NJT4031NT3G Search Results

Contextual Info: NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http://onsemi.com Features NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc  High DC Current Gain −

4031n

Abstract: NJT4031N NJT4031NT1G NJT4031NT3G BD 645/BD 650/PADI SOT 23
Contextual Info: NJT4031N Preferred Device Bipolar Power Transistors NPN Silicon Features •ăCollector -Emitter Sustaining Voltage - http://onsemi.com VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc •ăHigh DC Current Gain = 200 (Min) @ IC = 1.0 Adc hFE = 100 (Min) @ IC = 3.0 Adc

Contextual Info: NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http://onsemi.com Features • Epoxy Meets UL 94, V−0 @ 0.125 in • NJV Prefix for Automotive and Other Applications Requiring • NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS Unique Site and Control Change Requirements; AEC−Q101

4031N

Contextual Info: NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http://onsemi.com Features • Epoxy Meets UL 94, V−0 @ 0.125 in • ESD Ratings: Human Body Model, 3B; > 8000 V Machine Model, C; > 400 V NJV Prefix for Automotive and Other Applications Requiring

4031N

Abstract: NJV4031NT1G NJV4031NT3G
Contextual Info: NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http://onsemi.com Features • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc  High DC Current Gain − = 200 (Min) @ IC = 1.0 Adc = 100 (Min) @ IC = 3.0 Adc

4031N

Abstract: NJT4031N NJT4031NT1G NJT4031NT3G
Contextual Info: NJT4031N Bipolar Power Transistors NPN Silicon Features • Collector −Emitter Sustaining Voltage − • • • • • • VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc High DC Current Gain − hFE = 200 (Min) @ IC = 1.0 Adc = 100 (Min) @ IC = 3.0 Adc Low Collector −Emitter Saturation Voltage −