NERA Search Results

Contextual Info: ¡_dr0*fin[ numbs,. f/ ClUOH LSI // Mo ttftBA LC7365NM, JsAXYO D TM F Tone G nerator for P ushbutton T elephone / / . [ Tht; [ j C T3&5NM, 73-66N M pire D T M F tone g ì nera tur L S ls for use in pushbulton Liì3cplwnes. Tiie L C ÌJG fti^ M cunU iin sa licytiDHrd acan c irc u ii btiq thè LC73Gf>N.M can d irtc t tctrp l. thè output iYom a

Contextual Info: NERAL SEMICONDUCTOR TS DE I BTlflSTO G C m m s 3.918590 G E NERAL S E M I C O N D U C T O R neral Sem iconductor Industries, Inc» FEATURES i 5000waltsPeakPulsePower dissipation i Availableinrangesfrom5.0to110 volts > DeslgnedforDCpowersupply applications

TT 2158

Contextual Info: 2SK1212-01R FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES • Features • High current • Low orwesistance • No secondary breakdown • Low driving power • Avalanche-proof ■ Applications • DC-DC converters • Motor controllers • Gt neral purpose power amplifier

J201

Abstract: MMBFJ202 J202
Contextual Info: ÏV1 :0 C ^N >3ä.:>rr. T O R J201 J202 MMBFJ201 MMBFJ202 SOT-23 Mark: 6 2 P I 62Q N-Channel neral Purpose Amplifier T h is d e v ic e is d e s ig n e d p rim a rily fo r lo w level a u d io and g e nera l p u rp o s e a p p lic a tio n s w ith high im p e d a n c e signal sou rces. S ourced

Contextual Info: 3DE D f Z 7 ^ 7 # • S G 7^237 S - T H O s M 0030^01 fi ■ S O N fL K g T F lO K i B C 3 9 3 S G S-THOMSON HIGH VOLTAGE AMPLIFIER DESCRIPTIO N The BC393 is a silicon planar epitaxial PNP trans­ istor in Jedec TO-18 metal case, designed for ge­ neral purpose high-voltage and video amplifier ap­

Contextual Info: Eice DR IV ER High voltage gate driver IC 6E D f a mil y - 2 nd g e nera tion 3 phase 200 V and 600 V gate drive IC 6EDL04I06PT 6EDL04I06NT 6EDL04N06PT 6EDL04N02PR EiceDRIVER™ datash eet <Revision 2.3>, 20.06.2013 Indust rial Po wer & Con trol Edition 20.06.2013

Contextual Info: Eice DR IV ER High voltage gate driver IC 6E D f a mil y - 2 nd g e nera tion Chip pr od uct 3 phase 600 V gate drive IC 6ED003L06-C2 6EDL04I06PC 6EDL04I06NC 6EDL04N06PC EiceDRIVER™ datash eet <Revision 2.2>, 19.02.2013 Indust rial Po wer an d C ont rol

SCN2653/SCN68653

Abstract: SCN2653AC4N16 SCN2653 2653 SIGNETICS X3.28 nak SCN2661 300MIL CRC-12 CRC-16 SCN2651
Contextual Info: Signetics SCN2653/SCN68653 Polynomial nerator Checker PGC Product Specification Microprocessor Products DESCRIPTION FEATURES The Signetics SCN2653/68653 Polyno­ mial nerator Checker (PGC) Is a poly­ nomial ge nerator ch e c k e r/c h a ra c te r comparator circuit that complements a

Peripheral interface 8255

Abstract: 8255 programmable peripheral MP8255 MP8080A Peripheral interface 8255 pinout
Contextual Info: MP8255-I D E S C R IP T IO N T he MP8255 is a pro g ra m m a b le pe ripheral inte rface c o n tained in a standard, 40-pin d u a l-in -lin e package. The chip, w h ic h is fab ricate d u s ing N -cha nne l s ilic o n gate tech n o lo g y, fu n c tio n s as a g e nera l-pu rpose

8.5K

Contextual Info: neralGeneral Purpose Axial Purpose AxialLeaded Leaded Power Wirewound Resistor wer Wirewound Resistor neral Purpose Axial Leaded Power Wirewound Resistor Fireproof high temperature ceramic case- stand offs optional PW Axial Series • 0.10Ω to 30KΩ to 30KΩ · 2 watts to 25 watts

Contextual Info: neralGeneral Purpose Purpose Radial Terminal dial Terminal Power Wirewound Resistor wer Wirewound Resistor neral Purpose PW Radial Series dial Series • 0.10 to 2.0K Radial Terminal · · Power Wirewound Resistor to 2.0KΩ 20 watts to 50 watts ±10% or ±5% tolerance

Contextual Info: Eice DR IV ER High voltage gate driver IC 6E D f a mil y - 2 nd g e nera tion 3 phase 600 V gate drive IC 6ED003L06-F2 6ED003L02-F2 EiceDRIVER™ datash eet <Revision 2.2>, 16.03.2012 Indust rial Po wer & Con trol Edition 16.03.2012 Published by Infineon Technologies AG

