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Glenair Inc 319AS001NF2208-29 Circular MIL Spec Strain Reliefs & Adapters SHRINK BOOT ADAPTERS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	319AS001NF2208-29					1 $701.02 10 $436.96 100 $302.07 1000 $302.07 10000 $302.07	Get Quote
Everlight Electronics Co Ltd 67-21S/NFR3C-P2050B2C41829Z15/2T Single Color LEDs
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	67-21S/NFR3C-P2050B2C41829Z15/2T					1 - 10 - 100 - 1000 - 10000 -	Get Quote

NF 829 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: TCE 11 TCE 13 CONDENSATEURS CERAMIQUE MOULES CLASSE 1 MOLDED CERAMIC CAPACITORS CLASS 1 NP0 NP0 NP0 -150 ppm/°C NP0 Conformes aux spécifications des normes CECC 30600 et NF C 83131 In accordance with the specifications of CECC 30600 and NF C 83131 standards	Original		PDF
0603CG Contextual Info: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose Class 1, NP0 16 V TO 50 V 0.22 pF to 33 nF Product Specification – August 05, 2011 V.8 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors	Original	Size1210 16V-to100V 50-to-500V 3-to-50V 0603CG	PDF
General purpose NP0 Contextual Info: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose Class 1, NP0 16 V TO 50 V 0.22 pF to 33 nF Product Specification – August 05, 2011 V.8 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors	Original	Size1210 16V-to100V 50-to-500V 3-to-50V General purpose NP0	PDF
FSU01LG Abstract: Eudyna Devices Contextual Info: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package	Original	FSU01LG FSU01LG Eudyna Devices	PDF
FSU01LG Contextual Info: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package	Original	FSU01LG FSU01LG	PDF
FSU01LG Contextual Info: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package	Original	FSU01LG FSU01LG	PDF
fujitsu GHz gaas fet Abstract: fujitsu gaas fet FSU01LG Contextual Info: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package	Original	FSU01LG FSU01LG FCSI0598M200 fujitsu GHz gaas fet fujitsu gaas fet	PDF
FSU01LG Contextual Info: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package	Original	FSU01LG FSU01LG	PDF
YNM0007 Abstract: YNM0008 General purpose NP0 Contextual Info: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose Class 1, NP0 16 V TO 50 V 0.22 pF to 33 nF Product Specification – Jan 06, 2011 V.6 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors General Purpose	Original	16V-to100V 50-to-500V 3-to-50V YNM0007 YNM0008 General purpose NP0	PDF
452 fet Abstract: FSU01LG fujitsu GHz gaas fet fujitsu gaas fet Contextual Info: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=12GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package	Original	FSU01LG 12GHz FSU01LG FCSI0598M200 452 fet fujitsu GHz gaas fet fujitsu gaas fet	PDF
Contextual Info: plerowTM ALN0855 Internally Matched LNA Module Features Description • S21 = 27.4 dB@829 MHz = 26.6 dB@881 MHz · NF of 0.65 dB over Frequency · Unconditionally Stable · Single 5 V Supply · High OIP3@Low Current C o u pl er C o u pl er The plerowTM ALN-series is the compactly designed surface-mount	Original	ALN0855 25x25mm 13x13mm)	PDF
fujitsu gaas fet Abstract: fujitsu GHz gaas fet Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package	Original	FSU02LG FSU02LG FCSI0598M200 fujitsu gaas fet fujitsu GHz gaas fet	PDF
FSU02LG Abstract: Eudyna Devices FUJITSU RF 053 DC bias of gaas FET Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package	Original	FSU02LG FSU02LG Dissipa4888 Eudyna Devices FUJITSU RF 053 DC bias of gaas FET	PDF
phycomp capacitors npo Abstract: YNM0007 YNM0008 General purpose NP0 Contextual Info: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose Class 1, NP0 16 V TO 50 V 0.22 pF to 33 nF Product Specification – Jun 02, 2009 V.1 RoHS compliant Product specification Surface-Mount Ceramic Multilayer Capacitors SCOPE This specification describes NP0	Original	16V-to100V 50-to-500V 3-to-50V phycomp capacitors npo YNM0007 YNM0008 General purpose NP0	PDF

1084 fet Abstract: fujitsu gaas fet fujitsu GHz gaas fet Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package	Original	FSU02LG FSU02LG FCSI0598M200 1084 fet fujitsu gaas fet fujitsu GHz gaas fet	PDF
Contextual Info: Mini-Circuits - Specification for Amplifier - ZEL-0812LN Amplifier print this page ZEL-0812LN Frequency MHz fL - fU GAIN, dB Min. Maximum Power, dBm Dynamic Range DC Power Max. Flatness Output 1 dB Comp. Input (no damage) NF dB Typ. 800-1200 20 ±1.00 +8.00	Original	ZEL-0812LN	PDF
Contextual Info: Mini-Circuits - Specification for Amplifier - ZEL-0812LN Amplifier print this page ZEL-0812LN Frequency MHz f L - fU GAIN, dB Min. Maximum Power, dBm Dynamic Range Output 1 dB Comp. Max. Flatness Input (no damage) NF dB Typ. 800-1200 20 ±1.00 +8.00 +13.00	Original	ZEL-0812LN	PDF
Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package	Original	FSU02LG FSU02LG	PDF
fujitsu gaas fet Abstract: FSU01LG Contextual Info: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P ^ b = 20.0dBm Typ. • High Associated Gain: G ^ b = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@ f=12G Hz • Low Bias Conditions: V d s =3V, 10mA • Cost Effective Hermetic Microstrip Package	OCR Scan	FSU01LG 190dB 12GHz FSU01LG FCSI0598M200 fujitsu gaas fet	PDF
transistor NEC D 587 Abstract: transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586 Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1±0.1 • Low Voltage Use 1.25±0.1 • Low Cob : 0.9 pF TYP. Emitter to Base Voltage	Original	2SC4885 transistor NEC D 587 transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586	PDF
Contextual Info: Mini-Circuits - Specification for Amplifier - ZHL-0812HLN Amplifier print this page ZHL-0812HLN Frequency MHz fL - fU GAIN, dB Min. Max. Flatness Maximum Power, dBm Dynamic Range DC Power Output 1 dB Comp. Input (no damage) NF dB Typ. IP3 dBm Typ. 800-1200 30 ±1.00	Original	ZHL-0812HLN	PDF
FMM5702X Abstract: FMM5702 Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for	Original	FMM5702X 27-32GHz FMM5702X FCSI0599M200 FMM5702	PDF
TC236 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES Excellent Low NF in Low Frequency Band 2 .1± 0.1 Low Voltage Use 1.25±0.1 Low Cob : 0 .9 pF T Y P . Low Noise Voltage : 90 mV TYP.	OCR Scan	2SC4885 SC-70 CO193 TC236	PDF
FMM5702 Abstract: FMM5702X 34500 544 mmic 2732G NF 936 Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for	Original	FMM5702X 27-32GHz FMM5702X FCSI0599M200 FMM5702 34500 544 mmic 2732G NF 936	PDF

NF 829 Search Results

NF 829 Price and Stock

Glenair Inc 319AS001NF2208-29

Everlight Electronics Co Ltd 67-21S/NFR3C-P2050B2C41829Z15/2T

NF 829 Datasheets Context Search

0603CG

General purpose NP0

FSU01LG

FSU01LG

FSU01LG

fujitsu GHz gaas fet

FSU01LG

YNM0007

452 fet

fujitsu gaas fet

FSU02LG

phycomp capacitors npo

1084 fet

fujitsu gaas fet

transistor NEC D 587

FMM5702X

TC236

FMM5702