NEC MARKING BX Search Results

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD444010L-X 4M-BIT CMOS STATIC RAM 512K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444010L-X is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM. The µPD444010L-X has two chip enable pins (/CE1, CE2) to extend the capacity.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD442012L-X 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442012L-X is a high speed, low power, 2,097,152 bits 131,072 words by 16 bits CMOS static RAM. The µPD442012L-X has two chip enable pins (/CE1, CE2) to extend the capacity.

USB6B1

Contextual Info: n il SGS-THOMSON “ 7# « æ m iC T fô M e s Application Specific Discretes A.S.D. U S B 6 BX USB PORT PROTECTION PRELIMINARY DATASHEET FEATURES • Full diode bridge with integratedclamping protection ■ Breakdown voltage : Vbr = 6V min. ■ Peakpulse powerdisspation : Ppp= 500W 8/2Qis

TC7988

Abstract: 2SK2158 MARKING J1A transistor WT7 J Fet marking 2 AW marking N00 3250Q
Contextual Info: M O STféïl-f^ jÎJiP: h 37 > v J X ^ M O S Field Effect Transistor r ^ j_ C I E • •fc I ÌK N 2 S K 2 1 5 8 MOS FET r ü iH X -f y 2 S K 2 1 5 8 I Î1.5 V l E l i £ -f U , fÉ ÎŒ T ig B T 't , ÿ 9 Æ3 * J U i ^ M O S F E T T 5* A 'O K -7 - f 'V y

D431000A

Abstract: d431000 PD431000A upd431000a
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431000A 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT Description The µPD431000A is a high speed, low power, and 1,048,576 bits 131,072 words by 8 bits CMOS static RAM. The µPD431000A has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available. In

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT _ ¿¿PD442012L-X 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD442012L-X is a high speed, low power, 2,097,152 bits 131,072 words by 16 bits CMOS static RAM. The ^¡PD442012L-X has two chip enable pins (/CE1, CE2) to extend the capacity.

Contextual Info: DATA S H EE T_ MOS INTEGRATED CIRCUIT _ ¿¿PD442000L-X 2M-BIT CMOS STATIC RAM 256K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ^¡PD442000L-X is a high speed, low power, 2,097,152 bits 262,144 words by 8 bits CMOS static RAM.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT _¿¿PD444012L-X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD444012L-X is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM.

d44401

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT _ ¿ ¿ P D 4 4 4 0 1 0 L - X 4M-BIT CMOS STATIC RAM 512K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD444010L-X is a high speed, low power, 4,194,304 bits 524,288 words by 8 bits CMOS static RAM.

uPD444012LGY-B70X-MJH

Abstract: uPD444012LGY-B70X uPD444012
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD444012L-X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444012L-X is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. The µPD444012L-X has two chip enable pins (/CE1, CE2) to extend the capacity.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD442012L-X 2M-BIT CMOS STATIC RAM 128K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD442012L-X is a high speed, low power, 2,097,152 bits 131,072 words by 16 bits CMOS static RAM. The µPD442012L-X has two chip enable pins (/CE1, CE2) to extend the capacity.

NEC marking BX

Abstract: uPD444012AGY-B55X-MJH
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD444012A-X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444012A-X is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. The µPD444012A-X has two chip enable pins (/CE1, CE2) to extend the capacity.

PD448012-X

Abstract: Cxxx uPD448012-X NEC marking BX
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD448012-X 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The μPD448012-X is a high speed, low power, 8,388,608 bits 524,288 words by 16 bits CMOS static RAM. The μPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD444012A-X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The μPD444012A-X is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. The μPD444012A-X has two chip enable pins (/CE1, CE2) to extend the capacity.

uPD444012AGY-B70X-MJH-A

Abstract: UPD444012AGY-B55X-MJH-A
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD444012A-X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444012A-X is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. The µPD444012A-X has two chip enable pins (/CE1, CE2) to extend the capacity.

PD448012-X

Abstract: 12X18 PD448012
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD448012-X 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD448012-X is a high speed, low power, 8,388,608 bits 524,288 words by 16 bits CMOS static RAM. The µPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity.

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _/j P D 4 4 1 0 0 0 L - X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD441000L-X is a high speed, low power, 1,048,576 bits 131,072 words by 8 bits CMOSstatic RAM.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT _ ¿ ¿ P D 4 4 2 0 0 0 L - X 2M-BIT CMOS STATIC RAM 256K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD442000L-X is a high speed, low power, 2,097,152 bits 262,144 words by 8 bits CMOS static RAM.

Marking m.1

Abstract: l 0534 Transistor L83
Contextual Info: NEC Compound Transistor I ï f / \ f 7 4# G A 1A 3Q $ R i = 1.0 kQ, R2= 10 k Q O — W V R, OGN1A3Q t 3 > 7° U / > 9 U T"ë £ i~t ÒE (T a = 25 °C ) m H& s fô 5e ¥ fie X faJS Æ V CBO 60 V a u ? ÿ - x . i - y ? ? i\ W l± VcEO 50 V • ■ / 9 • ^ —kTHWï.

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ iuPD441000L-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD441000L-X is a high speed, low power, 1,048,576 bits 131,072 words by 8 bits CMOS static RAM.

a70 8 pin ic

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / juPD42S16405L, 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE EDO D e s c rip tio n The jiPD42S16405L, 4216406L are 4,194,304wocds by 4 bits CMOS dynamic HAM w ith option«! hyperpage mode

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD441000L-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The µPD441000L-X is a high speed, low power, 1,048,576 bits 131,072 words by 8 bits CMOS static RAM. The µPD441000L-X has two chip enable pins (/CE1, CE2) to extend the capacity.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD444012A-X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444012A-X is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. The µPD444012A-X has two chip enable pins (/CE1, CE2) to extend the capacity.

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ iuPD441000L-X 1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The ,uPD441000L-X is a high speed, low power, 1,048,576 bits 131,072 words by 8 bits CMOS static RAM.