6EDL04N02

Abstract: PG-TSSOP-28 MIPI bridge 6EDL04I06P
Contextual Info: EI CE D RI V ER High voltage gate driver IC 6E D f a mil y - 2 nd g e nera tion 3 phase 600 V gate drive IC 6ED003L06-F2 6ED003L02-F2 6EDL04I06PT 6EDL04I06NT 6EDL04N06PT 6EDL04N02PR EICEDRIVER™ datash eet <Revision 1.2>, 28.08.2011 Preliminary AS IC & P owe r I C

6ED2

Contextual Info: EI CE D RI V ER High voltage gate driver IC 6E D f a mil y - 2 nd g e nera tion 3 phase 600 V gate drive IC 6ED003L06-F2 6ED003L02-F2 6EDL04I06PT 6EDL04I06NT 6EDL04N06PT 6EDL04N02PR EICEDRIVER™ Preli mina r y datas he et <Revision 1.1>, 08.08.2011 Preliminary

CP32P

Contextual Info: LORAL NICROtilAVE-FSI SIE D • 5530130 QQDD4L.D 155 HARMONIC NERATOR VARACTORS DESCRIPTION APPLICATIONS The G C3200 series o f harm onic ge nera to r varactors uses a single epitaxial silicon die. Strict material and process controls result in h igh reproducibility. A unique silicon dioxide passiva­

TWX910-950-1942

Abstract: XGSA1530 XGSA1535 XGSA1540
Contextual Info: SÛUARE D CO/ IS GE NERAL 3918590 NERAL m D ÖSSSSOÖ 0002205 95D SEMI CONDUCTOR neral ^ Semiconductor . Industries, Inc. 1 D 02205 5QURRE T1 COMPHNY NPN SW ITCHING POWER TRANSISTORS This unique series utilizes G neral Sem iconductor Industries' C 2R process which

Contextual Info: M MDB190 00ZB Zero Delay Buffer for PCIe Gen1/G Gen2/Gen3 , SI, and QPI SAS, SATA, ES Gen neral Desc cription Featu ures The MDB1900ZB is a true ze ero delay bufffer with a fullyperformance, low-power, and low-phase integrated, high-p e programmable PLL.

Contextual Info: PL610-32/3 32A/33 1.8V to 3.3V. 32.76 68KHz XO IC with 515 or 794 4 Dividers Gen neral Desc cription Featu ures PL61 10-32 is a member m of Micrel’s Pico oXo Family of produ ucts and is designed d to fit in a small 2mm x 1.6m mm form-factor or larger ceramic module. It ca

KDS 4.000 Crystal

Abstract: KDS 4.000 oscillator
Contextual Info: MICRF2 229 40 00MHz to 4 450MHz AS SK/OOK Re eceiver with Auto-Poll and RSSI Gen neral Desc cription Featu ures The MICRF229 is a 400MHz to 45 50MHz supe err with automatic ga ain heterrodyne, image-reject, RF receiver contrrol, ASK/OOK K demodulato or, and analo

TRANSISTOR D400

Abstract: D400 transistor d400 e nt transistor d400 transistor d400 t f C200-600 s9014 equivalent transistor TO-92 S9015 transistor S9014
Contextual Info: S9014 NP N EP ITAXIAL S ILICON TRANSISTOR Ge nera l Purpos e Applica tion S witching Application TO- 92 Collector Curre nt Ic=100mA Collector P owe r Dissipa tion P c=450mW Comple men tary to S9015 ABSOLUTE MAXIMUM RATINGS Characteristic Ta =25 Symbol Value

FCQFN

Contextual Info: MIC285 511 60 0VIN, 3A Sy ynchronous s Buck Regulator Gen neral Desc cription Featu ures The MIC28511 is i a synchro onous step-d down switching regullator with inte ernal power sw witches capable of providing up to o 3A output current from a wide inpu ut supply range

Contextual Info: SG111ISG211/SG311 SjUCDN . s g ΠNERAL VOLTAGE COMPARATOR UNEAR INTEGRATED CIRCUITS DESCRIPTION FEATURES TheSG111/SG211/SG311 Voltage Comparators are mediumspeed, high-input impedance devices which are especially well suited for use in level detection and low-level voltage sensing

NE535N

Abstract: 5535 12 NE5535 NE535T ne535
Contextual Info: N E /SE 535-T • N E /SE 5535-F,K ,N ,N -14 DESCRIPTION PIN CONFIGURATIONS T he 535 and 5535 are new ge nera tion o p era­ tion al a m p lifie rs fe a tu rin g high slew rates c o m bined w ith im proved in p u t ch a ra c te ris ­ tics. The 535 is a sin g le device w h ile the

Contextual Info: 6W7 G TUNG'SOL TRIPLE GRID DtTECTOR AMPLIFIER UNI P O T E N T I A L C AT H OD E !.l ATfcR 6 . 3 VOL^S O.l'i AMkEfiE £>!.’ OK DC THt 3OTT0M sMZW SOL 0ft/C !S A TP'^LE GWID h&NERAL PURPOSE DETEC“ TOR AMPLIFIER, ftUCH IS DESIGNED FOP SERVICE TIONS THAT IN APPLICA­