NEC TO-252 MARKING INFORMATION Search Results

nec 2571

Abstract: NEC D 553 C nec 2571 4 pin NEC IC D 553 C 3771 nec nec 716 nec 1565 transistor marking T83 ghz
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0 .3 p F T Y P .

transistor 1211

Abstract: transistor su 312 transistor zo 109
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

2SC5005

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2709TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The ,uPC2709TB is a silicon monolithic integrated circuits designed as 1st IF amplifier for DBS tuners. This IC is packaged in super minimold package which is sm aller than conventional minimold.

NEC D 553 C

Abstract: TRANSISTOR MAC 223 NEC IC D 553 C
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance C re = 0.3 pF TYP.

nec 2571 4 pin

Abstract: nec 2571 3771 nec ZO 103 MA 75 603 2SC4957 2SC4957-T1 2SC4957-T2 marking 2748 transistor marking T83 ghz
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance Cre = 0.3 pF TYP.

uPC5023

Abstract: uPc842 nec 10f uPC5700 oa10 diode specs UPC5020 SW01A RG03 upc5024 UPC4558
Contextual Info: µPC5700 Series Analog Master II AM2 Family ted a r g e t y In nce l h g i H n ma o r i o s f i r c e e tP Pr High- perior Cos u with S SI A g o l Ana C New s t c u Prod What Is an Analog Master? An analog master is a semi-custom LSI for creating analog circuits on a master wafer by interconnecting pre-diffused

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA652TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm FEATURES 2.5 V drive available Low on-state resistance RDS(on)1 = 294 mΩ MAX. (VGS = −4.5 V, ID = −1.0 A) RDS(on)2 = 336 mΩ MAX. (VGS = −4.0 V, ID = −1.0 A)

PC2709

Abstract: PC2709T VP15-00-3 marking c1e transistor UPC2709TB-E3
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2709TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC2709TB is a silicon monolithic integrated circuits designed as 1st IF amplifier for DBS tuners. This IC is packaged in super minimold package which is smaller than conventional minimold.

NEC 2561

Abstract: nec 2561 le NEC 2561 LE 301 sem 2105 16 pin saa 1074 SAA 1061 nec 2561 4 pin cp 1099 c 945 p 331 saa 1049
Contextual Info: PRELIMINARY DATA SHEET_ NEC GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.0 dB TYP. @f = 12 GHz • Gate Length : Lg = 0.8 yum recessed gate • Gate Width : Wg = 400 ym

d1557

Abstract: d472 TRANSISTOR TRANSISTOR d1557 transistor d472 D1162 D1790 D1557 transistor D1866 Nec d862 transistor D442
Contextual Info: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE428M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE428M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.

marking c1e transistor

Abstract: marking c1e PC2709 PC2709T VP15-00-3 UPC2709 antenna parabola PC2709TB
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2709TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC2709TB is a silicon monolithic integrated circuits designed as 1st IF amplifier for DBS tuners. This IC is packaged in super minimold package which is smaller than conventional minimold.

CD 1691 CB

Abstract: NEC 7924 NEC D 986 IC - 7434
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 10 GHz TYP. • Low Noise, High Gain •

2SC4571

Abstract: 2SC4571-T1 2SC4571-T2
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the

NEC 7924

Abstract: ic 7924 2SC5013 2SC5013-T1 2SC5013-T2 application of IC 4538
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 10 GHz TYP. in millimeters QUANTITY 2SC5013-T1

2SC4571

Abstract: 2SC4571-T1 2SC4571-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

c1677C

Abstract: P12152E C1677 C10535E PC1677C TRANSISTOR 1616 ac
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC1677C 5 V-BIAS, +19.5 dBm OUTPUT, 1.8 GHz WIDE BAND SiMMIC AMPLIFIER DESCRIPTION The µPC1677C is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +17 dBm TYP. output at 1 GHz, this IC is recommendable for transmitter

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NEC D 586

Abstract: transistor NEC D 587 NT 407 F TRANSISTOR TO 220 741 vtvm transistor NEC D 986 NT 407 F power transistor NEC D 882 p 2SC4885 R13* MARKING TC236
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

st vu

Abstract: cc460 Himax NEC SOI switch 043tg
Contextual Info: NEC MOS INTEGRATED CIRCUIT /¿PD42S16800L, 4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The /JPD42S16800L, 4216800L, 42S17800L, 4217800L are 2 097 152 w ords by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the |iPD42S16800L, 42S17800L can execute CAS before RAS self refresh see

Contextual Info: NEC MOS INTEGRATED CIRCUIT /¿PD42S16800L, 4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The /JPD42S16800L, 4216800L, 42S17800L, 4217800L are 2 097 152 w ords by 8 bits dynamic CMOS RAMs. These differ in refresh cycle and the |iPD42S16800L, 42S17800L can execute CAS before RAS self refresh see

P3Z smd code

Abstract: smd code marking NEC g
Contextual Info: QUICK REFERENCE GUIDE 5 PACKAGING SPECIFICATION FOR "SMD PACKING INFORMATION . _ BULK PACKING 2 /3 PIN ULTRA SUPER MINI MOLD TYPE N0->T1 TYPE N 0. -T2 Q 'ty 3 0 0 0 pcs./reel 8 mm TAPE 2 PIN SUPER MINI MOLD TYPE NO.: -T 1 TYPE NO >T2 Q 'ty 3 0 0 0 pcs./reel

transistor NEC D 882 p

Abstract: 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTO R 4 PINS SU PER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters fT = 6.5 G H zT Y P . • Low Noise, High Gain