NEC D 809 L Search Results

uc2801

Abstract: pc2801 PH302 MPD6122G-XXX PH302B upc2801 SE303A-C SE313 mpd6122 NEC D 809 F
Contextual Info: DATA S H E E T SEC BIPOLAR ANALOG INTEGRATED CIRCU ITS E L E C T R O N DE VI C E u P C 2 8 A , u P C 2 8 1 IN FR A RED R EM O TE CO N TR O L P R E A M P L IF IE R S The /iPC2800A and fxPC2801 A are bipolar analog ICs specifically developed for use in infrared remote control

EPBAD45

Abstract: ul508a EPBCD45 feeder UL508 EPBAD42 EPBCD42
Contextual Info: IEC Enclosed Listed Power Distribution Blocks Features and Approvals: 1 UL Listed UL1953 2 Flexible Stranded Wire Approval 3 High Short Circuit Current Rating UL508A 4 Integral dovetail features for multi-line stackup 5 Meets Feeder spacing requirements of UL508A

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product • Low Noise, High Gain • Low Voltage Operation

transistor NEC D 882 p

Abstract: 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTO R 4 PINS SU PER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters fT = 6.5 G H zT Y P . • Low Noise, High Gain

613 GB 123 CT

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD The /xPA812T has built-in 2 low-voltage transistors which are designed to PACKAGE D R A W IN G S

d768 transistor

Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
Contextual Info: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent

DMD43301

Abstract: NL10276BC30-17 SM02
Contextual Info: DMD43301 Specifications and Applications Information 10/17/06 Four Lamp DC to AC Inverter Preliminary The ERG DMD43301 DMD Series DC to AC inverter DMD Series features onboard connectors and can be easily dimmed using the onboard PWM Dimming or an external PWM

21134 015

Abstract: nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051
Contextual Info: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OlPs = 22 dBm V67 , OlPs = 23 dBm (V68) typ. at f = 2 GHz

NE32584C-T1

Abstract: nec 3435 transistor am 4428
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.

NL10276BC30-18

Abstract: DMD43584F SM02
Contextual Info: DMD43584F Specifications and Applications Information 07/02/07 Four Lamp DC to AC Inverter Preliminary The ERG DMD43584F DMD Series DC to AC inverter DMD Series features onboard connectors and can be easily dimmed using the onboard PWM Dimming or an external PWM

NL10276BC30-17

Contextual Info: DMD43471 Specifications and Applications Information Four Lamp DC to AC Inverter 01/19/11 Package Configuration 1.03 [26,2] MAX .809 [20,54] PCB components are shown for reference only. Actual product may differ from that shown. The ERG DMD43471 DMD Series DC to AC inverter

NL10276BC30-18

Abstract: NL10276BC30-17 IS NL12876BC26-25 DMD43471 NL10276BC30-17 SM02
Contextual Info: DMD43471 Specifications and Applications Information 06/04/09 Four Lamp DC to AC Inverter Preliminary Package Configuration 1.03 [26,2] MAX .809 [20,54] PCB components are shown for reference only. Actual product may differ from that shown. The ERG DMD43471 DMD

IC SEM 2105

Abstract: 3771 nec
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low

928 606 402 00

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low

2SC 968 NPN Transistor

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from

NEC 424400

Abstract: D424400GS 424400-70 NEC 424400-70 424400 60 d424400 424400-60 424400 424400-70 nec uPD424400
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ,uPD42S4400, 424400 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿¡PD42S4400, 424400 are 1,048,576 w ords by 4 bits CMOS dynam ic RAMs. The fast page mode capability realize high speed access and low power consum ption.

NE850R5

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device

NE33284A

Abstract: NE33284A-SL NE33284AS
Contextual Info: SUPER LOW NOISE HJ FET NE33284A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 2 V, Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz <n • GATE LENGTH: 0.3 pm • GATE WIDTH: 280 pm

63000-000

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device

DMD42696

Abstract: NL12876BC26-21
Contextual Info: DMD42696 Specifications and Applications Information 05/01/04 Four Tube DC to AC Inverter Preliminary Package Configuration 1.03 [26,2] MAX .809[20,54] Output 2x 1 Powered by a regulated +12 Volt DC source, the DMD42696 is designed to power the backlight of the NEC

2sc5194-t1

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AM PURER NPN SILICON EPITAXIALTRANSISTOR P A C K AG E D R A W IN G S FEATU RES • Low Voltage O peration, Low Phase D istortion • Low Noise Unit: mm N F = 1.5 dB TYP. @ V ce = 3 V, Ic = 7 mA, f = 2 GHz

hp 502 cold transistor

Abstract: 1H4 tube pc-9801 iw 1688 NL128102AC31-01 3460G
Contextual Info: DOD-H-6024 l/3g NEC T F T Type C O L O R . No . L O O M O D U L E N L 1 2 S 1 0 2 A G 3 1 — O 1 5 1 c m C2 O 1 Type . S X G A A n a 1 o s . F u i 1 — c o 1 ox* First editiOQ DATA SHEET Al 1 information io this docunent are subject to change without prior notice.

MC-422000A36FK-70

Abstract: MC-422000A36F-70 422000A36 MC-422000A36B-70 MC422000A36FK70 MC-422000A36FK nec mc-422000a36fk-70 MC-422000A36BK-70
Contextual Info: NEC MOS INTEGRATED CIRCUIT MC-422000A32, 422000A36 SERIES 2 M-WORD BY 32-BIT, 2 M-WORD BY 36-BIT DYNAMIC RAM MODULE FAST PAGE MODE D escription The MC-422000A32 series is a 2 097 152 w ords by 32 bits dynam ic RAM m odule on which 16 pieces o f 4 M DRAM jiPD424400 are assembled.

SIT8103AC-13-33E-24.00000T

Contextual Info: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT _ I1PD42S1780QL, 42178QQL 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The jUPD42S17800L, 4217800L are 2,097,152 w ords by 8 bits CMOS dynamic RAMs. The fast page mode