NEC D 882 P Search Results

transistor NEC D 882 p

Abstract: transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 9 GHz TYP. • Low Noise, High Gain •

2SC5012-T1

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •

Contextual Info: SEC pPB100474 1,024, X 4-Bit 100K ECL RAM NEC Electronics Inc. Description Pin Configurations NEC’s /JPB100474 is a very high-speed 100K interface ECL RAM organized as 1,024 words by 4 bits and designed with open-emitter, noninverted outputs. It is available in a 24-pin cerdip, 24-pin ceramic LCC, or

Nec K 872

Abstract: 2SD887 2sc1162 2SD883 2sc2335 2SD877 2SD756 2sd756 e 2sc3114 2SC3247
Contextual Info: - s € tt « Manuf. T y p e No. H Ä SANYO S T O SHIBA S m NEC ÍI HITACHI S ± iS FUJITSU fâ T MATSUS H I T A 2 S D 860 ✓' ta T 2SC25S2 2SD 860A te T 2SC2552 2SD 860B fâ T 2SC2552 2SD 861 «- te T 2SC2552 2SC3169 2SD 861A te T 2SC2552 2SC3169 2SD 861B

up43256

Abstract: upd43256bb IC-8184C
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT _ ¿¿PP43256B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The /¿PD43256B is a high speed, low power, and 262,144 bits 32,768 words by 8 bits CMOS static RAM. Battery backup is available (L, LL, A, and B versions). And A and B versions are wide voltage operations.

nec d 882 p

Abstract: NEC 882 p nec en2
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD16833 MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT D E S C R IP T IO N The /¿PD16833 is a m onolithic quad H bridge driver IC which uses N-channel pow er MOS FETs in its driver stage. By using the MOS FETs in the output stage, this driver IC has a substantially im proved saturation voltage and power

H117

Abstract: Ho118 IC-8932 H119 nec d 882 p
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT u P D 1 6 4 4 7 120-OUTPUT TFT LCD SOURCE DRIVER NAVIGATION, AUTOMOBILE LCD-TV DESCRIPTION The /¿PD16447 is a TFT liquid crystal panel source driver. It consists of a m ultiplexer circuit that supports various pixel arrangements, a shift register generating sampling timing, and two sample and hold circuits that

Contextual Info: DATA SHEET_ NEC MOS INTEGRATED CIRCUIT JU PD 1 6 3 0 6 B 64-BIT HIGH-VOLTAGE CMOS DRIVER The /¿PD16306B is a high voltage CMOS driver for flat display panels such as PDP, VFD and EL. It consists of a 64-bit bidirectional shift register, a 64-bit latch, and a high-voltage CMOS driver. The logic circuit operates on 5 V

d78054

Abstract: connecting diagram for ic 14004
Contextual Info: P R E L IM IN A R Y P R O D U C T IN F O R M A T IO N NEC M O S INTEGRATED CIRCUIT 8-BIT SINGLE-CHIP MICROCOMPUTER DESCRIPTION The /iPD78P054Y is a product in which the on-chip mask ROM of the ¿iPD78054Y is replaced by one-time PROM which can be written to once only, or by EPROM which can be programmed, erased, and reprogrammed.

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product • Low Noise, High Gain • Low Voltage Operation

transistor NEC D 882 p

Abstract: 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTO R 4 PINS SU PER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters fT = 6.5 G H zT Y P . • Low Noise, High Gain

JJL36250

Abstract: JLL36250 E62806 500kcmil
Contextual Info: Product Data Sheet 145X552 Replace “X” with 1, 2 or 3 for number of poles Power Distribution Block 380 Amps, 600 Volts AC/DC See tables below for SCCR wire ranges, flexible stranded and multiple wire approvals. Wire Range: Line side: (1) 500kcmil - #4 AWG

E62806

Abstract: JJL36250 JLL36250
Contextual Info: Product Data Sheet 145X579 Replace “X” with 1, 2 or 3 for number of poles Power Distribution Block 380 Amps, 600 Volts AC/DC Wire Range: Line side: (1) 500 kcmil - #4 AWG Load Side: (6) 2/0 - #14 AWG See tables below for SCCR wire ranges, flexible stranded and multiple wire approvals

transistor NEC D 882 p

Abstract: transistor NEC D 882 p circuit diagram nec d 882 p transistor IC-3171 transistor NEC 882 p transistor NEC D 882 transistor NEC b 882 p nec d 882 p transistor transistor transistor NEC b 882 p equivalent UPC7812A
Contextual Info: AdLib OCR Evaluation BIPOLAR ANALOG INTEGRATED CIRCUITS uPC7800A SERIES THREE TERMINAL POSITIVE VOLTAGE REGULATORS DESCRIPTION pPC780OAseries are monolithicthree term ina I positive regulI atorswhich employ intern a I lycurrent I imiting, thermal shut down, output transistor safe operating area protection make them essentially indestructible .

A1s smd TRANSISTOR

Abstract: smd code marking NEC 817 smd code marking NEC g polygon motor IC-8030B ic803 smd TRANSISTOR code marking PR smd diode marking code T03 smd code marking NEC nec k 813
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD78P238 8 BIT SINGLE-CHIP MICROCOMPUTER The //PD78P238 is an 8-bit single-chip microcomputer produced by replacing the mask ROM in the/iPD78238 with one-time PROM or EPROM. Since a user program can be written on the one-time PROM or EPROM, this

transistor NEC D 882 p circuit diagram

Abstract: transistor NEC b 882 p transistor NEC D 882 p
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT fxPC24M00A Series THREE TERMINAL LOW DROPOUT VOLTAGE REGULATOR DESCRIPTION ¿¡PC24M00A Series are low dropout regulators w hich have 500 mA capable for output current. These ICs are built-in the saturation protection circuit of the output transistor.

63000-000

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device

CT 1975 sam

Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the

Contextual Info: DATA SHEET N E C ^ r MOS INTEGRATED CIRCUIT jt iP D 4 7 0 1 A INCREMENTAL ENCODER COUNTER DESCRIPTION The //PD4701A is a coun ter fo r an X, Y 2-axis increm ental encoder. When a tw o-phase encoder signal is Input fo r th e X and Y axes, dire ctio n d iscrim ina tio n and com pu tatio n is perform ed, and c o u n t data is o u tp u t in 8 -b it parallel

21134 015

Abstract: nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051
Contextual Info: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OlPs = 22 dBm V67 , OlPs = 23 dBm (V68) typ. at f = 2 GHz

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD78F0233 8-BIT SINGLE-CHIP MICROCONTROLLER The ¿¡PD78F0233 is a mem ber of the ¿¡PD780232 Subseries that belongs to the 78K/0 Series. It replaces the internal R OM Note of the ¿¡PD780232 with a flash memory.

transistor NEC D 882 p 6V

Abstract: transistor NEC D 882 p IC-3170 transistor NEC D 882 p circuit diagram nec d 882 p transistor IC-8083 APC78MO5AHF MP-45G nec d 882 p transistor transistor transistor NEC b 882 p
Contextual Info: AdLib OCR Evaluation BIPOLAR ANALOG INTEGRATED CIRCUITS yPC78M00A SERIES THREE TERMINAL POSITIVE VOLTAGE REGULATORS DESCRIPTION pPC78MOOA series are monolithic three terminal positive regulators which employ internally current Iimiting, thermal shutdown, output transistor safe operating area protection makethem essentially indestructible .

transistor 2sc 1586

Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range

TRANSISTOR J 5804 NPN

Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.