NEC RELIABILITY 1995 Search Results

NEC 10F

Abstract: low-noise L-band tuner nec mmic Monolithic Amplifier NEC JAPAN TRANSISTORS 1981 nec book
Contextual Info: just imagine NEC MUL TI MEDI A NESAT PROCESS nan By utilizing the NESAT NEC Silicon Advanced Technology process, NEC realizes low-noise silicon transistors, high-perform ance silicon m onolithic integrated circuits, as well as in the super high-frequency range high reliability.

Contextual Info: NEC SEMICONDUCTOR DEVICE RELIABILITY/QUALITY CONTROL SYSTEM MICROCOMPUTER LSI MEMORY IC GATE ARRAY LOGIC LSI 1. BASIC PRINCIPLES OF THE RELIABILITY/QUALITY CONTROL SYSTEM . 3 2. MANUFACTURING PROCESS QUALITY CONTROL .

marking code B2 NEC

Abstract: NEC tantalum capacitor 104 TANTALUM capacitor nec date code marking NEC 105M C105 SVHA1A225M SVHB21A475M SVHC1A156M DIP capacitor tantalum electronic corporation
Contextual Info: DATA SHEET TANTALUM CAPACITOR SV/H SERIES SURFACE MOUNT RESIN MOLDED TANTALUM CHIP CAPACITORS HIGH RELIABILITY NEC’s SV/H series solid tantalum capacitor has developed for automotive application. Comparing to the former type R Series , the higher reliability and the higher performance have been built in the

General Micro-electronics

Abstract: SMT pitch roadmap ansys darveaux ansys CP-01019-1 Electronic Arrays FR4 thermal expansion constant vs temperature neural network BGA cte amkor flip
Contextual Info: Building Reliability Into Full-Array BGAs Yuan Li, Ph.D., Anil Pannikkat, Ph.D., Larry Anderson, Tarun Verma, Bruce Euzent Altera Corporation 101 Innovation Drive, San Jose, CA 95134 Electronic Arrays, NEC, IMP and Altera Corp. He joined Altera in 1992 and is currently Director

TR-NWT-001217

Abstract: IEC60107-4-104 001217 MIL-STD-202F101D
Contextual Info: NEW PRODUCTS 5 2.0 mm PITCH METRIC CONNECTOR Seiichi Murakami Introduction NEC has developed a series of metric connectors FB series with excellent features to aid high-density mounting, a high transmission rate, and high connection reliability. These connectors are ideal boardto-board connectors for connecting the

PA101B

Abstract: PA103 PA104 MICRO-X TRANSISTOR MARK Q6 4 npn transistor ic 14pin upa101g PA102B UPA101 P10944EJ2V0AN00
Contextual Info: Application Note HIGH FREQUENCY NPN TRANSISTOR ARRAYS µPA101 µPA102 µPA103 µPA104 Document No. P10944EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) Printed in Japan 1995, 1999 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.

Contextual Info: MICROCOMPUTER LSI MEMORY 1C GATE ARRAY LOGIC LSI The information In th is docum ent 1« »ubject to change w ith o u t notice. Document No. Cl0983EJ3V0tF00 3rd edition (Previous No. iEi-1203) Date Published December 1995 P Printed in Japan NEC Corporation 1986

smt 35rv

Abstract: smd code marking NEC tantalum capacitor DN0J101M1S NRA225M10 smd code marking NEC capacitor MARKING CODE SMD JW DN0J 35rv transistor horizontal c 5936 104 TANTALUM capacitor nec
Contextual Info: CAPACITORS DATA BOOK NEC Corporation 1995 PREFACE Since the development of solid electrolyte tantalum capacitor having excellent performance in 1955, NEC has been advancing research into new materials and improved production technologies, and has introduced

d 65632

Abstract: 65612 nec L302 CMOS Transmission gate Specifications nec cmos CMOS-5 NEC OPENCAD CMOS Block library 700-207
Contextual Info: CMOS-6/ 6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. February 1995 Description Figure 1. Sample CMOS-6/6A/6 V/6X Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are high performance, sub-micron effective channel length CMOS products

gf200 form

Abstract: IR100 8B10B PF200 S100 S200 TP100
Contextual Info: TERMBOY IEEE1394 LONG-HAUL ADAPTER The Termboy long-haul adapter extends distance between equipment from 4.5 m to over 50 m, while keeping interoperability with IEEE1394-1995 equipment. The Termboy family supports modified 8B10B coding in compliance with P1394b draft specifications, and has alternative four PMDs for long-haul

