NJ132H Search Results

Contextual Info: B 32 9 -9 7 IF1331 N -C H A N N E L SILICO N JUNCTION FIELD-EFFECT TRANSISTOR LOW NOISE, HIGH GAIN AMPLIFIER Absolute maximum ratings at TA = 2 5'C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation

2N6449

Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

B-31

Abstract: IF1330
Contextual Info: Databook.fxp 1/14/99 1:50 PM Page B-31 B-31 01/99 IF1330 N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

NJ132H

Abstract: IF1331
Contextual Info: Databook.fxp 1/14/99 12:56 PM Page B-32 B-32 01/99 IF1331 N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier At 25°C free air temperature: Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage

2SK112

Abstract: pa 0016 equivalent equivalent transistor c 495 ifn112 NJ132H
Contextual Info: E4 9 -9 7 IF N 1 1 2 N -C H A N N E L SILICO N JU N CTIO N FIELD-EFFECT TRANSISTOR LOW NOISE, HIGH GAIN Equivalent to Japanese 2SK112 Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation

2sk112

Contextual Info: 9-97 E4 IFN112 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • LOW NOISE, HIGH GAIN • Equivalent to Japanese 2SK112 Absolute maximum ratings at TA= 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 50 V Continuous Forward Gate Current 10 mA

Contextual Info: B 31 9 -9 7 IF 1 3 3 0 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • LOW NOISE, HIGH GAIN AMPLIFIER Absolute maximum ratings at T* = 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 20 V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation

2SK146

Abstract: 2SK147 equivalent 2sk146 equivalent transistor sdg 2SK105 2sk146 datasheet 2SK105 Datasheet 2SK147 2sk152 equivalent Japanese Transistor
Contextual Info: Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions

pa 0016 equivalent

Abstract: 2sk112
Contextual Info: E4 8-94 IFN112 N - C H A N N E L S IL IC O N J U N C T IO N FIELD-EFFECT T R A N S IS T O R LOW NOISE, HIGH GAIN Equivalent to Japanese 2SK112 Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Vottage - 50 V Continuous Forward Gate Current

2SK112

Abstract: IFN112
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page D-4 D-4 01/99 IFN112 N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain ¥ Equivalent to Japanese 2SK112 Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current