NF 833 Search Results

Contextual Info: Precision Series MKP 416/420 KP 460/464 Dielectric metallized polypropylene polypropylene ±2%, ±5%/E96 ±1%, ±2%, ±5%/E96 Preferred tol./E-series Encapsulation Climatic category Tan δ 10 kHz Insulation resist. R: C≤330 nF R x C: C>330 nF Pulse rise time at UR

ptg55se

Abstract: SPT06 HE301 ute 93422 PT02GS 809709 PT02Y SPT02A socapex PT08G 14-12
Contextual Info: PT/451 Subminiature cylindrical connectors 3 grooves 5 differents keys Main features of each series PT/451 Series solder version Military, aeronautics and industrial applications (in accordance with NFC UTE 93422 (HE301) / NF L 54125 (451) / Mil-C-26482)

DEUTSCH connectors FDBA

Abstract: FDBA 56 FDBA 006-0912-20 Deutsch connector fdba DBA50PR16 DBA50PR20 006-0893-16 057-0462-21 108-0005-12-B756
Contextual Info: Branche Connecteurs Aéromilitaires FDBA series Normes UTE C 93422 mod. HE 302, NF L 54130 et / and EN 3646 • Connecteur aéronautique et ferroviaire / Aeronautic and railway industry connector ■ Connecteur baïonette circulaire / Circular bayonet connector

DEUTSCH connectors FDBA

Abstract: FDBA 56 FDBA FDBA 56 20-41 connecteur DEUTSCH FDBA 057-0462-21 DBA50PR16 Deutsch connector fdba 108-0005-12-B756 006-0912-20
Contextual Info: Branche Connecteurs Aéromilitaires FDBA series Normes UTE C 93422 mod. HE 302, NF L 54130 et / and EN 3646 • Connecteur aéronautique et ferroviaire / Aeronautic and railway industry connector ■ Connecteur baïonette circulaire / Circular bayonet connector

Contextual Info: MCH4009 Ordering number : ENA0389 NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage. High gain : NF=1.1dB typ f=2GHz .

Contextual Info: Mini-Circuits - Specification for Amplifier - ZFL-1000GH Amplifier print this page ZFL-1000GH Frequency MHz f L - fU GAIN, dB Min. Maximum Power, dBm Dynamic Range VSWR DC Power Output 1 dB Comp. Max. Flatness Input (no damage) NF dB Typ. 10-1200 24 ±1.50

Contextual Info: Mini-Circuits - Specification for Amplifier - ZQL-900MLN Amplifier print this page ZQL-900MLN Frequency MHz fL - fU GAIN, dB Min. Maximum Power, dBm Dynamic Range DC Power Max. Flatness Output 1 dB Comp. Input (no damage) NF dB Typ. 824-849 26 ±0.50 +24.50

Contextual Info: Mini-Circuits - Specification for Amplifier - ZQL-900LN Amplifier print this page ZQL-900LN Frequency MHz fL - fU GAIN, dB Min. Max. Flatness Maximum Power, dBm Dynamic Range DC Power Output 1 dB Comp. Input (no damage) NF dB Typ. 824-849 15 ±0.50 +21.00

CW68

Contextual Info: Mini-Circuits - Specification for Amplifier - ZQL-900MLNW Amplifier print this page ZQL-900MLNW Frequency MHz fL - fU GAIN, dB Min. Maximum Power, dBm Dynamic Range DC Power Max. Flatness Output 1 dB Comp. Input (no damage) NF dB Typ. 800-900 22 ±2.20 +23.00

Contextual Info: Mini-Circuits - Specification for Amplifier - ZQL-900LNW Amplifier print this page ZQL-900LNW Frequency MHz fL - fU GAIN, dB Min. Max. Flatness Maximum Power, dBm Dynamic Range DC Power Output 1 dB Comp. Input (no damage) NF dB Typ. 800-900 13 ±1.60 +21.00

mje 3007

Abstract: 264 bf 6032 TB 1226 EN ENA0389A mch4009 MJE 13500
Contextual Info: MCH4009 Ordering number : ENA0389A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • • Low-noise use : NF=1.1dB typ f=2GHz High cut-off frequency : fT=25GHz typ (VCE=3V)

transistor 8331

Abstract: LD SOT 423 transistor marking v64 ghz kf 982 NE34018 NE34018-TI-64
Contextual Info: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package NE34018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 20 mA FEATURES • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) 25 4 Noise Figure, NF (dB) GA • HIGH ASSOCIATED GAIN:

