NF50 HP Search Results

transistor fb 31n

Abstract: MRF5815 case 317-01 mrf581 SF-11N 5812 MOTOROLA 118-136 mhz specifications of ic 1408 MRF5812 MRF5812R1
Contextual Info: MOTOROLA Order this document by MRF581/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF581 High-Frequency Transistors MRF5812R1, R2 Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz • Low Intermodulation Distortion

str 6229

Abstract: microstripline str 6228 MGA-86576 MGA-86576-STR MGA-86576-TR1 NF50 c-band lna chip
Contextual Info: 1.5 – 8 GHz Low Noise GaAs MMIC Amplifier Technical Data MGA-86576 Features • 1.6 dB Noise Figure at 4 GHz • 23 dB Gain at 4 GHz • +6 dBm P1dB at 4 GHz • Single +5 V Bias Supply Surface Mount Ceramic Package Applications Pin Connections 4 RF INPUT

NF50 HP

Abstract: MGA-86576 MGA-86576-STR MGA-86576-TR1 NF50
Contextual Info: 1.5 – 8 GHz Low Noise GaAs MMIC Amplifier Technical Data MGA-86576 Features • 1.6 dB Noise Figure at 4 GHz • 23 dB Gain at 4 GHz • +6 dBm P1dB at 4 GHz • Single +5 V Bias Supply Surface Mount Ceramic Package Applications Pin Connections 4 RF INPUT

NF50

Abstract: U2796B
Contextual Info: Features • • • • • • Supply Voltage Range: 2.7 V to 5.5 V Excellent Isolation Characteristics Low Current Consumption: 3.2 mA without RIP3 IIP3 Programmable Input Frequency Operating Range Up to 2 GHz RF Characteristics Nearly Independent of Supply Voltage

Contextual Info: What H E W L E T T * mLliMPACKARD 1 .5 - 8 GHz Low N oise GaAs MMIC Amplifier Technical Data MGA-86576 Features • • • • 1.6 dB N oise Figure at 4 GHz 23 dB Gain at 4 GHz + 6 dBmPldB at 4 GHz Single + 5 V B ias Supply Surface Mount Ceramic Package Applications

v052

Abstract: GP 005 variable gain amplifier GHz IVA-05228 NF50
Contextual Info: Silicon Bipolar MMIC 1.5 GHz Variable Gain Amplifier Differential Option Technical Data IVA-05228 Features Description • Differential Input and Output Capability • DC to 1.5 GHz Bandwidth; 2.0 Gb/s Data Rates • High Gain: 30 dB Typical • Wide Gain Control Range:

200 mil BeO package

Abstract: HP MMIC MSA-0520 NF50
Contextual Info: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0520 Features • Cascadable 50 Ω Gain Block • High Output Power: +23 dBm Typical P1 dB at 1.0␣ GHz • Low Distortion: 33 dBm Typical IP3 at 1.0␣ GHz • 8.5 dB Typical Gain at 1.0␣ GHz

Contextual Info: HEWLETT-PACKARD/ CMPNTS blE T> • WL^m HEW LETT ml'HM PACKARD 4447SflL4 DOlDGflh 4SI ■ H P A MSA-0500 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Features Chip Outline^ • Cascadable 50 £2 Gain Block • High Output Power: +23 dBm typical P1dB at

MSA-0520

Abstract: NF50 200 mil BeO package
Contextual Info: Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0520 Features • Cascadable 50 Ω Gain Block • High Output Power: +23 dBm Typical P1 dB at 1.0 GHz • Low Distortion: 33 dBm Typical IP3 at 1.0 GHz • 8.5 dB Typical Gain at 1.0 GHz • Hermetic Metal/Beryllia

