerful new-generation personal computers with a fast main processor and a math-coprocessor	Original	compon99 BUZ12 SIPMOS application note depletion MOSFET SPICE n mosfet depletion note BUZ12AL BSP149 equivalent BUZ MOSFET kp1022 SIPMOS BUZ41A	PDF
BSP149 equivalent Abstract: DC chopper n mosfet depletion pspice model parameters BUZ MOSFET kp1022 BSP149 depletion mode mosfet 100 MHz NMOS depletion pspice model SIPMOS SPICE BSS SPICE Contextual Info: SPICE Models for SIPMOS Components Version: Purpose: Author: 3.1 Clarification of SIPMOS - SPICE models Dr. P. Türkes, Dr. M. März 1 Introduction Powerful new-generation personal computers with a fast main processor and a math-coprocessor allow circuit developers to benefit inexpensively from CAD methods, since such computers make it	Original		PDF
4e16 Abstract: 25e5 4E-16 Contextual Info: AND8050/D SPICE Device Model NTHS5402T1 N–Channel 2.5 V G–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS DESCRIPTION • • • • • • The attached SPICE Model describes typical electrical characteristics of the p–channel vertical DMOS. The	Original	AND8050/D NTHS5402T1 r14525 AND8050/D 4e16 25e5 4E-16	PDF
eta mos Abstract: 20E-3 1100E 135E NTHS5445T1 Si5445DC PMOS MODEL PARAMETERS SPICE 85e4 Contextual Info: AND8049/D SPICE Device Model NTHS5445T1 P–Channel 1.8 V G–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS • • • • • • DESCRIPTION The attached SPICE Model describes typical electrical characteristics of the p–channel vertical DMOS. The	Original	AND8049/D NTHS5445T1 r14525 eta mos 20E-3 1100E 135E NTHS5445T1 Si5445DC PMOS MODEL PARAMETERS SPICE 85e4	PDF
Kappa Networks Abstract: 200E NTHD5905T1 Si5905DC NMOS MODEL PARAMETERS SPICE Contextual Info: AND8048/D SPICE Device Model NTHD5905T1 Dual P–Channel 1.8 V G–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS DESCRIPTION • • • • • • The attached SPICE Model describes typical electrical characteristics of the p–channel vertical DMOS. The	Original	AND8048/D NTHD5905T1 r14525 Kappa Networks 200E NTHD5905T1 Si5905DC NMOS MODEL PARAMETERS SPICE	PDF
Kappa Networks Abstract: Si5445DC 1100E 135E Contextual Info: AND8049/D SPICE Device Model NTHS55445T1 P–Channel 1.8 V G–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS • • • • • • DESCRIPTION The attached SPICE Model describes typical electrical characteristics of the p–channel vertical DMOS. The	Original	AND8049/D NTHS55445T1 r14525 Kappa Networks Si5445DC 1100E 135E	PDF
25e5 Abstract: NMOS MODEL PARAMETERS SPICE 4e16 330E-12 Kappa Networks 330E Si5402DC 52E-3 Contextual Info: AND8050/D SPICE Device Model NTHS55445T1 N–Channel 2.5 V G–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS DESCRIPTION • • • • • • The attached SPICE Model describes typical electrical characteristics of the p–channel vertical DMOS. The	Original	AND8050/D NTHS55445T1 r14525 25e5 NMOS MODEL PARAMETERS SPICE 4e16 330E-12 Kappa Networks 330E Si5402DC 52E-3	PDF
Kappa Networks Abstract: 110E 7E17 NTHD5902T1 Si5902DC Contextual Info: AND8051/D SPICE Device Model NTHD5902T1 Dual N–Channel 30 V D–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS DESCRIPTION • • • • • • The attached SPICE Model describes typical electrical characteristics of the n–channel vertical DMOS. The	Original	AND8051/D NTHD5902T1 r14525 Kappa Networks 110E 7E17 NTHD5902T1 Si5902DC	PDF
Kappa Networks Abstract: 240E NTHD5904T1 Si5904DC PMOS MODEL PARAMETERS SPICE 65E-3 65e3 Contextual Info: AND8047/D SPICE Device Model NTHD5904T1 Dual N–Channel 2.5 V G–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS DESCRIPTION • • • • • • The attached SPICE Model describes typical electrical characteristics of the n–channel vertical DMOS. The	Original	AND8047/D NTHD5904T1 r14525 Kappa Networks 240E NTHD5904T1 Si5904DC PMOS MODEL PARAMETERS SPICE 65E-3 65e3	PDF
NMOS MODEL PARAMETERS SPICE Abstract: nmos transistor SPICE MODELS 03 transistor 03222 Contextual Info: SPICE Models  June 1995 Mitel Semiconductor has been using for several years SPICE parameters for internal IC Design. For Custom Silicon Wafer Foundry, we are now offering expanded services with State-of-the-Art Hardware and Software Data extraction. Available Models:	Original	980e-09 453e-07 178e-07 127e-10 233e-08 50e-03 793e-04 NMOS MODEL PARAMETERS SPICE nmos transistor SPICE MODELS 03 transistor 03222	PDF
spice model solid state relay Abstract: solid state relay spice model swhyste lambda schematic los-7-15 llc converter spice model NMOS MODEL PARAMETERS SPICE relay spice model Contextual Info: SPICE Device Model Si4768CY Vishay Siliconix Si4768CY N-Channel Synchronous MOSFETs SCOPE This document contains a description of the SPICE model and test and application circuits for the Vishay SI4768CY N-Channel Synchronous MOSFETs with Break-Before-Make.	Original	Si4768CY includ-May-04 12-May-04 spice model solid state relay solid state relay spice model swhyste lambda schematic los-7-15 llc converter spice model NMOS MODEL PARAMETERS SPICE relay spice model	PDF
swhyste Abstract: TC-165 mosfet 260n 254p AEI Semiconductors Si4768CY Si4770CY diode M7 156n diode NMOS MODEL PARAMETERS SPICE Contextual Info: SPICE Device Model Si4770CY Vishay Siliconix SI4770CY N-Channel Synchronous MOSFETs SCOPE This document contains a description of the SPICE model and test and application circuits for the Vishay SI4770CY N-channel Synchronous MOSFETs with Break-Before-Make.	Original	Si4770CY 18-Jul-08 swhyste TC-165 mosfet 260n 254p AEI Semiconductors Si4768CY diode M7 156n diode NMOS MODEL PARAMETERS SPICE	PDF
MITEL SEMICONDUCTOR Abstract: all transistor mitel st 9701 NMOS MODEL PARAMETERS SPICE Contextual Info: SPICE MODELS Mitel Semiconductor has been using for several years SPICE parameters for internal IC Design. For Custom Silicon Wafer Foundry, we are now offering expanded services with State-of -the Art Hardware and Software Data extraction Available Models:	Original	980e-09 453e-07 178e-07 127e-10 233e-ability MITEL SEMICONDUCTOR all transistor mitel st 9701 NMOS MODEL PARAMETERS SPICE	PDF

