NF 018 GE Search Results
NF 018 GE Datasheets Context Search
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FD300 diode
Abstract: F300 relay Leach f370 fd300 isolation pad 10114 F300 Leach
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72VDC MIL-R-6106 CEECC16101-018 SF300CE40E FD300 diode F300 relay Leach f370 fd300 isolation pad 10114 F300 Leach | |
isolation pad 10114
Abstract: Leach f370 F300 relay F370-B
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72VDC MIL-R-6106 CEECC16101-018 SF300CE40E isolation pad 10114 Leach f370 F300 relay F370-B | |
MB15H156
Abstract: XTAL_SMD 2bit quantizer XTAL-SMD 3528 pwm 20 PINS transistor+bc+151+equivalent
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MB15H156 MB15H156 564MHz, 456MHz LCC-32P-M08) LCC-32P-M08 -110dBm 456MHz) 128MHz) XTAL_SMD 2bit quantizer XTAL-SMD 3528 pwm 20 PINS transistor+bc+151+equivalent | |
SIGMA as 226
Abstract: db opera 415 operational amplifier discrete schematic A004R AMMC-5618 AMMP-5618 AMMP-5618-BLK AMMP-5618-TR1 AMMP-5618-TR2
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AMMP-5618 AMMP-5618 sel18-TR1 AMMP-5618-TR2 5989-1994EN SIGMA as 226 db opera 415 operational amplifier discrete schematic A004R AMMC-5618 AMMP-5618-BLK AMMP-5618-TR1 AMMP-5618-TR2 | |
NTE102A
Abstract: nte103a germanium transistors NPN Germanium Power Diodes npn germanium pnp germanium transistor GERMANIUM germanium transistor pnp Common emitter amplifier diode germanium
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NTE102A NTE103A 300mA 500mA, NTE102A nte103a germanium transistors NPN Germanium Power Diodes npn germanium pnp germanium transistor GERMANIUM germanium transistor pnp Common emitter amplifier diode germanium | |
NTE102A
Abstract: germanium transistors NPN nte103a germanium transistor pnp npn germanium Germanium power
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NTE102A NTE103A 300mA 500mA, NTE102A germanium transistors NPN nte103a germanium transistor pnp npn germanium Germanium power | |
pin diodes radiation detector
Abstract: 18E DBM 125HFBD 125LFBD 175HFBD 175LFBD 225HFBD 225LFBD 275HFBD 275LFBD
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125LFBD 125HFBD 175LFBD 175HFBD 225LFBD 225HFBD 275LFBD 275HFBD 325LFBD 325HFBD pin diodes radiation detector 18E DBM | |
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Contextual Info: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# MMBT3906 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General Purpose Amplifier C Pin Configuration |
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MMBT3906 OT-23 350mWatts OT-23 30Vdc, IC/10 | |
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Contextual Info: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMBT3906 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General Purpose Amplifier C Pin Configuration |
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MMBT3906 OT-23 350mWatts OT-23 30Vdc, 10mAdc, IC/10 | |
BFP420 application notes 900MHz
Abstract: BFP420 BFP420 application note rf amplifier siemens 10 ghz aplication note BCR400
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BFP420 900MHz BFP420. 10dBm 100pF BFP420 application notes 900MHz BFP420 BFP420 application note rf amplifier siemens 10 ghz aplication note BCR400 | |
1am sot 23
Abstract: MARKING 1AM
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MMBT3904 OT-23 350mWatts 30Vdc, 10mAdc, 50mAdc, IC/10 1am sot 23 MARKING 1AM | |
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Contextual Info: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBT3906 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General Purpose Amplifier C Pin Configuration Top View 2A B E SOT-23 |
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MMBT3906 OT-23 350mWatts OT-23 30Vdc, IC/10 | |
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Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMBT3906 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General |
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MMBT3906 OT-23 350mWatts 30Vdc, 10mAdc, 50mAdc, IC/10 | |
oscillator pnp 800MHZ
Abstract: NTE160 "PNP Transistor" transistor germanium Germanium power
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NTE160 NTE160 900MHz. 100MHz 450kHz 800MHz oscillator pnp 800MHZ "PNP Transistor" transistor germanium Germanium power | |
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NTE2645Contextual Info: NTE2645 Silicon PNP Transistor General Purpose Amp Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175V |
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NTE2645 100kHz 100Hz 10kHz NTE2645 | |
rf2711
Abstract: 1611f j1300 BF115 j1200
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RF2711 RF2711 1611f j1300 BF115 j1200 | |
1611fContextual Info: RF2711 • UHF Digital and Analog Receivers • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery Powered Equipment • Spread Spectrum Communication Systems • General Purpose Frequency Conversion |
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RF2711 RF2711 100kHz 250MHz, 1611f | |
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Contextual Info: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package |
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FSU02LG FSU02LG Eud49 | |
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Contextual Info: STI322000D1 -xxV 72-PIN DIMMS 2M X 32 DRAM DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI322000D1 is a 2M bits x 32 Dynamic RAM high density memory module. The Simple Technology STI322000D1 consist of four CMOS 2M x 8 DRAMs in 28-pin |
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STI322000D1 STI322000D1-60 STI322000D1-80V 110ns 130ns 150ns 72-PIN | |
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Contextual Info: RF2721 QUADRATURE DEMODULATOR Typical Applications • UHF Digital and Analog Receivers • Commercial and Consumer Systems • Digital Communication Systems • Portable Battery-Powered Equipment • Spread-Spectrum Communication Systems • General Purpose Frequency Conversion |
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RF2721 RF2721 100kHz 500MHz, 100nF | |
SIGMA as 226
Abstract: ta 8659 an operational amplifier discrete schematic SIGMA 226 SIGMA 226 manual Sigma AS 226 manual zo 607 A004R AMMC-5618 AMMP-5618
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AMMP-5618 AMMP-5618 AMMP-5618-BLK AMMP-5618-TR1 AMMP-5618-TR2 5989-3210EN 5989-3545EN SIGMA as 226 ta 8659 an operational amplifier discrete schematic SIGMA 226 SIGMA 226 manual Sigma AS 226 manual zo 607 A004R AMMC-5618 | |
2N290
Abstract: bc143 2N3570 2N3571 2N3572 2N4252 2N4253 2N918 BFT79 T018
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4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 High59 BS9365 2N290 bc143 BFT79 T018 | |
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Contextual Info: SMA661AS GPS HIGH GAIN LNA ICs PRELIMINARY DATA GENERAL FEATURES • LOW NOISE FIGURE 1.4 dB @ 1.575 GHz ■ HIGH GAIN 17 dB @ 1.575 GHz ■ POWER DOWN FUNCTION ■ TEMPERATURE COMPENSATED ■ UNCONDITIONALLY STABLE ■ INTEGRATED OUTPUT MATCHING ■ 70 GHz Silicon Germanium TECHNOLOGY |
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SMA661AS OT666) OT666 SMA661AS 575GHz) | |
BC107 equivalent transistors
Abstract: EQUIVALENT TRANSISTOR bc108 bc109 equivalent transistor t05 bc108 equivalent BC107 equivalent equivalent transistor bc107 2N2484 equivalent transistors equivalent of transistor bc108 BC177 equivalent
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BCW35GP. BS9365 2N4036 2N4037 BS3365 2N4030 BC107 equivalent transistors EQUIVALENT TRANSISTOR bc108 bc109 equivalent transistor t05 bc108 equivalent BC107 equivalent equivalent transistor bc107 2N2484 equivalent transistors equivalent of transistor bc108 BC177 equivalent | |