NESM054 Search Results

ti35

Abstract: NESM054 33 ti35
Contextual Info: 0 /V E F ^ IP NESM054 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N-CHANNEL • REPETITIVE AVALANCHE RATINGS • L O W R D S O N • LOW DRIVE REQUIREMENT • DYNAMIC dv/dt RATING A B S O L U T E M A X IM U M R A T IN G S (T c = 25°C unless otherw ise noted)

Contextual Info: Back to FETs 0 /V E F ^ IP NEW ENGLAND SEMICONDUCTOR POWER MOSFET N-CHANNEL • REPETITIVE AVALANCHE RATINGS • L O W R D S O N • LOW DRIVE REQUIREMENT • DYNAMIC dv/dt RATING ABSOLUTE M AXIM U M R A TING S (Tc = 25°C unless otherwise noted) SYM BOL

CP666

Abstract: CP640 TO-213AA CP664
Contextual Info: FETS Page 1 of 7 Next Home Package Device Type BVDSS Volts RDS on @ 0.5 ID Ohms ID Continuous Amps IDM Pulse Drain Current Amps TO-5 NES130/5 100 0.18 8 32 25 TO-5 NES230/5 200 0.40 5.5 22 25 TO-213AA/66 NSFJ1000 1000 4.2 3.0 10 70 TO-213AA/66 NSFJ120 100