NEC HF 324 Search Results

2SC2785

Abstract: transistor IR 324 C to 220 2SA1175 2sc2785 ef VCE-60
Contextual Info: NEC D ES C R IP TIO N NPN SILICON TRANSISTOR 2SC2785 The 2SC 2785 is designed for use in driver stage of A F amplifier and PACKAG E D IM E N S IO N S low speed switching. in millimeters inches FEATURES • High Voltage 4 .2 M A X . V c E O : 5 0 V M IN .

2SB963

Abstract: 2SD1286 T108 T460 TS33 CC OWV W ST
Contextual Info: NEC j m = f = f iS r f K D arlington T ra n s is to r _ 2SD1286 A NPN =l> NPN Silicon Epitaxial Darlington Transistor Audio Frequency Power Amplifier, Low Speed Switching ftM M -' ! y b > 7 > if x ? t , U nit: mm 'j u —, v w / -i k, 7 y y° n c c o & t i y 7 4 rtò m ià iz M & T to

TYA 0298

Abstract: PD17015 91IJ regulator KL SN 102 lcd SKE 1G DISPLAY 7NY PC10 uPD17015 757P 75tti
Contextual Info: 1— S • 5/ “ h Y N E C Mosmm\B\s& M O S In te g ra te d C ircu it ^ / ¿ P D 1 7 1 5 4 t ' - y h ' » ' <? \s?~ "s~7 • •7^T^nzi > h n - 7 juPD17015[i, 220MHz i T'SilfFT %~f') 7.^ —7 , PLL > > ir +f- -f +f, f c it/L C D =l> h n - ? / 1 7=^ ÿ ÿ ; i / • f a - - > ^ ' f f l Î Ê a : / ± 4 kf-y h •

R096

Abstract: FN1L4Z
Contextual Info: . SEC r i Ï T 7 / \ f -y-57 • 5 / - H A C om pound Transistor FN 1L4Z i&ifc 1*1I t P N p n : 4# > 'J=l> Hwm it o/< 4 - to 2 .8 ± 0 .2 Ri =47 kQ O FA 1 L4 Z t 1.5 ? > 7 ° ') / > ? ') T l f f f l T ' ë 0.65*0 1 ~ t„ ( T a = 25 °C ) m »&

FCK 111

Abstract: SS5100 la 5531 TRANSISTOR BO 346 T108 T46C T-10803 SKs 22 TRANSISTOR marking EP
Contextual Info: - y - ^ NEC M Com pound Transistor i ï r / v f x & GA1 F4N ^ - f ì & • m m o s < J T X 1& t j i $ : f t M L X ^ t i ' c (R i = 22 k£2, R2 = 47 kQ) c o G N 1 F 4 N t 3 > 7 ° IJ y > 9 'J X i t m T è & 1~c ( T a = 25 °C ) II Marking fê

TC-6252

Abstract: TC6252 WJ M64
Contextual Info: - r S • — h * SEC i ï r / V C om po un d Transistor Î 7 GN1F4Z ^ 4f J i ^ I U O y< yf 7 l*3 Ü X Î É tf l £ R i = 2 2 L X ^ Î 1 ( - P - Ì Ì ! m m k Q ) B O O o G A 1F 4 Z 3 t > - 7° U / 9 > 'J T l È f f l T ' ë ì e t ( T a — 25 °C) m

6008A

Abstract: B0952 nec 1251 T108 H052
Contextual Info: Com pound T r a n s is t o r FN1A4P * £ Î/ lF * 3 1 P N P I t & • = !> V = 7 > i > ^ m ^ - f ï • mm) 0 ' < j T ?,}& }?[£ fàiië 1 1 È 1 0 ( R, = 10 kQ, R 2= 47 kQ) 2 .8 ± 0 .2 0 .6 5 Î";!: 1.5 O F A 1 A 4 P t =J > v ” IJ / > ? u Tê t t G

transistor AFR 16

Abstract: BAIL4M transistor afr 22 bn1l4m ba1l4m T108
Contextual Info: I ¿Y I fK NEC m ïâ-ê- h ^ > > x 9 Compound Transistor iír / v - r z B A I L 4M í£ í / t Ñ 1 N P N X fcf f l r i s T J U 9 4t $ o £ W T H 1 ¥ - Í í L • m m ★ x f f i t Í L £ 1*1 j t L T V ' á t o ( R j = 4 7 kQ , R 2 = 4 7 k f í ) ÖE

lt460

Abstract: PA33 T108 T460 TC6167 S0245 ti082
Contextual Info: z>—S7•2/—h~ SEC Compound Transistor Ì ? T / \ fX « AA1 L4Z ít 0/< 4 7 X íÉ # í£ l* IJ lL T ^ á ;1 - c Ri = 47 kQ o A N 1 L 4 Z ¿ 3 > 7 °'J / U - T fë fflT - ë á f < t t à Î f t ^ Æ # (T a = 25 °C) n s xPhIUŒ H& ^ # ÍtL fê /E. 9 9 '

