NF 829 Search Results
NF 829 Datasheets Context Search
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Contextual Info: COND. CERAMIQUE POUR ALIMENTATIONS A DECOUPAGE H.F. CLASSE 1 CERAMIC CAPACITORS FOR H.F. SWITCHING POWER SUPPLIES CLASS 1 102 ⌱ eff. A 102 ⌱ eff. (A) 102 5 5 5 2 2 2 10 10 10 5 5 5 2 2 2 1 1 1 5 5 5 2 0,1 5 102 CEC 53 68 nF 220 nF 470 nF CEC 55 180 nF |
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Contextual Info: 9 =W S age TNC P H Ro oir / See CONDENSATEURS CHIPS CERAMIQUE MULTICOUCHES MULTILAYER CERAMIC CHIP CAPACITORS Conformes aux spécifications des normes CECC 32101 et NF C 93133 In accordance with the specifications of CECC 32101 and NF C 93133 standards E12 E24 E48 E96 |
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Contextual Info: TCE 11 TCE 13 CONDENSATEURS CERAMIQUE MOULES CLASSE 1 MOLDED CERAMIC CAPACITORS CLASS 1 NP0 NP0 NP0 -150 ppm/°C NP0 Conformes aux spécifications des normes CECC 30600 et NF C 83131 In accordance with the specifications of CECC 30600 and NF C 83131 standards |
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0603CGContextual Info: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose Class 1, NP0 16 V TO 50 V 0.22 pF to 33 nF Product Specification – August 05, 2011 V.8 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors |
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size121016v-to100v50-to-500v3-to-50v+1 | |
General purpose NP0Contextual Info: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose Class 1, NP0 16 V TO 50 V 0.22 pF to 33 nF Product Specification – August 05, 2011 V.8 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors |
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size121016v-to100v50-to-500v3-to-50v+1 | |
FSU01LG
Abstract: Eudyna Devices
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fsu01lgeudyna devices | |
FSU01LGContextual Info: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package |
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fsu01lg | |
FSU01LGContextual Info: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package |
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fsu01lg | |
General purpose NP0Contextual Info: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose Class 1, NP0 16 V TO 50 V 0.22 pF to 33 nF Product Specification – Oct 26, 2009 V.2 RoHS compliant Product specification Surface-Mount Ceramic Multilayer Capacitors General Purpose NP0 |
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16v-to100v50-to-500v3-to-50vgeneral purpose np0 | |
fujitsu GHz gaas fet
Abstract: fujitsu gaas fet FSU01LG
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fsu01lgfcsi0598m200fujitsu ghz gaas fetfujitsu gaas fet | |
YAGEO
Abstract: General purpose NP0
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size121016v-to100v50-to-500v3-to-50v+2 | |
FSU01LGContextual Info: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package |
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fsu01lg | |
YNM0007
Abstract: YNM0008 General purpose NP0
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16v-to100v50-to-500v3-to-50vynm0007+2 | |
452 fet
Abstract: FSU01LG fujitsu GHz gaas fet fujitsu gaas fet
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fsu01lg12ghzfcsi0598m200452 fet+2 | |
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Contextual Info: plerowTM ALN0855 Internally Matched LNA Module Features Description • S21 = 27.4 dB@829 MHz = 26.6 dB@881 MHz · NF of 0.65 dB over Frequency · Unconditionally Stable · Single 5 V Supply · High OIP3@Low Current C o u pl er C o u pl er The plerowTM ALN-series is the compactly designed surface-mount |
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aln085525x25mm13x13mm | |
fujitsu gaas fet
Abstract: fujitsu GHz gaas fet
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fsu02lgfcsi0598m200fujitsu gaas fetfujitsu ghz gaas fet | |
FSU02LG
Abstract: Eudyna Devices FUJITSU RF 053 DC bias of gaas FET
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fsu02lgdissipa4888eudyna devicesfujitsu rf 053+1 | |
phycomp capacitors npo
Abstract: YNM0007 YNM0008 General purpose NP0
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16v-to100v50-to-500v3-to-50vphycomp capacitors npo+3 | |
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Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package |
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fsu02lgeud49 | |
1084 fet
Abstract: fujitsu gaas fet fujitsu GHz gaas fet
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fsu02lgfcsi0598m2001084 fetfujitsu gaas fet+1 | |
5503 FET
Abstract: 5503 GM FSU02LG FSU02
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fsu02lg5503 fet5503 gmfsu02 | |
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Contextual Info: Mini-Circuits - Specification for Amplifier - ZEL-0812LN Amplifier print this page ZEL-0812LN Frequency MHz fL - fU GAIN, dB Min. Maximum Power, dBm Dynamic Range DC Power Max. Flatness Output 1 dB Comp. Input (no damage) NF dB Typ. 800-1200 20 ±1.00 +8.00 |
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zel-0812ln | |
General purpose NP0Contextual Info: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose Class 1, NP0 16 V TO 50 V 0.22 pF to 33 nF Product Specification – Apr 15, 2009 V. 0 RoHS compliant Product specification Surface-Mount Ceramic Multilayer Capacitors SCOPE This specification describes NP0 |
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16v-to100v50-to-500v3-to-50vgeneral purpose np0 | |
FSU02LG
Abstract: v 4836 fujitsu GHz gaas fet
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fsu02lgfcsi0598m200v 4836fujitsu ghz gaas fet | |