NEE JO Search Results

ohmite

Contextual Info: Metal Alley Film Resistors, 5% Tolerance Available in E24 Ohmic Values Metal Film Resistors, 1% Toler.: nee Available in E96 Ohmic values Mil. approved or Industrial graces c -<— — ► < A ► y — B < -/ - — D- ► y -T c FEATURES FEATURES

Contextual Info: 208 Series FDDI/ST Adapter ; M 81 r~ 4 6 5 - •■ t; !© r:^_. 2.;.jo 56.64; : i 1 % ' ' L . *'JC C 0 M W E N 0 E. D V M '-tL -if) *■ -,drj. KF-' VONF IG JP A T K 'N iS E E EHEi:;-vV' . t:,b. FDDI/ST Adapter Part Numbers* :.:T D 4 - 4 C THREADED !NEE

Contextual Info: i En secr/oAf,A Ban d e 4*0,4 £ , 5 f o ,2 -A SECTiON 5 ,2 * 0,3 B -B t0 3 i [ 8 | % , ^ E n i ! 4 * ~ j - . ~ j • 1. N ■fSJ - ° / 2 V ra c 3ecT/ON/4 -A s c c T/O N 2 ß fiH 0.3(Pfl) B-B 7J ±0¿ 0 2,25 io,1 ï ¿ e < jO P R O N E R — ^ 1<5 E N BANDE

TGS2611

Abstract: figaro TGS2611 TI-327 methane TGS2611 TCS2611 FIGARO Figaro Tcs S000 KS 5313 LTYT
Contextual Info: TECHNICAL INFORMATION FOR TGS2611 Technical Information for Methane Gas Sensors ^ ^ ^ ^ ^ Ci '«r> Th e Figaro 2600 series is a new ty p e th ic k film m etal oxid e sem iconductor, screen |>rinled gas sensor w h ic h o ffe rs miniaLurizationand low er power

GMM2649228CNTG

Contextual Info: GMM2649228CNTG LG Sam icon Co, Ltd. 8,388,608 WORDS x 64 BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM Description Features The GMM2649228CNTG is a 8M x 64 bits Synchronous Dynamic RAM SO-DIMM which is assembled 8pieces of 4M x 16bits Synchronous DRAMs in 54 pin TSOP II

Contextual Info: 2 THIS DRAWING IS UNPUBLISHED. BY C O P Y R I G HT 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R|3 H T S LOC AD RESERVED. REV I S I O N S D I ST 00 LTR DE S C R I P T I O N DWN DATE E C O - 0 7 - 0 0 6 9 55 I I APR 2 0 0 7 RB APVD JO 81.60

SSI201

Abstract: CRC17 POTENTIOMETERS PP17
Contextual Info: CRC17 MRC17 y V MODULAR CARBON AND CERMET POTENTIOMETERS The PP17 series indudes resistance elements [Smear and loga-itbm icb batiery switches* drive units, m ounting brackets, detents, shielding, cover, and! heatsink, w b b h c a n be efficie n tly assembled to

Contextual Info: Ordering num ber:EN 1979B SB60-05H N0.1979JB Schottky Barrier Diode Twin Type • Cathode Common SANYO i 50V, 6A Rectifier A p p lic a tio n s •H igh frequency rectification (switching regulators, converters, choppers). F e a tu r e s • Low forward voltage (Vp max = 0.55V).

409L

Abstract: LA7285 LA7285M MFP24S
Contextual Info: Ordering number:EN4091 Monolithic Linear IC LA7285,7285M /S A p f V O l VCR Audio Signal Recording and Playback Processor X Overview Package Dimensiçn^i The LA7285 and LA7285M include on chip all functions required for the record and playback o f VCR audio

Avantek, Inc

Abstract: Avantek 29353
Contextual Info: AVANTEK INC GbE D | Q avantek T-39-05 IM-2935-3 3 Watt, 2.9-3.5 GHz Internally Matched Power GaAs FET Avantek IMFET Package Features • • • • • • 0QGtiD12 T | 2.9-3.5 GHz Minimum Bandwidth Internally Matched Input/Output Impedance High Output Power

Contextual Info: Ordering number : EN4684 SBA100-09Y No.4684 Schottky B arrier Diode Twin Type • Cathode Common SAXYO 90V, 10A Rectifier I A p p licatio n s • High frequency rectification (switching regulators, converters, and choppers). F e a tu re s • Low forward voltage (Vp- max = 0.75 V).

FLM1213-4C

Abstract: GaAs FETs fujitsu gaas fet N32C microwave databook
Contextual Info: p. FLM1213-4C . J Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 35.5dBm Typ. • • • • • High Gain: G-j^B = 5.0dB (Typ.) High PAE: riadd = 22% (Typ.) Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed

BPY62

Abstract: Phototransistor to-18 glass lens phototransistor
Contextual Info: SIEMENS AKTIENGESEL LSCH AF 47E D flS3SbGS 002750b S « S I E Û SIEM ENS BPY62 SERIES PHOTOTRANSISTOR Package Dimensions in Inches mm m 018 I0 45) — ,6 a 217 (5 5) 211 (5 35) 0 1 (2 54) 187 \ (4 75) Max \ \ Radiant Sensitive Area Maximum Ratings Operating and Storage Temperature (T ^ , T^ .