Contextual Info: MCH4009 Ordering number : ENA0389A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • • Low-noise use : NF=1.1dB typ f=2GHz High cut-off frequency : fT=25GHz typ (VCE=3V)

NE38018 V68

Abstract: transistor NEC D 587 NE38018 NE38018-T1 NE38018-T2 VP15-00-3 37792
Contextual Info: PRELIMINARY DATA SHEET Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm V67 , OIP3 = 23 dBm (V68) typ. at f = 2 GHz

mje 3007

Contextual Info: Ordering number : ENA0389A MCH4009 RF Transistor 3.5V, 40mA, fT=25GHz, NPN Single MCPH4 http://onsemi.com Features • • • • • Low-noise use : NF=1.1dB typ f=2GHz High cut-off frequency : fT=25GHz typ (VCE=3V) Low operating voltage High gain : |S21e|2=17dB typ (f=2GHz)

C 3807 transistor

Abstract: NE38018 NE38018-TI-67 NE38018-TI-68
Contextual Info: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package FEATURES NE38018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VCE = 2 V, ID= 5 mA • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) 25 4 Noise Figure, NF (dB) • HIGH ASSOCIATED GAIN: 14.5 dB typical at 2 GHz

21134 015

Abstract: nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051
Contextual Info: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OlPs = 22 dBm V67 , OlPs = 23 dBm (V68) typ. at f = 2 GHz

V64 SOT 23

Abstract: 16118 transistor marking v64 ghz NE34018-TI-63-A NE34018-TI-64-A NE34018 NE34018-A marking V64 sot343
Contextual Info: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 20 mA FEATURES • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) • LOW NOISE FIGURE: 0.6 dB typical at 2 GHz NE34018 25 4 Noise Figure, NF (dB)

150J10

Contextual Info: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package FEATURES NE38018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VCE = 2 V, ID= 5 mA • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) 25 4 Noise Figure, NF (dB) • HIGH ASSOCIATED GAIN: 14.5 dB typical at 2 GHz

4871 marking

Abstract: ta 7205 marking V64 sot343 NE34018 V64 SOT 23 LD SOT 423 948 LG transistor kf 508
Contextual Info: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package NE34018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VCE = 3 V, ID= 20 mA FEATURES • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) 25 4 Noise Figure, NF (dB) GA • HIGH ASSOCIATED GAIN: 16.0 dB typical at 2 GHz

Contextual Info: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. G a = 14.5 dB typ. O IP 3 = 22 dBm V67 , O IP 3 = 23 dBm (V68) typ. at f = 2 GHz

Contextual Info: r e c e iv e d O C T Î $ 20fl0 DOCUMENT CONTROL REVISI DESCRIPTION NOTES: LETTER 1. DISSIPATION FACTOR: .005 MAX O 25* C, 1 kHZ 2. CAPACITANCE: 27 - 33 nF. — 3. DIELECTRIC WITHSTANDING VOLTAGE: 22.5 kV RATED 120 MAX 25.9 kV BURN-IN FOR 2 HRS 100* C 29.3 kV PROOF FOR 5 SECONDS

HT 1000-4 power amplifier

Abstract: mip 836 ic mip 836 schematic weigh scale AD7730 circuit integrate TB 1226 CN wheelchair motor 24v SCHEMATIC ad7730 1000 watt RMS professional audio power amplifier schematic Circuit ad7730 pcb circuit example electric bicycle dc motor control 36v
Contextual Info: NEW PRODUCT APPLICATIONS - 1 9 9 8 spring edition BOOST vi n O ^ SW ITC H V|N +7V TO +24V ADP3050-5 O V 0UT +5V @ 1A BIAS ON FB GND COMP 1 22|xF 4 k il 1 nF 1 0 0 jlF * V OUT V|N C - Q1 -O h anyCAP LDO TOPOLOGY - | - C COMP N O N IN V E R T IN G W ID E B A N D

MCH4009

Abstract: FC 0137 MJE 13500 1180M
Contextual Info: MCH4009 注文コード No. N A 0 3 8 9 三洋半導体データシート N MCH4009 特長 ・低雑音である NPN エピタキシァルプレーナ型シリコントランジスタ UHF ~ X バンド低雑音増幅 , 発振用 : NF=1.1dB typ （f=2GHz）