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    NF 018 GE Search Results

    NF 018 GE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FD300 diode

    Abstract: F300 relay Leach f370 fd300 isolation pad 10114 F300 Leach
    Contextual Info: SERIES F370 ENGINEERING DATA SHEET RAILWAY RELAY 2 PDT, 1 AMP / 72VDC Polarized, non latching, hermetically sealed relay 2 PDT Contact arrangement Coil supply Direct current Meets the requiements of MIL-R-6106 CEECC16101-018 NF F 62-002-2 PRINCIPLE TECHNICAL CHARACTERISTICS


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    72VDC MIL-R-6106 CEECC16101-018 SF300CE40E FD300 diode F300 relay Leach f370 fd300 isolation pad 10114 F300 Leach PDF

    isolation pad 10114

    Abstract: Leach f370 F300 relay F370-B
    Contextual Info: SERIES F370 ENGINEERING DATA SHEET RAILWAY RELAY 2 PDT, 1 AMP / 72VDC Polarized, non latching, hermetically sealed relay 2 PDT Contact arrangement Coil supply Direct current Meets the requiements of MIL-R-6106 CEECC16101-018 NF F 62-002-2 PRINCIPLE TECHNICAL CHARACTERISTICS


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    72VDC MIL-R-6106 CEECC16101-018 SF300CE40E isolation pad 10114 Leach f370 F300 relay F370-B PDF

    MB15H156

    Abstract: XTAL_SMD 2bit quantizer XTAL-SMD 3528 pwm 20 PINS transistor+bc+151+equivalent
    Contextual Info: January 2005 MB15H156 RTS v1.51.doc Reference Target Specification Fully Integrated GPS RF Downconverter MB15H156 GENERAL DESCRIPTION The MB15H156 GIRAFE GPS Integrated Radio Analog Front End implements a LNA, an image-reject mixer with a RF-AMP, a band pass filter, an AGC, and a fully


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    MB15H156 MB15H156 564MHz, 456MHz LCC-32P-M08) LCC-32P-M08 -110dBm 456MHz) 128MHz) XTAL_SMD 2bit quantizer XTAL-SMD 3528 pwm 20 PINS transistor+bc+151+equivalent PDF

    SIGMA as 226

    Abstract: db opera 415 operational amplifier discrete schematic A004R AMMC-5618 AMMP-5618 AMMP-5618-BLK AMMP-5618-TR1 AMMP-5618-TR2
    Contextual Info: Agilent AMMP-5618 6–20 GHz General Purpose Amplifier Data Sheet Features • 5 x 5 mm surface mount package • Broad band performance 6–20 GHz • High +19 dBm output power • Medium 13 dB typical gain • 50Ω input and output match Description Agilent’s AMMP-5618 is a high


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    AMMP-5618 AMMP-5618 sel18-TR1 AMMP-5618-TR2 5989-1994EN SIGMA as 226 db opera 415 operational amplifier discrete schematic A004R AMMC-5618 AMMP-5618-BLK AMMP-5618-TR1 AMMP-5618-TR2 PDF

    NTE102A

    Abstract: nte103a germanium transistors NPN Germanium Power Diodes npn germanium pnp germanium transistor GERMANIUM germanium transistor pnp Common emitter amplifier diode germanium
    Contextual Info: NTE102A PNP & NTE103A (NPN) Germanium Complementary Transistors Medium Power Amplifier Description: The NTE102A (PNP) and NTE103A (NPN) are Germanium complementary transistors in a TO1 type package designed for use as a medium power amplifier. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


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    NTE102A NTE103A 300mA 500mA, NTE102A nte103a germanium transistors NPN Germanium Power Diodes npn germanium pnp germanium transistor GERMANIUM germanium transistor pnp Common emitter amplifier diode germanium PDF

    NTE102A

    Abstract: germanium transistors NPN nte103a germanium transistor pnp npn germanium Germanium power
    Contextual Info: NTE102A PNP & NTE103A (NPN) Germanium Complementary Transistors Medium Power Amplifier Description: The NTE102A (PNP) and NTE103A (NPN) are Germanium complementary transistors in a TO1 type package designed for use as a medium power amplifier. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


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    NTE102A NTE103A 300mA 500mA, NTE102A germanium transistors NPN nte103a germanium transistor pnp npn germanium Germanium power PDF

    pin diodes radiation detector

    Abstract: 18E DBM 125HFBD 125LFBD 175HFBD 175LFBD 225HFBD 225LFBD 275HFBD 275LFBD
    Contextual Info: CUSTOM COMPONENTS •'rWk ~3I 1ÖE D INC ■ 257Ö555 OGOQOLfl 3 ■ DETECTOR DIODES r/mws=iam i M"i I % GERMANIUM FEATURES: • • • • • • • Part Number 'p luA Range pF RV VF2 RS CT VR1 (Max.) MV (Typ.) MV (Typ.) Q(Typ.) a (Typ.) K3 mV/mW TSS4


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    125LFBD 125HFBD 175LFBD 175HFBD 225LFBD 225HFBD 275LFBD 275HFBD 325LFBD 325HFBD pin diodes radiation detector 18E DBM PDF

    Contextual Info: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MMBT3906 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General Purpose Amplifier C Pin Configuration


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    MMBT3906 OT-23 350mWatts OT-23 30Vdc, IC/10 PDF

    Contextual Info: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT3906 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General Purpose Amplifier C Pin Configuration


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    MMBT3906 OT-23 350mWatts OT-23 30Vdc, 10mAdc, IC/10 PDF