1S955

Abstract: 2SA1608 T108
Contextual Info: NEC j m*=ri\rx A S ilic o n T r a n s is to r _ 2 S A 1 6 8 f2 '>M 3 > PNP i & m ; % 4 I M i s «£ " s ? -> < fm P N P Silicon Epitaxial T ra n sisto r Audio Freq uency A m plifier and S w itching 4# it : mm

transistor DK RN

Abstract: 7 HL 05 PA33
Contextual Info: *PWS10 ms , , Du t y C y c l e ^50 % OJ t\3 A 1 U V H /// Vr V? si >j c_ m O O CD CO o m 5 o m o cn o xi > H O c/ o J> End ji­ co CD CO ¡2 T > C-. « > J3 o o AR1A3M •X tì« I H I w SO >1 m 4 ani* ctcr o 3 Fc. M . a - 3 3 pì+ jì Pi £+ a- Í r\

nec 2501 LD 932

Abstract: nec 2501 LD 229 NEC 2501 LE 240 transistor c 839 nec 2501 LD
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR juPA804T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD The 2SC4571 has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r U HF. PACKAGE DRAW INGS (U n it: m m) FEATURES 2.1 ± 0.1

i031

Abstract: TC-6096 CE1F3P T108 T460 Scans-008809 transistor 115 25e S082
Contextual Info: NEC À iïf /ü t z C o m p o u n d T ran sis to r A CE1F3P f â i i r t S c N p n 1 1 ' ^ 4 1- > 7 v u M~> ' a > + jS J C E l F S P l i f S i i ï X - i è L t n w ? ^ - x ; 7 ? P.l C 7 > ÿjr — K , 3 i / ^ H ig h • ^ — xPhIi-i/eISH : 9 4 h F E Î Ê Î Æ l^ jl h

ic ntp- 3000

Abstract: IIH13 Scans-0088096
Contextual Info: z r— S 7 • 5^— h Com pound Transistor C E2A 3Q í&í¡fcF*3J & N P N x C E2A 3Q • i' t — ¿ Í S I i» ^ Y iP ^ M L tz , ^ H ig h 9 f- i i - n ^ M '> l □ ^ Vs? > '> * ? h F E ÎS ÎÆ R Â h 7 's ^ w 'J X 9 X % ? - r O A i K 7 i y ’m t l - C f t i l T t o

uPD4265160

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4264160, 4265160 64 M-BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, FAST PAGE MODE D escrip tio n The /iPD4264160,4265160 are 4,194,304 words by 16 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /iPD42S17405L, 4217405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE EDO Description The /iPD42S17405L, 4217405L are 4,194,304 words by 4 bits CMOS dynamic RAMs with optional hyper page mode (EDO).

2SA1546

Contextual Info: SEC S ilico n T ra n s is to r 2SA1546 P N P t 0^ X + 7 y ^ '> i; Z l > C R T fc fT ^ a i PN P Epitaxial Silicon T ra n sisto r Video Out fo r a High-Resolution C R T U n it: mm § t"“ fz 46, O iHif-pT', ^ ;£ ~f~„ fT = 300 MHz T Y P . @ V CE= — 30 V, I E = 30 mA

2SA992 equivalent transistor

Abstract: 2SC1845 equivalent 2SA992 2SA992 equivalent 2sc 5060 2SC1845 PA33 transistor 2SC1845
Contextual Info: /VEC 1 ? '> i > h ^ > x ^ 2SA992 P # z S ilico n T r a n s is to r / \ 'T 7 t y N P x b ° ^ 4 i '> 7 V U f l2 '> «; 3 > h ^ ^ W-MM i t 0 [§ i| & f f iX f U ^ i7 3 > i I- u — i \ , y y v “i;x f iW if c if f l, t O iItjÉ 'I'S :, L ' 7 — T ‘ M i/'. : m m )

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT / iP D 42S 17405L , 4217405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, EDO Description The ¿¡PD42S17405L, 4217405L are 4,194,304 words by 4 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.

ITE 8511

Abstract: MT 6235 3e tRANSISTOR transistor 3E ISK092 T108 transistor A4p 54 A04g la 5531
Contextual Info: C o m p o u n d T r a n s is to r GA1A4P ftwm mt : mm # m. 2 . 1 + 0. 1 ( R i = 10 f â , R 2= 4 7 kû) 1.25 ±0.1 )C 3 _ oG t rj N 1A 4P > 7° >J 9 y 9 >) T f ë f B T ë î t c (T a = m • a u ^ 'X ; ~ -y 9 i Hg. X fa H E E •;9Wi‘m±. ■ ^ V 9 9 % !ëÊ ( Ï Ë

120m tdk

Abstract: 78P312 D78P312A pd78312 PA-78P312GF IEM-5086 uPD78P312 uPD78P312A uPD78P312AGQ-36 uPD78P312AL
Contextual Info: — S • S '— h mmmfà NEC m os M O S Integrated Circuit P D 7 8 P312A m ^ f n r l S c f A I 6 / 8 £ ' y V • ' > > & J U ? - 7 7 ° - - ^ > T ^ □ =1 > fc° z l — ^ ,«PD78P312A ü , ,uPD78312A<7 |*]/I-^X 7 ROM £ >7 > • M A PROM £ fciiE P R O M f c ë

PC7924AHF

Abstract: PC7912AHF PC7915AHF PC7918AHF pt 5069
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

NEC 1093

Abstract: isp macro lib D17010
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿ ÍP D 1 7 0 1 0 4-BIT SINGLE-CHIP MICROCONTROLLER WITH HARDWARE DEDICATED TO DIGITAL TUNING SYSTEM The ¿¡PD17010 is a 4 -b it sin g le -c h ip C M O S m ic ro c o n tro lle r c o n ta in in g hardw are fo r d ig ita l tuning system s.

AF9706

Abstract: AF-9706 AF 9704
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社