NEC 35 TPU Search Results

LF356 equivalent

Abstract: PC356 c356 JFET Matched UPC356 LF356
Contextual Info: NEC NEC Electronics Inc. D e s c r ip t io n /¿ P C 356 J -F E T IN P U T O P E R A T IO N A L A M P L IF IE R P in C o n f ig u r a t io n The fiP C 35 6 is a J -F E T input operational amplifier with matched P-channel ion implanted J-F E T s. In addition to

RFT e 355 d

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT uPC8102T RF AMPLIFIER IC FOR 150 MHz TO 330 MHz PAGER SYSTEM DESCRIPTION /¿PC8102T is a silicon m onolisic integrated circuit designed as RF am plifier for 150 MHz to 330 MHz pager system. Due to 1 V supply voltage, this IC is suitable for low voltage pager system . The package is a 6 pin mini mold suitable

Contextual Info: * *C -.s, IPD42S4260 |aPD42S4260L 262.144x16 Bit Dynamic CMOS DRAM NEC NEC Electronics Inc. ! Preliminary Information October 1991 Description Pin Configuration The jiPD42S4260/L is a fast page dynamic RAM organized as a 262,244 words by 16 bits and designed

IRP 745

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / < P D 4 2 1 8 0 5 1 M-BIT DYNAMIC RAM 128K-WORD BY 8-BIT, HYPER PAGE MODE EDO Description The //PD 421805 is a 131,072 words by 8 bits CMOS dynamic RAM with optional hyper page mode (EDO).

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT «P D 421165 1 M-BIT DYNAMIC RAM 64K-W ORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/W RITE MODE d e sc r ip tio n The JUPD421165 is a 65,536 words by 16 bits CMOS dynamic RAM with optional hyper page mode (EDO). Hyper page mode (EDO) is a kind of the page mode and is useful for the read operation.

Contextual Info: NEC MOS INTEGRATED CIRCUIT MPD4216100, 4217100 16M -B IT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE DESCRIPTION The fiPD4216100, 4217100 are 16 777 216 words by 1 bit dynamic CMOS RAMs. They differ in refresh cycle execution. FEATURES • 16 777 216 words by 1 bit organization

22106

Abstract: MC-22106
Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT MC-22106 MCP MULTI-CHIP PACKAGE FLASH MEMORY AND SRAM 16M-BIT FLASH MEMORY AND 1M-BIT SRAM Description The MC-22106 is a MCP (Multi-Chip Package) of 16,777,216 bits (1,048,576 words by 16 bits) flash memory and

43256BCZ

Abstract: MPD43256BGU-85L NEC 28PIN DIP 7L Marking
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT _ /¿PD43256B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The /1PD43256B is a high speed, low power, and 262,144 bits 32,768 words by 8 bits CM OS static RAM. Battery backup is available (L, LL, A, and B versions). And A and B versions are w ide voltage operations.

UPD812

Abstract: IPC811 iPC812
Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS ¿ ¿ P C 8 1 1 9 T , ¿ ¿ P C 8 1 2 T GAIN CONTROL AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE DESCRIPTION /¿PC8119T and /¿PC8120T are silicon m onolithic integrated circuits designed as gain control am plifier. Due to 100

NEC 8701

Abstract: nec photocoupler PS8701
Contextual Info: DATA SHEET NEC PHOTOCOUPLER PS8701 HIGH NOISE REDUCTION HIGH-SPEED ANALOG OUTPUT TYPE 5-PIN SOP PHOTOCOUPLER DESCRIPTION T h e PS8701 is an o p tica lly co u p le d iso la to r con tain ing a G aA IA s LED on th e light em ittin g diode input side and a

MC-421000A8BA

Abstract: MC-421000A8BA-70 MC421000A8BA70
Contextual Info: DATA SHEET NEC / _ / MOS INTEGRATED CIRCUIT M C - 4 2 1 0 0 0 A 8 , 4 2 1 0 0 0 A 9 S E R IE S 1 M-WORD BY 8-BIT, 1 M-WORD BY 9-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-421000A8 is a 1 048 576 w o rd s b y 8 b its dyn am ic RAM m o d u le on w h ic h 2 pieces o f 4 M DRAM