    BFP420 application notes 900MHz

    Abstract: BFP420 BFP420 application note rf amplifier siemens 10 ghz aplication note BCR400
    Contextual Info: Application Note No. 018 Discrete & RF Semiconductors G. Lohninger A Low-Noise-Amplifier at 900 MHz using SIEGET BFP420 This application note describes a low noise amplifier at 900MHz using SIEMENS SIEGET®25 BFP420. The design emphasis has been on achieving a


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    BFP420 900MHz BFP420. 10dBm 100pF BFP420 application notes 900MHz BFP420 BFP420 application note rf amplifier siemens 10 ghz aplication note BCR400 PDF

    1am sot 23

    Abstract: MARKING 1AM
    Contextual Info: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT3904 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation NPN General


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    MMBT3904 OT-23 350mWatts 30Vdc, 10mAdc, 50mAdc, IC/10 1am sot 23 MARKING 1AM PDF

    Contextual Info: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBT3906 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General Purpose Amplifier C Pin Configuration Top View 2A B E SOT-23


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    MMBT3906 OT-23 350mWatts OT-23 30Vdc, IC/10 PDF

    Contextual Info: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT3906 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General


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    MMBT3906 OT-23 350mWatts 30Vdc, 10mAdc, 50mAdc, IC/10 PDF

    oscillator pnp 800MHZ

    Abstract: NTE160 "PNP Transistor" transistor germanium Germanium power
    Contextual Info: NTE160 Germanium PNP Transistor RF–IF Amp, FM Mixer OSC Description: The NTE160 is a germanium mesa PNP transistor in a TO72 metal case designed for use as a preamplifier mixer and oscillator up to 900MHz. Absolute Maximum Ratings: Collector–Emitter Voltage VBE = 0 , VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V


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    NTE160 NTE160 900MHz. 100MHz 450kHz 800MHz oscillator pnp 800MHZ "PNP Transistor" transistor germanium Germanium power PDF

    NTE2645

    Contextual Info: NTE2645 Silicon PNP Transistor General Purpose Amp Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175V


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    NTE2645 100kHz 100Hz 10kHz NTE2645 PDF

    rf2711

    Abstract: 1611f j1300 BF115 j1200
    Contextual Info: RF2711             • UHF Digital and Analog Receivers • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery Powered Equipment • Spread Spectrum Communication Systems • General Purpose Frequency Conversion


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    RF2711 RF2711 1611f j1300 BF115 j1200 PDF

    1611f

    Contextual Info: RF2711             • UHF Digital and Analog Receivers • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery Powered Equipment • Spread Spectrum Communication Systems • General Purpose Frequency Conversion


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    RF2711 RF2711 100kHz 250MHz, 1611f PDF

    Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


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    FSU02LG FSU02LG Eud49 PDF

    Contextual Info: STI322000D1 -xxV 72-PIN DIMMS 2M X 32 DRAM DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI322000D1 is a 2M bits x 32 Dynamic RAM high density memory module. The Simple Technology STI322000D1 consist of four CMOS 2M x 8 DRAMs in 28-pin


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    STI322000D1 STI322000D1-60 STI322000D1-80V 110ns 130ns 150ns 72-PIN PDF

    Contextual Info: RF2721 QUADRATURE DEMODULATOR Typical Applications • UHF Digital and Analog Receivers • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery-Powered Equipment • Spread-Spectrum Communication Systems • General Purpose Frequency Conversion


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    RF2721 RF2721 100kHz 500MHz, 100nF PDF

    SIGMA as 226

    Abstract: ta 8659 an operational amplifier discrete schematic SIGMA 226 SIGMA 226 manual Sigma AS 226 manual zo 607 A004R AMMC-5618 AMMP-5618
    Contextual Info: AMMP-5618 6–20 GHz General Purpose Amplifier Data Sheet Description Avago’s AMMP-5618 is a high power, medium gain amplifier that operates from 6 GHz to 20 GHz. The amplifier is designed to be an easy-to-use component for any surface mount PCB application. In


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    AMMP-5618 AMMP-5618 AMMP-5618-BLK AMMP-5618-TR1 AMMP-5618-TR2 5989-3210EN 5989-3545EN SIGMA as 226 ta 8659 an operational amplifier discrete schematic SIGMA 226 SIGMA 226 manual Sigma AS 226 manual zo 607 A004R AMMC-5618 PDF

    2N290

    Abstract: bc143 2N3570 2N3571 2N3572 2N4252 2N4253 2N918 BFT79 T018
    Contextual Info: Metal Can Device Type 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0-48 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T 072 T 072 T 072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200


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    4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 High59 BS9365 2N290 bc143 BFT79 T018 PDF

    Contextual Info: SMA661AS GPS HIGH GAIN LNA ICs PRELIMINARY DATA GENERAL FEATURES • LOW NOISE FIGURE 1.4 dB @ 1.575 GHz ■ HIGH GAIN 17 dB @ 1.575 GHz ■ POWER DOWN FUNCTION ■ TEMPERATURE COMPENSATED ■ UNCONDITIONALLY STABLE ■ INTEGRATED OUTPUT MATCHING ■ 70 GHz Silicon Germanium TECHNOLOGY


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    SMA661AS OT666) OT666 SMA661AS 575GHz) PDF

    BC107 equivalent transistors

    Abstract: EQUIVALENT TRANSISTOR bc108 bc109 equivalent transistor t05 bc108 equivalent BC107 equivalent equivalent transistor bc107 2N2484 equivalent transistors equivalent of transistor bc108 BC177 equivalent
    Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Amplifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra


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    BCW35GP. BS9365 2N4036 2N4037 BS3365 2N4030 BC107 equivalent transistors EQUIVALENT TRANSISTOR bc108 bc109 equivalent transistor t05 bc108 equivalent BC107 equivalent equivalent transistor bc107 2N2484 equivalent transistors equivalent of transistor bc108 BC177 equivalent PDF