NF 829 Search Results

0603CG

Contextual Info: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose Class 1, NP0 16 V TO 50 V 0.22 pF to 33 nF Product Specification – August 05, 2011 V.8 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors

FSU01LG

Abstract: Eudyna Devices
Contextual Info: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package

FSU01LG

Contextual Info: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package

FSU01LG

Contextual Info: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package

YNM0007

Abstract: YNM0008 General purpose NP0
Contextual Info: DATA SHEET SURFACE-MOUNT CERAMIC MULTILAYER CAPACITORS General purpose Class 1, NP0 16 V TO 50 V 0.22 pF to 33 nF Product Specification – Jan 06, 2011 V.6 RoHS compliant & Halogen Free Product specification Surface-Mount Ceramic Multilayer Capacitors General Purpose

452 fet

Abstract: FSU01LG fujitsu GHz gaas fet fujitsu gaas fet
Contextual Info: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=12GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package

Contextual Info: plerowTM ALN0855 Internally Matched LNA Module Features Description • S21 = 27.4 dB@829 MHz = 26.6 dB@881 MHz · NF of 0.65 dB over Frequency · Unconditionally Stable · Single 5 V Supply · High OIP3@Low Current C o u pl er C o u pl er The plerowTM ALN-series is the compactly designed surface-mount

fujitsu gaas fet

Abstract: fujitsu GHz gaas fet
Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package

FSU02LG

Abstract: Eudyna Devices FUJITSU RF 053 DC bias of gaas FET
Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package

Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package

1084 fet

Abstract: fujitsu gaas fet fujitsu GHz gaas fet
Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package

Contextual Info: Mini-Circuits - Specification for Amplifier - ZEL-0812LN Amplifier print this page ZEL-0812LN Frequency MHz fL - fU GAIN, dB Min. Maximum Power, dBm Dynamic Range DC Power Max. Flatness Output 1 dB Comp. Input (no damage) NF dB Typ. 800-1200 20 ±1.00 +8.00

Contextual Info: Mini-Circuits - Specification for Amplifier - ZEL-0812LN Amplifier print this page ZEL-0812LN Frequency MHz f L - fU GAIN, dB Min. Maximum Power, dBm Dynamic Range Output 1 dB Comp. Max. Flatness Input (no damage) NF dB Typ. 800-1200 20 ±1.00 +8.00 +13.00

Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package

Contextual Info: Mini-Circuits - Specification for Amplifier - ZHL-0812HLN Amplifier print this page ZHL-0812HLN Frequency MHz fL - fU GAIN, dB Min. Max. Flatness Maximum Power, dBm Dynamic Range DC Power Output 1 dB Comp. Input (no damage) NF dB Typ. IP3 dBm Typ. 800-1200 30 ±1.00

FMM5702X

Abstract: FMM5702
Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for

TC236

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES Excellent Low NF in Low Frequency Band 2 .1± 0.1 Low Voltage Use 1.25±0.1 Low Cob : 0 .9 pF T Y P . Low Noise Voltage : 90 mV TYP.

FMM5702

Abstract: FMM5702X 34500 544 mmic 2732G NF 936
Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for

874 561 0 4V

Abstract: FMM5702X FMM5702
Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for

IC TB 1237 AN

Abstract: "marking nm" 2SC6024 CBC 337 cbc 547
Contextual Info: 2SC6024 Ordering number : ENN8290 NPN Epitaxial Planar Silicon Transistor 2SC6024 UHF to C Band Low-Noise Amplifier and OSC Applications Features • • • • • Low-noise use : NF=1.2dB typ f=2GHz . High cut-off frequency : fT=14GHz typ (VCE=1V). : fT=21GHz typ (VCE=3V).

Contextual Info: COMPONENT RESEARCH CO I bSE D • 5303^11 00DQ70? OTT ^ 1 2 Component Research METALLIZED POLYCARBONATE CAPACITOR J- f l- t S PRODUCT FEATURES { 7 i" y 1.0 /nF 30VDC ACTUAL SIZE CAPACITOR QUALIFIED TO MIL-C-83421/01 FAILURE RATE S. HERMETICALLY SEALED, HIGH RELIABILITY SCREENED FOR CRITICAL AEROSPACE APPLICATIONS.

mje 317 equivalent

Abstract: 2SC5091FT
Contextual Info: 2SC5091FT SPICE2G6 model parameters 20010110 NET LIST .SUBCKT 2SC5091FT CB 2 LWB 2 LWE 4 Cpe 4 Cpb 5 LC 6 CC 1 CBC 1 Q1 6 5 4 + AREA= 1 .MODEL NPN + IS + BF + NF + VAF + IKF + ISE + NE + BR + NR + VAR + IKR + ISC + NC + RB + IRB + RBM + RE + RC + XTB + EG

TRANSISTOR J 5804 NPN

Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.

Contextual Info: IsoLoop Isolated CAN Evaluation Board Board No.: IL41050-01 NVE Corporation 952 829-9217 iso-apps@nve.com www.IsoLoop.com www.nve.com About This Evaluation Board This Evaluation Board provides a complete isolated CAN node using the revolutionary IL41050TA-3E isolated transceiver.