CMOS spice model Abstract: MOS RM3 Spice model inductor BSIM3v3.2 XH035 XH035 library w10 jfet mos rm3 data PMOS "X-Fab" Core cell library Contextual Info: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target	Original	XH035 XH035 35-micron CMOS spice model MOS RM3 Spice model inductor BSIM3v3.2 XH035 library w10 jfet mos rm3 data PMOS "X-Fab" Core cell library	PDF
mosfet SPICE MODEL Abstract: G2-20P Si4724CY 21E16 llc converter spice model diode M022 AN1043 NMOS MODEL PARAMETERS SPICE 650N M0-22 Contextual Info: SPICE Device Model Si4724CY Vishay Siliconix N-Channel Synchronous MOSFETs FUNCTIONAL DESCRIPTION The SI4724CY is a high speed driver designed to operate in high frequency dc-dc switchmode power supplies. It is designed to be used with any single output PWM IC or ASIC to produce a highly	Original	Si4724CY 545u/4u) AN1043, 23-Jan-04 mosfet SPICE MODEL G2-20P 21E16 llc converter spice model diode M022 AN1043 NMOS MODEL PARAMETERS SPICE 650N M0-22	PDF
bsim3 0.18 micron parameters Abstract: bsim3 model ESSDERC-98 Contextual Info: Impact of Process Scaling on 1/f Noise in Advanced CMOS Technologies MJ. Knitel, P.H. Woerlee, A.J. Schölten, and A.T.A. Zegers-Van Duijnhoven Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands phone: +31-40-2742723; fax: + 31-40-2743390; e-mail: andries.scholten@philips.com	OCR Scan	464-IEDM bsim3 0.18 micron parameters bsim3 model ESSDERC-98	PDF
XH035 Abstract: mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3 Contextual Info: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target	Original	XH035 XH035 35-micron mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3	PDF
CMOS Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion Contextual Info: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.	Original		PDF
CMOS Abstract: MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model Contextual Info: 0.18 µm CMOS Process XC018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular RF enabled CMOS Logic and Analog Technology 0.18-micron drawn gate length N-well process, modules are also available for metal-insulatormetal capacitors, high resistive poly, dual gate	Original	XC018 18-micron XC018 CMOS MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model	PDF
spice model Tunnel diode Abstract: dpsN TUNNEL DIODE spice model Contextual Info: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation	Original		PDF
CMOS Abstract: pmos4 Contextual Info: 0.8 µm CMOS Process CX08 MIXED-SIGNAL FOUNDRY EXPERTS 0.8 Micron Modular Mixed Signal Technology Description The CX08 Series is X-FAB‘s 0.8 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom designs for Industrial, Telecommunication and Automotive products - including the 42V board net.	Original		PDF
0.6 um cmos process Abstract: bsim3 Trench MOS Schottky Rectifier MICRON POWER RESISTOR Mos BSIM3 SOI pmos 60V-20 MICRON RESISTOR Mos MOS RM3 P-Channel Depletion Mosfets Contextual Info: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation	Original		PDF
XH018 Abstract: sonos MOS RM3 model values for 0.18 micron technology cmos 0.18 um CMOS parameters analog devices transistor tutorials CMOS spice model bsim3 0.18 micron parameters EPI EEPROM bsim3 circuit model Contextual Info: 0.18 µm CMOS Process Family XH018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular Mixed Signal HV CMOS Technology Description The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six	Original	XH018 XH018 18-micron sonos MOS RM3 model values for 0.18 micron technology cmos 0.18 um CMOS parameters analog devices transistor tutorials CMOS spice model bsim3 0.18 micron parameters EPI EEPROM bsim3 circuit model	PDF

NMOS MODEL PARAMETERS SPICE Search Results

NMOS MODEL PARAMETERS SPICE Result Highlights (5)

NMOS MODEL PARAMETERS SPICE Datasheets Context Search

74ACxxx

BUZ12

BSP149 equivalent

4e16

eta mos

Kappa Networks

Kappa Networks

25e5

Kappa Networks

Kappa Networks

NMOS MODEL PARAMETERS SPICE

spice model solid state relay

swhyste

MITEL SEMICONDUCTOR

CMOS spice model

mosfet SPICE MODEL

bsim3 0.18 micron parameters

XH035

CMOS

CMOS

spice model Tunnel diode

CMOS

0.6 um cmos process

XH018