UPD42S18160G5-70-7-JF

Abstract: UPD42S18160G5707JF uPD42S18160-50 UPD4216160G uPD42S18160G5-50-7JF UPD4216160G5-50 PD42S18160-60 UPD42S18160G5-60-7JF NEC 4216160 UPD4218160G5-80-7JF
Contextual Info: DATA SHEET / MOS INTEGRATED CIRCUIT / PD42S16160,4216160,42S18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE D e s c rip tio n The /xPD42S16160, 4216160, 42S18160, 4218160 are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The

Contextual Info: DATA SHEET ' MOS INTEGRATED CIRCUIT MC-422000A32, 422000A36 SERIES 2 M-WORD BY 32-BIT, 2 M-WORD BY 36-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The M C-422000A32 series is a 2 097 152 words by 32 bits dynamic RAM m odule on which 16 pieces of 4 M DRAM fiPD424400 are assembled.

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT MC-22104 MCP MULTI-CHIP PACKAGE FLASH MEMORY AND SRAM 16M-BIT FLASH MEMORY AND 1M-BIT SRAM Description The MC-22104 is a MCP (Multi-Chip Package) of 16,777,216 bits (2,097,152 words by 8 bits) flash memory and

NEC TTE

Contextual Info: DATA SHEET LASER DIODE NDL7670P 1 310 nm OPTICAL CATV/ANALOG APPLICATIONS InGaAsP MQW-DFB LASER DIODE MODULE DESCRIPTION NDL7670P is a 1 310 nm DFB D is trib u te d Feed-Back laser d io d e, th a t has a n e w ly d e v e lo p e d M u ltip le Q u a n tu m W e ll (M QW ) stru c tu re , B u tte rfly package m o d u le w ith o p tic a l is o la to r. It is e s p e cia lly desig ne d

d442000

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT _ j U P D 4 4 2 L - X 2M-BIT CMOS STATIC RAM 256K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION Description The /xPD442000L-X is a high speed, low power, 2,097,152 bits 262,144 w ords by 8 bits CMOS static RAM.

Contextual Info: NEC NEC Electronics Inc. JLIPD482444, 482445 4M Video RAM Preliminary Information_ Description The ¿/PD482444 fast-page and /UPD482445 hyper-page video RAMs have a random access p o rt and a serial read/write port. The serial read/write p o rt is connected

777T7

Contextual Info: NEC MOS INTEGRATED CIRCUIT / ¿P D 4 2 1 6 4 0 5 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE DESCRIPTION The /iPD4216405 is a 4 194 304 words by 4 bits dynamic CMOS RAM with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT _//PD43256B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The ¿¿PD43256B is a high speed, low power, and 262, 144 bits 32,768 words by 8 bits C M OS static RAM. Battery backup is available (L, LL, A, and B versions). And A and B versions are w ide voltage operations.

Contextual Info: DATA SHEET ^ I E C _¿¿PD43256B / M OS IN T E G R A T E D C IR C U IT 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The itPD43256B is a high speed, low power, and 262,144 bits 32,768 words by 8 bits CMOS static RAM. Battery backup is available (L, LL, A, and B versions). And A and B versions are wide voltage operations.

MC-421000A9BA-70

Abstract: MC-421000A9BA-80 MC421000A9BA70
Contextual Info: NEC MOS INTEGRATED CIRCUIT M C - 421000A 8, 421000A 9 S E R IE S 1 M-WORD BY 8-BIT, 1 M-WORD BY 9-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-421000A8 is a 1 048 576 w o rd s b y 8 b its dyn a m ic RAM m o d u le on w h ich 2 pieces o f 4 M DRAM

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD424400 4M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The ftP 0424400 is a 1 048 576 words by 4 bits dynamic CMOS RAM. The fast page mode capability realize high speed access and low power consumption.

MC-422000A36FJ-80

Contextual Info: DATA SHEET ' MOS INTEGRATED CIRCUIT MC-422000A32, 422000A36 SERIES 2 M-WORD BY 32-BIT, 2 M-WORD BY 36-BIT DYNAMIC RAM MODULE FAST PAGE MODE D escription The M C-422000A32 series is a 2 097 152 words by 32 bits dynamic RAM module on which 16 pieces of 4 M DRAM ¿iPD424400 are assembled.

42S4260

Abstract: 42S4260-70 NEC 42S4260-70
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT jUPD42S4260, 424260 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE The ^PD42S4260, 424260 are 262,144 words by 16 bits dynamic CMOS RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.