2SK2170

Contextual Info: Ordering number: EN4858 2SK2170 No.4858 N-Channel Junction Silicon FET SAXYO Impedance Converter Applications I Applications •Low-frequency amp, analog switch, constant current source. F eatu re s ■Very small-sized package permitting 2SK2170-applied sets to be made small and slim.

UAA3536

Abstract: CGY2015 HVQFN40 GSM Transceiver ZERO-IF PCF506
Contextual Info: Philips Semiconductors The UAA3536 is a low-power GSM triple-band transceiver based on the N-ZIF Near-Zero Intermediate Frequency RF architecture. The UAA3536 is a GSM900/1800/1900 GPRS class 12-capable single-chip RF solution, with edge 4RX capabilities.

3RSTE

Contextual Info: 1 2 DRAWING D R EC TI0N B SPACE (SPACE) CONNECTOR PACKAGING STYLE PT NO ô > I I C AT. NO. P A R T S NAME Q'TY MATERIAL NOTE CARDBOARD OR POLYSTYRENE REEL 1 PET RESM OR PP RES IN PLASTE (EMB0SSÍ TAPE COVER POLYESTER COLOR : TRANSPARENCY BTPW_R-3RSTLF SEE ATTACHED DWG

Contextual Info: PICO ’s Miniaturized Power Inductors PICO Surface Mount Power Inductors are ideal for Noise, Spike and Power Filtering Applications in Power Supplies, DC-DC Converters and Switching Regulators s tifffAJ2| All Inductors have split windings— ratings shown In table are for series connection. Parallel

EN2758

Abstract: 2SC3775 2SC4405
Contextual Info: Ordering number:EN 2758 No.2758 i 2SC4405 NPN Epitaxial Planar Silicon Transistor SAh YO i UHF, Low-Noise, W ide-Band A m plifier A pplications Applications •UHF, low-noise amplifiers, wide-band amplifiers Features fr=5.0GHz typ • High cutoff frequency

Contextual Info: S p e c tra -Z ip p la n a r c a b le — 191-2801 series benefits * Fast, low-cosi mass l^m inaton. * Precise spadna for ternra ed electri­ cal cfiarsdansiticH * Fieaib^e gray PVC Insulsiiqn * Oouble COniSdr alkJws terminaricn rn?meilfier side of taiie.

Contextual Info: REVISIONS This document is the property of Amphenol Corporation and to detoured on the express condMon that it to not to be dhcloeed. reproduced or ueed, in •hole or in port fo r manufacture or eale by anyone other than Amphenol anon vRnout n prior concen» < mat no ngnt is Qranieo to oncioso

TGS203

Abstract: Figaro TGS203 FIGARO ke 25 LV1011 FIC-5401 carbon monoxide ir sensor TGS 832 TCS2113 TGS 832 sensor acetone gas sensor
Contextual Info: TECHNICAL INFO RM ATIO N FOR TGS203 Technical in fo rm atio n for C arbon M o n o xid e Sensors T h c n u i k c t l n g o f T C S2D3 iia rL o d in s o m Leon d u cU v e ty pc c a rb o n m o m v ìd o s c u s a r foaLur¡n g It ig li S L 'k'clii'ily a n d s ta b ility .

Contextual Info: H M 2142 40 9 6 -w o rd s x 1 -b it Very High Speed Random A c c e ss Mem ory The H M 2 1 4 2 is 4096-w ords x 1-bit very high speed read/w rite, random access m em ory developed fo r high speed systems such as pads and co n tro l/b u ffer storages. The fabrication process uses the Hitachi's low capacitance, oxide

AN176 Signetics

Abstract: compandor cookbook 570 compandor AN176 Signetics Application Notes ne570 AN176
Contextual Info: Philips Components-Signetics Document AN 176 Application Note Author. Signetics Date Compandor cookbook D ecem ber 1988 RP Communications Com pandors are versatile, low cost, dual-channel gain control devices for audio frequencies. They are used in tape decks, cordless telephones, and

MOSFET BA7

Abstract: TSM2N7000 TSM2N7000CT
Contextual Info: TAIW AN $ SEMICONDUCTOR pb RoHS TSM2N7000 60V N-Channei MOSFET COM PLIAN CE Pin Definition; PRODUCT SUMMARY 1. S o u rce 2. Gate Vos (V) R D S(on )(Q ) 60 5 @ VGS = 1 0 V Id (mA) 3. Drain 75 1 23 Features Block Diagram • Fast Switching Speed • Low Input and Output Leakage