RJP3

Abstract: U2796B U2796B-FP
Contextual Info: Temic U2796B-FP TELEFUNKEN Semiconductors 2-GHz Single Blanaced M ixer Description The U2796B-FP is a 2-GHz down conversion mixer for telecommunication systems, e.g. cellular radio, CT1, CT2, DECT, PCN, using TELEFUNKEN advanced bipolar technology. The U2796B is well suited for the

motorola 7673 A

Abstract: Motorola 8039 7818 motorola MRF957 Sps 6525 motorola 7673 b 6814 motorola 40 pin sot-23 marking 7z MMBR951 MMBR951ALT1
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA The RF Line Order this document by MMBR951/D MMBR951 NPN Silicon Low Noise, High-Frequency Transistors MRF957 SERIES Designed for use in high gain, low noise small–signal amplifiers. This series

motorola 7673 A

Abstract: MRF957 MMBR951 MMBR951ALT1 MMBR951LT1 MRF957T1 NF50 sot-23 marking 7z Motorola 8039
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors Order this document by MMBR951/D MMBR951 MRF957 SERIES Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.

Contextual Info: Tem ic U2796B-FP TELEFUNKEN Semiconductors 2-GHz Single Blanaced Mixer Description The U2796B-FP is a 2-GHz down conversion mixer for telecommunication systems, e.g. cellular radio, CT1, CT2, DECT, PCN, using TELEFUNKEN advanced bipolar technology. The U2796B is well suited for the

motorola 7673 A

Abstract: MMBR951 MRF957 sot-23 marking 7z MMBR951ALT1 MMBR951LT1 MRF957T1 NF50 25SEP01
Contextual Info: The RF Line NPN Silicon Low Noise, High-Frequency Transistors Order this document by MMBR951/D MMBR951 MRF957 SERIES Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.

at-41470

Abstract: Silicon Bipolar Transistor Hewlett-Packard
Contextual Info: Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41470 Features • Low Noise Figure: 1.6 dB Typical at 2.0␣ GHz 3.0 dB Typical at 4.0␣ GHz • High Associated Gain: 14.5 dB Typical at 2.0␣ GHz 10.5 dB Typical at 4.0␣ GHz • High Gain-Bandwidth

Hp70908A

Abstract: NF50 U2796B U2796B-FP
Contextual Info: U2796B-FP TELEFUNKEN Semiconductors 2-GHz Single Balanced Mixer Description The U2796B-FP is a 2-GHz down conversion mixer for telecommunication systems, e.g. cellular radio, CT1, CT2, DECT, PCN, using TELEFUNKEN advanced bipolar technology. The U2796B is well suited for the receiver

Contextual Info: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41486 • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High Associated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT

MMBR951ALT1

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.

MRF571

Abstract: MMBR571LT1 MRF5711LT1 NF50 11608a J500
Contextual Info: MOTOROLA Order this document by MMBR571LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR571LT1 MRF571 MRF5711LT1 NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This

"RF Power Splitter"

Abstract: balun diode mixer hp 7820 u 7759 9632 transistor NF50 U2796B U2796B-FP ozone generator circuit
Contextual Info: U2796B 2-GHz Single Balanced Mixer Description The U2796B-FP is a 2-GHz down conversion mixer for telecommunication systems, e.g. cellular radio, CT1, CT2, DECT, PCN, using TEMIC Semiconductors advanced bipolar technology. The U2796B is well suited for the receiver portion of the RF circuit. Single balanced

"RF Power Splitter"

Abstract: balun diode mixer NF50 U2796B U2796B-FP ozone generator circuit
Contextual Info: U2796B-FP TELEFUNKEN Semiconductors 2-GHz Single Balanced Mixer Description The U2796B-FP is a 2-GHz down conversion mixer for telecommunication systems, e.g. cellular radio, CT1, CT2, DECT, PCN, using TELEFUNKEN advanced bipolar technology. The U2796B is well suited for the receiver

MRF9511

Abstract: MRF9511 equivalent MRF9511LT1 NF 027 J220 177.138 MMBR951 MRF957 NF 034 MMBR951ALT1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.

ic 8259

Abstract: marking AF SOT mrf9511 sps 6580
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.

Contextual Info: MOTOROLA Order this document by MMBR571LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR571LT1 MPS571 MRF571 MRF5711LT1 NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package, as well as