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    NEC INVISIBLE LASER RADIATION Search Results

    NEC INVISIBLE LASER RADIATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS298/BEA
    		Rochester Electronics LLC 54LS298 - DATA SEL/MULTIPLEXER, QUAD 2-INPUT, WITH STORAGE - Dual marked (M38510/30909BEA) PDF Buy
    54S153/BEA
    		Rochester Electronics LLC 54S153 - DATA SEL/MULTIPLEXER, DUAL 4-INPUT - Dual marked (M38510/07902BEA) PDF Buy
    54F251A/BEA
    		Rochester Electronics LLC 54F251 - DATA SEL/MULTIPLEXER, 8-INPUT, WITH 3-STATE OUTPUTS - Dual marked (M38510/33905BEA) PDF Buy
    54LS298/BFA
    		Rochester Electronics LLC 54LS298 - DATA SEL/MULTIPLEXER, QUAD 2-INPUT, WITH STORAGE - Dual marked (M38510/30909BFA) PDF Buy
    54LS258B/BEA
    		Rochester Electronics LLC 54LS258 - DATA SEL/MULTIPLEXER, QUAD 2-INPUT, WITH 3-STATE OUTPUTS, WITH ENABLE - Dual marked (M38510/30907BEA) PDF Buy

    NEC INVISIBLE LASER RADIATION Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    bfy 40

    Abstract: STM-16 STM-64 10 gb laser diode NR8501BP NEC SEMICONDUCTOR CATALOG microwave product catalog
    Contextual Info: OPTICAL SEMICONDUCTOR DEVICES FOR FIBEROPTIC COMMUNICATIONS SELECTION GUIDE May 2001 SAFETY INFORMATION ON THIS PRODUCT NEC Corporation DANGER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT


    Original     		P12480EJNV0SG00 bfy 40 STM-16 STM-64 10 gb laser diode NR8501BP NEC SEMICONDUCTOR CATALOG microwave product catalog PDF

    nec laser diode OTDR

    Abstract: NEC DIODE LASER PX10160E nec laser diode
    Contextual Info: DATA SHEET LASER DIODE NX7639BB-AA 1 625 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION DESCRIPTION The NX7639BB-AA is a 1 625 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode coaxial module with single mode fiber.


    Original     		NX7639BB-AA NX7639BB-AA nec laser diode OTDR NEC DIODE LASER PX10160E nec laser diode PDF

    PX10160E

    Abstract: NEC diode NEC DIODE LASER nec laser diode OTDR NX7637BF PL10794EJ01V0DS nec 1252
    Contextual Info: DATA SHEET LASER DIODE NX7637BF-AA 1 625 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION DESCRIPTION The NX7637BF-AA is a 1 625 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode coaxial module with single mode fiber.


    Original     		NX7637BF-AA NX7637BF-AA PX10160E NEC diode NEC DIODE LASER nec laser diode OTDR NX7637BF PL10794EJ01V0DS nec 1252 PDF

    PX10160E

    Abstract: NEC invisible laser radiation NEC DIODE LASER PL10700EJ01V0DS
    Contextual Info: DATA SHEET LASER DIODE NX5530SA 1 550 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS DESCRIPTION The NX5530SA is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode. This device is specified to operate under pulsed condition and designed for light source of Optical Time Domain


    Original     		NX5530SA NX5530SA PX10160E NEC invisible laser radiation NEC DIODE LASER PL10700EJ01V0DS PDF

    NX5330SA

    Abstract: PX10160E
    Contextual Info: DATA SHEET LASER DIODE NX5330SA 1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS DESCRIPTION The NX5330SA is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode. This device is specified to operate under pulsed condition and designed for light source of Optical Time Domain


    Original     		NX5330SA NX5330SA PX10160E PDF

    NX5322

    Contextual Info: LASER DIODE NX5322 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5322 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.


    Original     		NX5322 PL10740EJ01V0DS PDF

    STM-16

    Abstract: PX10160E
    Contextual Info: DATA SHEET LASER DIODE NX8315XC 1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION The NX8315XC is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package


    Original     		NX8315XC NX8315XC STM-16 OC-48 STM-16 PX10160E PDF

    monitor nec

    Abstract: PX10160E
    Contextual Info: DATA SHEET LASER DIODE NX6308GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6308GH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION


    Original     		NX6308GH NX6308GH monitor nec PX10160E PDF

    FTTH

    Abstract: NX6410GH PX10160E A1490
    Contextual Info: DATA SHEET LASER DIODE NX6410GH 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6410GH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION


    Original     		NX6410GH NX6410GH FTTH PX10160E A1490 PDF

    PX10160E

    Abstract: STM-16 NX8316XC
    Contextual Info: DATA SHEET LASER DIODE NX8316XC 1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION The NX8316XC is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package


    Original     		NX8316XC NX8316XC STM-16 OC-48 PX10160E STM-16 PDF

    PX10160E

    Contextual Info: DATA SHEET LASER DIODE NX6309GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6309GH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION


    Original     		NX6309GH NX6309GH PX10160E PDF

    PX10160E

    Abstract: A1490
    Contextual Info: DATA SHEET LASER DIODE NX6411GH 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6411GH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION


    Original     		NX6411GH NX6411GH PX10160E A1490 PDF

    Contextual Info: DATA SHEET LASER DIODE NX6308GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6308GH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION


    Original     		NX6308GH NX6308GH PDF

    Contextual Info: DATA SHEET LASER DIODE NX6411GH 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6411GH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION


    Original     		NX6411GH NX6411GH PDF

    Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6410GH 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6410GH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.


    Original     		NX6410GH NX6410GH PDF

    A1276

    Abstract: NX5315 NX5315EH NX5315EK PX10160E laser gpon
    Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX5315 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These


    Original     		NX5315 A1276 NX5315EH NX5315EK PX10160E laser gpon PDF

    NX6406

    Abstract: NX6406GH NX6406GK PX10160E
    Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6406 Series 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR FTTH PON APPLICATION DESCRIPTION The NX6406 Series is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD.


    Original     		NX6406 NX6406GH NX6406GK PX10160E PDF

    Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6411GH 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6411GH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.


    Original     		NX6411GH NX6411GH PDF

    NX6410GH

    Abstract: PX10160E NEC DIODE LASER
    Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6410GH 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6410GH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.


    Original     		NX6410GH NX6410GH PX10160E NEC DIODE LASER PDF

    Contextual Info: DATA SHEET LASER DIODE NX6309GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6309GH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION


    Original     		NX6309GH NX6309GH PDF

    NEC DIODE LASER

    Contextual Info: DATA SHEET LASER DIODE NX8346TS 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8346TS is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package


    Original     		NX8346TS NX8346TS NEC DIODE LASER PDF

    Contextual Info: DATA SHEET LASER DIODE NX5322 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5322 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.


    Original     		NX5322 PDF

    NX5317EH

    Contextual Info: DATA SHEET LASER DIODE NX5317EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5317EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode. These devices are designed for application up to 1.25 Gb/s.


    Original     		NX5317EH NX5317EH PDF

    PX10160E

    Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6309GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6309GH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.


    Original     		NX6309GH NX6309GH PX10160E PDF