nec d 588

Abstract: nec naming rule nec product naming rule NEC CMOS-4
Contextual Info: CMOS-9 3.3-VO LT, 0 .35-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. Preliminary March 1995 Description Figure 1. CMOS-9 Package Examples; BGA and QFP NEC's CMOS-9 gate array family provides designers with the performance capabilities and features required

uPD65801

Abstract: UPD65812 uPD65800 PD65810 PD65811 CMOS Transmission gate Specifications uPD65806 UPD65804 uPD65802 uPD65813
Contextual Info: NEC Electronics Inc. CMOS-8 5-VOLT, 0.6-MICRON CMOS GATE ARRAYS August 1995 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are high performance, submicron gate arrays, targeted for applications requiring extensive integration and high speeds. The device

uPD65801

Abstract: uPD65800 UPD65804
Contextual Info: CMOS-8 5-VOLT, 0.6-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. August 1995 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are high performance, sub­ micron gate arrays, targeted for applications requiring e xtensive in te g ra tio n and high speeds. The device

nec naming rule

Abstract: L302
Contextual Info: NEC Electronics Inc. UNIVERSAL PCI SERIES MIXED-VOLTAGE 0.6-MICRON CMOS GATE ARRAYS March 1995 Preliminary Description Figure 1. Application Example NEC's Universal PCI Series gate array family provides designers with the flexibility and performance required to

D17709

Abstract: SE-17709
Contextual Info: User’s Manual SE-17709 System Evaluation Board Target Devices µPD17704A µPD17705A µPD17707A µPD17708A µPD17709A µPD17717 µPD17718 µPD17719 Document No. U10663EJ4V0UM00 4th edition Date Published September 2001 N CP(K) Printed in Japan 1995, 2001

MF-1134

Abstract: SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL gas detector NDL5405 NDL5405C NDL5430C NDL5430CR NDL5471RC NDL5490 NDL5490L
Contextual Info: PRELIMINARY DATA SHEET PHOTO DIODE NDL5430C Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS for 10 Gb/s f30 mm InGaAs PIN PHOTO DIODE DESCRIPTION NDL5430C Series are InGaAs PIN photo diodes for 10 Gb/s long wavelength transmission systems. It covers

detector apd nec

Abstract: NDL5405L NDL5490 NDL5490L NDL5500 NDL5510 NDL5520C NDL5530 NDL5530C NDL5531
Contextual Info: DATA SHEET _ PHOTO DIODE NDL5530C 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS <¿30 jum InGaAs AVALANCHE PHOTO DIODE DESCRIPTION NDL5530C is an InGaAs avalanche photo diode especially designed for a detector of long wavelength optical fiber

NNCD6.8G

Abstract: NNCD3.9G NNCD5.6G IEC1000 IEC1000-42 IEC1000-4-2 NNCD27G C10535E C11531E D1164
Contextual Info: DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD3.3G to NNCD7.5G, NNCD27G ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES QUARTO TYPE : COMMON ANODE 5 PIN MINI MOLD PACKAGE DIMENSIONS This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on

induction cooker fault finding diagrams

Abstract: induction cooker schematic diagram EDS SHIELD DOMESTIC GAS DETECTOR schematic diagram induction cooker 3 gun sound generator UM 3562 NEC plasma tv schematic diagram ultrasonic flaw detector LS 2027 Final Audio LS 2027 audio Ultrasonic humidifier circuit
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SJ460

Abstract: MEI-1202
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

d1072

Abstract: 2SK2541 MEI-1202 MF-1134
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2541 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWINGS in millimeter The 2SK2541 is a switching device which can be driven directly by a 1.5 V power source. The M O S FET has excellent switching characteristics and is suitable

2SK2541

Abstract: MEI-1202 MF-1134 NEC reliability 1995
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2541 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

d1072

Abstract: 2SJ460 MEI-1202
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ460 is a switching device which can be driven directly by a 2.5 V power source. PACKAGE DRAWINGS in millimeter The MOS FET has excellent switching characteristics and is suitable

nec laser diode OTDR

Abstract: C10535E MEI-1202 NDL7581P NDL7581PC NDL7581PD
Contextual Info: DATA SHEET LASER DIODE NDL7581P InGaAsP STRAINED DC PBH PULSED LASER DIODE MODULE 1650 nm OTDR APPLICATION DESCRIPTION NDL7581P is a 1650 nm newly developed Strained Multiple Quantum Well St-MQW structure pulsed laser diode DIP module with singlemode fiber and internal thermoelectric cooler. It is designed for light sources of optical