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Halo Electronics Inc TG10G-S105NJ30LF Telecom Transformer 10 GBase-T Single Port Isolation Transformer 1:1 1500Vrms 500Ohm Prim. 500Ohm Sec. SMD - Rail/Tube (Alt: TG10G-S105NJ30LF)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TG10G-S105NJ30LF	Tube		20 Weeks	280	1 - 10 - 100 - 1000 $6.48 10000 $6.39	Buy Now
Halo Electronics Inc TG10G-S105NJ30LFTR 10G SMD ISOLATION MODULE - Tape and Reel (Alt: TG10G-S105NJ30LFTR)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TG10G-S105NJ30LFTR	Tape & Reel		20 Weeks	300	1 - 10 - 100 - 1000 $6.58 10000 $6.48	Buy Now
OMRON Industrial Automation WLNJ30LEN LIMIT SWITCH, COIL SPRING (SPRING DIAMETER: 4.8), BASIC, INDICATOR NEON LAMP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	WLNJ30LEN	Bulk			1	1 $209.81 10 $209.81 100 $209.81 1000 $209.81 10000 $209.81	Get Quote
Master Electronics	WLNJ30LEN					1 $187.00 10 $187.00 100 $187.00 1000 $187.00 10000 $187.00	Buy Now
OMRON Industrial Automation WLNJ30LDN LIMIT SWITCH, COIL SPRING (SPRING DIAMETER: 4.8), BASIC, INDICATOR LED
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	WLNJ30LDN	Bulk			1	1 $204.20 10 $204.20 100 $204.20 1000 $204.20 10000 $204.20	Get Quote
Master Electronics	WLNJ30LDN					1 $182.00 10 $182.00 100 $182.00 1000 $182.00 10000 $182.00	Buy Now
OMRON Electronic Components WLNJ30LEN Basic / Snap Action Switches Flx Rod MW Coil Spring, Neon
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Sager	WLNJ30LEN				1	1 $173.25 10 $163.63 100 $157.08 1000 $157.08 10000 $157.08	Buy Now

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NJ30L Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N5911 Abstract: 2N5912 IFN5911 IFN5912 SMP5911 SMP5912 Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-16 F-16 01/99 NJ30L Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts	Original	nj30l 2n5911 2n5912 ifn5911 +3ifn5912 smp5911 smp5912	PDF
Contextual Info: B 47 9 -9 7 IFN5911, IFN5912 N-CHANNEL DUAL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maximum ratings at TA = 25eC icicpe * u « n r a . » n m .-n -n r.n -. . . Continuous Forward Gate Current Continuous Device Power Dissipation • WIDEBAND DIFFERENTIAL AMPLIFIERS	OCR Scan	ifn5911 ifn5912 fn5911 ifn9912 +2nj30l 00g07b7	PDF
Contextual Info: B 64 9-97 SMP 5911, SMP 5912 m jÄTN ^H ÄN N ETsinCO N TÜ N CTlO N m ELD ^FFK^R^ • WIDEBAND DIFFERENTIAL AMPLIFIERS SMP5011 At 25 °C free air temperature: Min Static Electrical Characteristics Gate Source Breakdown Voltage V b r g s s Gate Reverse Current	OCR Scan	smp5011 nj30l smp5912	PDF
2N6449 Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116 Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current	Original	2n3821 2n3822 2n6449 mixer u350 +8tr320 2n4861 2n4858a 2n4117 equivalent j231 2n5461 2n6450 cd860 smp5116	PDF
IFN5912 Abstract: IFN5911 NJ-30 Contextual Info: Databook.fxp 1/14/99 11:32 AM Page B-47 B-47 01/99 IFN5911, IFN5912 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Wideband Differential Amplifiers Continuous Forward Gate Current Continuous Device Power Dissipation	Original	ifn5911 ifn5912 nj-30	PDF
2N5912 Abstract: 2N5911 B-23 SMP5911 SMP5912 NJ-30 Contextual Info: Databook.fxp 1/14/99 11:31 AM Page B-23 B-23 01/99 2N5911, 2N5912 Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Wideband Differential Amplifiers Continuous Forward Gate Current Total Device Power Dissipation	Original	2n5911 2n5912 nj30l nj36d +4smp5911 smp5912 b-23 nj-30	PDF
2n5485 equivalent transistor Abstract: transconductance 2N5485 2N4416 equivalent 2N5485 interfet 2N4416 2N4416A 2N5484 2N5486 SMP4416 Contextual Info: Databook.fxp 1/14/99 11:30 AM Page B-14 B-14 01/99 2N4416, 2N4416A N-Channel Silicon Junction Field-Effect Transistor ¥ Mixers ¥ VHF Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Continuous Device Dissipation	Original	2n4416 2n4416a o-226ab o-92/18 +82n5485 equivalent transistor transconductance 2n5485 2n4416 equivalent 2n5485 interfet 2n5484 2n5486 smp4416	PDF
Contextual Info: B 23 9 -9 7 2N5911, 2N5912 DUAL N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • WIDEBAND DIFFERENTIAL AMPLIFIERS Absolute maximum ratings at TA = 25°C Continuous Forward Gate Current 50 mA Total Device Power Dissipation 500 mW Power Derating 4 mW°C	OCR Scan	2n5911 2n5912 2n9911 nj30l +10gg07h3	PDF
SMP5911 Abstract: SMP5912 Contextual Info: Databook.fxp 1/14/99 11:32 AM Page B-64 B-64 01/99 SMP5911, SMP5912 Dual N-Channel Silicon Junction Field-Effect Transistor ¥ Wideband Differential Amplifiers At 25°C free air temperature: SMP5911 SMP5912 Static Electrical Characteristics Min Min Gate Source Breakdown Voltage	Original	smp5911 smp5912 nj30l	PDF
CD860 Abstract: IFN860 NJ3600L IF3602 IFN5911 IFN5912 Contextual Info: Databook.fxp 1/14/99 11:32 AM Page B-47 B-47 01/99 IFN5911, IFN5912 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Wideband Differential Amplifiers Continuous Forward Gate Current Continuous Device Power Dissipation	Original	ifn5911 ifn5912 cd860 ifn860 +2nj3600l if3602	PDF